JPS5552261A - Photoignition type semiconductor controlling rectifier - Google Patents

Photoignition type semiconductor controlling rectifier

Info

Publication number
JPS5552261A
JPS5552261A JP12552578A JP12552578A JPS5552261A JP S5552261 A JPS5552261 A JP S5552261A JP 12552578 A JP12552578 A JP 12552578A JP 12552578 A JP12552578 A JP 12552578A JP S5552261 A JPS5552261 A JP S5552261A
Authority
JP
Japan
Prior art keywords
thyristor
primary
cathode
photoignition
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12552578A
Other languages
Japanese (ja)
Inventor
Shuzo Saeki
Takeomi Takase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12552578A priority Critical patent/JPS5552261A/en
Publication of JPS5552261A publication Critical patent/JPS5552261A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent withstand voltage drop as well as dV/dt misignition, by constituting a primary and a secondary thyristors into different components and by placing them on a common cooling radiator. CONSTITUTION:An anode and a cathode of a primary thyristor 11 are connected through copper plates or the like to radiators 22 and 21 respectively, and a secondary thyristor 31 is fixed through a copper plate or the like to the radiator 22. A gate of the primary thyristor 11 and a cathode of the secondary thyristor 31 are connected by a lead wire 4, whereas a light guide 5 is connected with the cathode of the secondary thyristor 31, and then electric ignition signals are given to the primary thyristor 11. By so doing, required power for the secondary thyristor, comparing to that of the primary thyristor, is small enough so that junction temperature of the secondary thyristor is maintained 10 deg.C or less than junction temperature of the primary thyristor, thereby withstand voltage drop and dV/dt misignition of the element can be prevented.
JP12552578A 1978-10-12 1978-10-12 Photoignition type semiconductor controlling rectifier Pending JPS5552261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12552578A JPS5552261A (en) 1978-10-12 1978-10-12 Photoignition type semiconductor controlling rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12552578A JPS5552261A (en) 1978-10-12 1978-10-12 Photoignition type semiconductor controlling rectifier

Publications (1)

Publication Number Publication Date
JPS5552261A true JPS5552261A (en) 1980-04-16

Family

ID=14912319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12552578A Pending JPS5552261A (en) 1978-10-12 1978-10-12 Photoignition type semiconductor controlling rectifier

Country Status (1)

Country Link
JP (1) JPS5552261A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589372A (en) * 1981-07-08 1983-01-19 Mitsubishi Electric Corp Optically triggered thyristor
US4757367A (en) * 1984-11-16 1988-07-12 Hitachi, Ltd. Light triggered semiconductor device with detachable auxiliary thyrister

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112691A (en) * 1977-03-14 1978-10-02 Mitsubishi Electric Corp Photo coupling semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112691A (en) * 1977-03-14 1978-10-02 Mitsubishi Electric Corp Photo coupling semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589372A (en) * 1981-07-08 1983-01-19 Mitsubishi Electric Corp Optically triggered thyristor
US4757367A (en) * 1984-11-16 1988-07-12 Hitachi, Ltd. Light triggered semiconductor device with detachable auxiliary thyrister

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