JPS556893A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS556893A JPS556893A JP7918179A JP7918179A JPS556893A JP S556893 A JPS556893 A JP S556893A JP 7918179 A JP7918179 A JP 7918179A JP 7918179 A JP7918179 A JP 7918179A JP S556893 A JPS556893 A JP S556893A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- epitaxial
- effect
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To obtain a semiconductor integrated circuit that has p and n channel junction type field-effect Tr and a high resisting-pressure npn Tr, by selectively forming a nEP region and a PEP region on one substrate by anisotropic etching technique.
CONSTITUTION: A n type channel junction form field-effect Tr is made up in the first n+ type buried region 77a built up to the first indentation portion 76a, the first n type epitaxial range 78a, the first n type epitaxial region 85a and the first n+ type extracting portion D1. A npn Tr is built up in the second n+ type buried region 77b formed to the second indentation portion 76b, the second n type epitaxial range 78b, the second epitaxial region 85b and the second n+ type extracting portion C. A p type channel junction form field-effect Tr is made up in a p type epitaxial region 83 on a semiconductor substrate 74, to which an indentation is not mounted, and the p type semiconductor substrate 74.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7918179A JPS556893A (en) | 1979-06-25 | 1979-06-25 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7918179A JPS556893A (en) | 1979-06-25 | 1979-06-25 | Semiconductor integrated circuit |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50145041A Division JPS5269587A (en) | 1975-12-08 | 1975-12-08 | Device and manufacture for high voltage resisting semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS556893A true JPS556893A (en) | 1980-01-18 |
Family
ID=13682800
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7918179A Pending JPS556893A (en) | 1979-06-25 | 1979-06-25 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS556893A (en) |
-
1979
- 1979-06-25 JP JP7918179A patent/JPS556893A/en active Pending
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