JPS556893A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS556893A
JPS556893A JP7918179A JP7918179A JPS556893A JP S556893 A JPS556893 A JP S556893A JP 7918179 A JP7918179 A JP 7918179A JP 7918179 A JP7918179 A JP 7918179A JP S556893 A JPS556893 A JP S556893A
Authority
JP
Japan
Prior art keywords
type
region
epitaxial
effect
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7918179A
Other languages
Japanese (ja)
Inventor
Naonobu Sato
Kaoru Niino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7918179A priority Critical patent/JPS556893A/en
Publication of JPS556893A publication Critical patent/JPS556893A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To obtain a semiconductor integrated circuit that has p and n channel junction type field-effect Tr and a high resisting-pressure npn Tr, by selectively forming a nEP region and a PEP region on one substrate by anisotropic etching technique.
CONSTITUTION: A n type channel junction form field-effect Tr is made up in the first n+ type buried region 77a built up to the first indentation portion 76a, the first n type epitaxial range 78a, the first n type epitaxial region 85a and the first n+ type extracting portion D1. A npn Tr is built up in the second n+ type buried region 77b formed to the second indentation portion 76b, the second n type epitaxial range 78b, the second epitaxial region 85b and the second n+ type extracting portion C. A p type channel junction form field-effect Tr is made up in a p type epitaxial region 83 on a semiconductor substrate 74, to which an indentation is not mounted, and the p type semiconductor substrate 74.
COPYRIGHT: (C)1980,JPO&Japio
JP7918179A 1979-06-25 1979-06-25 Semiconductor integrated circuit Pending JPS556893A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7918179A JPS556893A (en) 1979-06-25 1979-06-25 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7918179A JPS556893A (en) 1979-06-25 1979-06-25 Semiconductor integrated circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50145041A Division JPS5269587A (en) 1975-12-08 1975-12-08 Device and manufacture for high voltage resisting semiconductor

Publications (1)

Publication Number Publication Date
JPS556893A true JPS556893A (en) 1980-01-18

Family

ID=13682800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7918179A Pending JPS556893A (en) 1979-06-25 1979-06-25 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS556893A (en)

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