JPS556898A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS556898A
JPS556898A JP8491779A JP8491779A JPS556898A JP S556898 A JPS556898 A JP S556898A JP 8491779 A JP8491779 A JP 8491779A JP 8491779 A JP8491779 A JP 8491779A JP S556898 A JPS556898 A JP S556898A
Authority
JP
Japan
Prior art keywords
range
ranges
conductive type
longitudinal direction
lateral direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8491779A
Other languages
Japanese (ja)
Other versions
JPS562421B2 (en
Inventor
Masanori Nakai
Shintaro Ito
Seiya Tokumaru
Junichi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8491779A priority Critical patent/JPS556898A/en
Publication of JPS556898A publication Critical patent/JPS556898A/en
Publication of JPS562421B2 publication Critical patent/JPS562421B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To heighten the current amplification factors of both a Tt R in the lateral direction and a TR in the longitudinal direction, by simultaneously raising the emitter injection efficienty and base transportation efficiency of the TR in the lateral direction and the emitter injection efficiency and base transportation efficiency of the TR in the longitudinal direction. CONSTITUTION:The first and second P<+> conductive type ranges 13, 14 are formed into a N<-> conductive type epitaxial range 12 made up on a semiconductor substrate 11, and N<+> conductive type ramges 151, 152, the second P conductive type ranges 161, 162 and N<+> conductive type additional ranges 171, 172 are successively built up to the N<-> conductive type range 12 surrounded by the second P<+> conductive type range range 14 toward the inside from the surface. A transistor Q1 in the lateral direction is constituted using the range 13 as an emitter, the range 12 as a base and the range 14 and the ranges 161, 162 as collectors while a transistor Q2 in the longitudinal direction is formed empolying the ranges 171, 172 as emitters, the range 14 and the ranges 161, 162 as bases and the ranges 171, 172 as collectors.
JP8491779A 1979-07-06 1979-07-06 Semiconductor device Granted JPS556898A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8491779A JPS556898A (en) 1979-07-06 1979-07-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8491779A JPS556898A (en) 1979-07-06 1979-07-06 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12425074A Division JPS5513428B2 (en) 1974-10-30 1974-10-30

Publications (2)

Publication Number Publication Date
JPS556898A true JPS556898A (en) 1980-01-18
JPS562421B2 JPS562421B2 (en) 1981-01-20

Family

ID=13844061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8491779A Granted JPS556898A (en) 1979-07-06 1979-07-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS556898A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57127920U (en) * 1981-02-05 1982-08-10

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517885A (en) * 1974-07-09 1976-01-22 Tokyo Shibaura Electric Co

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS517885A (en) * 1974-07-09 1976-01-22 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS562421B2 (en) 1981-01-20

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