JPS5512708A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5512708A
JPS5512708A JP8406778A JP8406778A JPS5512708A JP S5512708 A JPS5512708 A JP S5512708A JP 8406778 A JP8406778 A JP 8406778A JP 8406778 A JP8406778 A JP 8406778A JP S5512708 A JPS5512708 A JP S5512708A
Authority
JP
Japan
Prior art keywords
area
base
diffusing
density
areas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8406778A
Other languages
Japanese (ja)
Inventor
Takashi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8406778A priority Critical patent/JPS5512708A/en
Publication of JPS5512708A publication Critical patent/JPS5512708A/en
Pending legal-status Critical Current

Links

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To improve uniformity in action by forming a high density region to an inner area of a base area which is formed within a collector area and in which emitter areas are widely destributed, thus obtaining lower current amplification rate at around a collector-base junction area in the inner area.
CONSTITUTION: A NPN transistor 4 consists of a P type base area 2 with its surface density of 1018 to 1019/cm2 made by diffusing B into the surface of a N type collector area 1 for instance, and a N type emitters 31 to 36 with their surface density of 1020 to 1021/cm2 made by diffusing P into the base area 2. Among these emitter areas, the emitter areas 33, 34, and 35 are located within the inner area of the base area, and along these emitter areas high density base areas 51 to 53 in which 52 is longer than others are formed by diffusing B with a diffusing density of aproximately 1020/cm2. This arrangement allows to reduce the density ratio of the emitters and the high density base areas, thus lower current amplification rate at the inner area than the outer area of the base area is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP8406778A 1978-07-12 1978-07-12 Semiconductor device Pending JPS5512708A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8406778A JPS5512708A (en) 1978-07-12 1978-07-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8406778A JPS5512708A (en) 1978-07-12 1978-07-12 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5512708A true JPS5512708A (en) 1980-01-29

Family

ID=13820139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8406778A Pending JPS5512708A (en) 1978-07-12 1978-07-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5512708A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124255A (en) * 1987-11-09 1989-05-17 Mitsubishi Electric Corp Power semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124255A (en) * 1987-11-09 1989-05-17 Mitsubishi Electric Corp Power semiconductor device

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