JPS55500588A - - Google Patents

Info

Publication number
JPS55500588A
JPS55500588A JP50122979A JP50122979A JPS55500588A JP S55500588 A JPS55500588 A JP S55500588A JP 50122979 A JP50122979 A JP 50122979A JP 50122979 A JP50122979 A JP 50122979A JP S55500588 A JPS55500588 A JP S55500588A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50122979A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS55500588A publication Critical patent/JPS55500588A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • G01B7/063—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators
    • G01B7/066—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness using piezoelectric resonators for measuring thickness of coating
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D5/00—Control of dimensions of material
    • G05D5/02—Control of dimensions of material of thickness, e.g. of rolled material
    • G05D5/03—Control of dimensions of material of thickness, e.g. of rolled material characterised by the use of electric means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP50122979A 1978-08-18 1979-08-10 Pending JPS55500588A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7833927 1978-08-18

Publications (1)

Publication Number Publication Date
JPS55500588A true JPS55500588A (ja) 1980-09-04

Family

ID=10499160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50122979A Pending JPS55500588A (ja) 1978-08-18 1979-08-10

Country Status (4)

Country Link
US (1) US4311725A (ja)
JP (1) JPS55500588A (ja)
CH (1) CH634424A5 (ja)
WO (1) WO1980000504A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001116902A (ja) * 1999-10-15 2001-04-27 Sony Corp 光学部品の製造装置及び製造方法

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US4444805A (en) * 1980-07-17 1984-04-24 Barr & Stroud Limited Optical coating
DE3330092A1 (de) * 1983-08-20 1985-03-07 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum einstellen der oertlichen verdampfungsleistung an verdampfern in vakuumaufdampfprozessen
US4545882A (en) * 1983-09-02 1985-10-08 Shatterproof Glass Corporation Method and apparatus for detecting sputtering target depletion
AU5952186A (en) * 1985-05-28 1986-12-24 Emkay Manufacturing Co. High speed digital frequency counter
GB2192902B (en) * 1985-08-07 1989-08-16 Commw Of Australia Control of uniformity of growing alloy film
CH669609A5 (ja) * 1986-12-23 1989-03-31 Balzers Hochvakuum
DE3700366A1 (de) * 1987-01-08 1988-07-21 Leybold Ag Einrichtung zum ermitteln der jeweiligen dicke von sich veraendernden material-schichten auf einem substrat waehrend des beschichtungsvorgangs
US4837044A (en) * 1987-01-23 1989-06-06 Itt Research Institute Rugate optical filter systems
DE3737489A1 (de) * 1987-11-02 1989-05-18 Schering Ag Verfahren zur kontrolle und/oder steuerung von metallisierungsprozessen und vorrichtung hierfuer
US5032435A (en) * 1989-03-27 1991-07-16 The United States Of America As Represented By The United States Department Of Energy UV absorption control of thin film growth
US4959244A (en) * 1989-03-27 1990-09-25 General Electric Company Temperature measurement and control for photohermal processes
US5117192A (en) * 1990-01-12 1992-05-26 Leybold Inficon Inc. Control circuitry for quartz crystal deposition monitor
JP2913745B2 (ja) * 1990-04-10 1999-06-28 松下電器産業株式会社 真空蒸着装置
JPH049748A (ja) * 1990-04-27 1992-01-14 Sharp Corp ニオブ酸リチウム薄膜の評価方法およびその製造装置
US5656138A (en) * 1991-06-18 1997-08-12 The Optical Corporation Of America Very high vacuum magnetron sputtering method and apparatus for precision optical coatings
US5201215A (en) * 1991-10-17 1993-04-13 The United States Of America As Represented By The United States Department Of Energy Method for simultaneous measurement of mass loading and fluid property changes using a quartz crystal microbalance
US5240736A (en) * 1992-10-26 1993-08-31 Ford Motor Company Method and apparatus for in-situ measuring filament temperature and the thickness of a diamond film
DE4236264C1 (ja) * 1992-10-27 1993-09-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De
US5780803A (en) * 1993-02-16 1998-07-14 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Process for the stabilization of plasma generation by means of electron beam vaporizer
US5911856A (en) * 1993-09-03 1999-06-15 Canon Kabushiki Kaisha Method for forming thin film
US5772861A (en) * 1995-10-16 1998-06-30 Viratec Thin Films, Inc. System for evaluating thin film coatings
GB9700017D0 (en) * 1997-01-02 1997-02-19 Applied Vision Ltd Substrate coating apparatus
US6436246B1 (en) 1997-01-27 2002-08-20 Micron Technology, Inc. Collimated sputter deposition monitor using sheet resistance
US6172812B1 (en) 1997-01-27 2001-01-09 Peter D. Haaland Anti-reflection coatings and coated articles
JP2001509910A (ja) * 1997-01-27 2001-07-24 ディー． ハーランド，ペーター 光学基材からの反射を抑制するためのコーティング、方法および装置
US6453264B1 (en) 1997-04-30 2002-09-17 Southwest Research Institute Surface flaw detection using spatial raman-based imaging
US6038525A (en) * 1997-04-30 2000-03-14 Southwest Research Institute Process control for pulsed laser deposition using raman spectroscopy
US6217720B1 (en) * 1997-06-03 2001-04-17 National Research Council Of Canada Multi-layer reactive sputtering method with reduced stabilization time
US6039806A (en) * 1998-04-20 2000-03-21 E-Tek Dynamics, Inc. Precision thickness optical coating system and method of operation thereof
US6476340B1 (en) * 1999-04-14 2002-11-05 The Boc Group, Inc. Electron beam gun with grounded shield to prevent arc-down and gas bleed to protect the filament
US6370955B1 (en) 1999-06-15 2002-04-16 Massachusetts Institute Of Technology High-temperature balance
JP2002022936A (ja) * 2000-07-03 2002-01-23 Japan Aviation Electronics Industry Ltd 光学多層膜フィルタの成膜方法、成膜装置及び光学式膜厚計
US20020008891A1 (en) * 2000-07-10 2002-01-24 Atomic Telecom Substrate fixture for high-yield production of thin film based dense wavelength division multiplexers
AU2002218653A1 (en) * 2000-10-13 2002-04-29 Tokyo Electron Limited Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy
FR2816714B1 (fr) * 2000-11-16 2003-10-10 Shakticom Procede et dispositif de depot de couches minces
JP3632757B2 (ja) * 2001-01-31 2005-03-23 古河電気工業株式会社 光学フィルタの製造方法
WO2002063064A1 (fr) * 2001-02-07 2002-08-15 Asahi Glass Company, Limited Dispositif de projection et procede pour realiser un film de projection
US6513451B2 (en) * 2001-04-20 2003-02-04 Eastman Kodak Company Controlling the thickness of an organic layer in an organic light-emiting device
US6798499B2 (en) * 2001-07-18 2004-09-28 Alps Electric Co., Ltd. Method of forming optical thin films on substrate at high accuracy and apparatus therefor
GB2379735A (en) * 2001-09-14 2003-03-19 Qinetiq Ltd Method and apparatus for controlling the growth of thin film during deposition process by measuring the rate of change of optical thickness of the thin-film
US6911090B2 (en) * 2001-10-12 2005-06-28 International Business Machines Corporation Real-time process control for optical component fabrication
TWI242602B (en) * 2001-11-02 2005-11-01 Ulvac Inc Thin film forming apparatus and method
JP4449293B2 (ja) * 2001-12-19 2010-04-14 株式会社ニコン 成膜装置、及び光学部材の製造方法
JP2003342728A (ja) * 2002-05-24 2003-12-03 Alps Electric Co Ltd 光学薄膜の成膜装置及び成膜方法
US8679307B2 (en) * 2002-08-02 2014-03-25 E.A. Fischione Instruments, Inc. Method and apparatus for preparing specimens for microscopy
US20040099525A1 (en) * 2002-11-21 2004-05-27 Plasmion Corporation Method of forming oxide thin films using negative sputter ion beam source
US20040129557A1 (en) * 2002-11-21 2004-07-08 Plasmion Corporation Method of forming non-oxide thin films using negative sputter ion beam source
US6879744B2 (en) * 2003-01-07 2005-04-12 Georgi A. Atanasov Optical monitoring of thin film deposition
WO2005045891A2 (en) * 2003-10-31 2005-05-19 Tangidyne Corporation Method and apparatus for measuring and monitoring coatings
US20050150758A1 (en) * 2004-01-09 2005-07-14 Yakshin Andrey E. Processes and device for the deposition of films on substrates
US8778144B2 (en) * 2004-09-28 2014-07-15 Oerlikon Advanced Technologies Ag Method for manufacturing magnetron coated substrates and magnetron sputter source
US20090194024A1 (en) * 2008-01-31 2009-08-06 Applied Materials, Inc. Cvd apparatus
US20100266747A1 (en) * 2009-04-21 2010-10-21 Flir Systems, Inc. Combined crystal/optical assembly and method of its use
EP2508645B1 (en) * 2011-04-06 2015-02-25 Applied Materials, Inc. Evaporation system with measurement unit
AT512950B1 (de) * 2012-06-04 2016-06-15 Leica Microsysteme Gmbh Vorrichtung zum Präparieren, insbesondere Beschichten, von Proben
AT512949B1 (de) * 2012-06-04 2016-06-15 Leica Microsysteme Gmbh Verfahren zur Beschichtung mit einem Verdampfungsmaterial
BE1022682B1 (nl) * 2015-01-11 2016-07-14 Soleras Advanced Coatings Bvba Een deksel met een sensorsysteem voor een configureerbaar meetsysteem voor een configureerbaar sputtersysteem
EP3091561B1 (en) * 2015-05-06 2019-09-04 safematic GmbH Sputter unit
CN107916410B (zh) * 2017-11-23 2019-11-05 湖北东田光电材料科技有限公司 一种检测光学镀膜厚度的反射式光学监控方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5163645A (ja) * 1974-11-30 1976-06-02 Shimadzu Corp Makuatsukenshutsusochi
JPS5271389A (en) * 1975-12-11 1977-06-14 Ulvac Corp Film thicknes monitoring device of thin flm forming apparatus

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US3400687A (en) * 1966-02-25 1968-09-10 Sylvania Electric Prod Film thickness monitoring apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5163645A (ja) * 1974-11-30 1976-06-02 Shimadzu Corp Makuatsukenshutsusochi
JPS5271389A (en) * 1975-12-11 1977-06-14 Ulvac Corp Film thicknes monitoring device of thin flm forming apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001116902A (ja) * 1999-10-15 2001-04-27 Sony Corp 光学部品の製造装置及び製造方法

Also Published As

Publication number Publication date
CH634424A5 (fr) 1983-01-31
WO1980000504A1 (en) 1980-03-20
US4311725A (en) 1982-01-19

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