JPS5555534A - Method of making pattern by electron beam - Google Patents

Method of making pattern by electron beam

Info

Publication number
JPS5555534A
JPS5555534A JP12798978A JP12798978A JPS5555534A JP S5555534 A JPS5555534 A JP S5555534A JP 12798978 A JP12798978 A JP 12798978A JP 12798978 A JP12798978 A JP 12798978A JP S5555534 A JPS5555534 A JP S5555534A
Authority
JP
Japan
Prior art keywords
patterns
directions
electron beam
prevent
making pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12798978A
Other languages
Japanese (ja)
Other versions
JPS6243334B2 (en
Inventor
Hisashi Sugiyama
Kazunori Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP12798978A priority Critical patent/JPS5555534A/en
Publication of JPS5555534A publication Critical patent/JPS5555534A/en
Publication of JPS6243334B2 publication Critical patent/JPS6243334B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the distortion of nearby patterns due to a proximity effect, by irradiating a beam upon the patterns in different scanning directions.
CONSTITUTION: Contour lines of quantities irradiated by the scanning of a beam in a direction X are shown by dotted lines in Fig. The extension difference dy-dx between the directions X, Y is about 0.2μm. Therefore, adjacent patterns are scanned by a beam in perpendicular directions to prevent the patterns from being distorted due to the superposition of charge stored around their parts irradiated with the beam.
COPYRIGHT: (C)1980,JPO&Japio
JP12798978A 1978-10-18 1978-10-18 Method of making pattern by electron beam Granted JPS5555534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12798978A JPS5555534A (en) 1978-10-18 1978-10-18 Method of making pattern by electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12798978A JPS5555534A (en) 1978-10-18 1978-10-18 Method of making pattern by electron beam

Publications (2)

Publication Number Publication Date
JPS5555534A true JPS5555534A (en) 1980-04-23
JPS6243334B2 JPS6243334B2 (en) 1987-09-12

Family

ID=14973689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12798978A Granted JPS5555534A (en) 1978-10-18 1978-10-18 Method of making pattern by electron beam

Country Status (1)

Country Link
JP (1) JPS5555534A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0449647Y2 (en) * 1987-04-28 1992-11-24
JPH0391716A (en) * 1989-09-05 1991-04-17 Nec Home Electron Ltd Cooling device and liquid crystal projector using the same

Also Published As

Publication number Publication date
JPS6243334B2 (en) 1987-09-12

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