AU2002218653A1 - Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy - Google Patents
Apparatus for measuring temperatures of a wafer using specular reflection spectroscopyInfo
- Publication number
- AU2002218653A1 AU2002218653A1 AU2002218653A AU1865302A AU2002218653A1 AU 2002218653 A1 AU2002218653 A1 AU 2002218653A1 AU 2002218653 A AU2002218653 A AU 2002218653A AU 1865302 A AU1865302 A AU 1865302A AU 2002218653 A1 AU2002218653 A1 AU 2002218653A1
- Authority
- AU
- Australia
- Prior art keywords
- wafer
- specular reflection
- measuring temperatures
- reflection spectroscopy
- spectroscopy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/12—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance
- G01K11/125—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using changes in colour, translucency or reflectance using changes in reflectance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23992200P | 2000-10-13 | 2000-10-13 | |
US60239922 | 2000-10-13 | ||
PCT/US2001/027767 WO2002033369A1 (en) | 2000-10-13 | 2001-10-12 | Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002218653A1 true AU2002218653A1 (en) | 2002-04-29 |
Family
ID=22904327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002218653A Abandoned AU2002218653A1 (en) | 2000-10-13 | 2001-10-12 | Apparatus for measuring temperatures of a wafer using specular reflection spectroscopy |
Country Status (4)
Country | Link |
---|---|
US (1) | US7234862B2 (en) |
AU (1) | AU2002218653A1 (en) |
TW (1) | TW523850B (en) |
WO (1) | WO2002033369A1 (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7734439B2 (en) * | 2002-06-24 | 2010-06-08 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
WO2004053946A2 (en) * | 2002-12-09 | 2004-06-24 | Koninklijke Philips Electronics N.V. | System and method for suppression of wafer temperature drift in cold-wall cvd system |
US7208067B2 (en) | 2003-03-27 | 2007-04-24 | Tokyo Electron Limited | Method and system for monitoring RF impedance to determine conditions of a wafer on an electrostatic chuck |
US20050106876A1 (en) * | 2003-10-09 | 2005-05-19 | Taylor Charles A.Ii | Apparatus and method for real time measurement of substrate temperatures for use in semiconductor growth and wafer processing |
US7301149B2 (en) * | 2004-05-06 | 2007-11-27 | The Board Of Trustees Of The University Of Illinois | Apparatus and method for determining a thickness of a deposited material |
KR100777041B1 (en) * | 2004-10-22 | 2007-11-16 | 삼성전자주식회사 | Device and Method for Heat Test |
CN101258387A (en) | 2005-07-05 | 2008-09-03 | 马特森技术公司 | Method and system for determining optical properties of semiconductor wafers |
KR100681693B1 (en) * | 2005-10-21 | 2007-02-09 | 재단법인 포항산업과학연구원 | Error source radiance optical filtering method and system in infrared radiation thermometer |
US7543981B2 (en) * | 2006-06-29 | 2009-06-09 | Mattson Technology, Inc. | Methods for determining wafer temperature |
US7451054B2 (en) * | 2007-01-30 | 2008-11-11 | Tokyo Electron Limited | Method of using a wafer-temperature-dependent profile library |
US20080224030A1 (en) * | 2007-03-13 | 2008-09-18 | International Business Machines Corporation | Non-contact thermal imaging system for heterogeneous components |
US7976216B2 (en) | 2007-12-20 | 2011-07-12 | Mattson Technology, Inc. | Determining the temperature of silicon at high temperatures |
JP5955223B2 (en) * | 2009-12-23 | 2016-07-20 | ヘレウス ノーブルライト アメリカ エルエルシー | Lamp based on UVLED for small curing lamp assembly |
KR101939406B1 (en) * | 2010-05-03 | 2019-01-16 | 오로라 솔라 테크놀로지스 (캐나다) 인크. | Non-contact measurement of the dopant content of semiconductor layers |
US20120244290A1 (en) | 2011-03-24 | 2012-09-27 | United Technologies Corporation | Deposition Substrate Temperature and Monitoring |
DE102012106955B4 (en) * | 2012-07-31 | 2014-04-03 | Netzsch-Gerätebau GmbH | Apparatus and method for photothermal examination of a sample |
DE102018128983B4 (en) | 2017-11-30 | 2023-11-02 | Laytec Ag | Method for determining temperature and associated spectral reflection measuring system |
EP3495790A1 (en) * | 2017-12-05 | 2019-06-12 | Laser Systems & Solutions of Europe | Apparatus and method for measuring the surface temperature of a substrate |
JP7236985B2 (en) * | 2019-11-15 | 2023-03-10 | 東京エレクトロン株式会社 | Temperature measurement system, temperature measurement method, and substrate processing apparatus |
CN114729837A (en) * | 2019-11-19 | 2022-07-08 | 朗姆研究公司 | Temperature monitoring |
DE102020114734B4 (en) | 2020-06-03 | 2023-10-05 | Laytec Aktiengesellschaft | Method and device for in-situ determination of the temperature of a sample |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH634424A5 (en) * | 1978-08-18 | 1983-01-31 | Nat Res Dev | METHOD AND APPARATUS FOR DETECTING AND CONTROLLING THE DEPOSITION OF A FINE FILM. |
JPS5779417A (en) * | 1980-11-04 | 1982-05-18 | Mitsubishi Electric Corp | Temperature measuring device |
US4389970A (en) * | 1981-03-16 | 1983-06-28 | Energy Conversion Devices, Inc. | Apparatus for regulating substrate temperature in a continuous plasma deposition process |
JPS57197433A (en) | 1981-05-29 | 1982-12-03 | Toshiba Corp | Temperature measuring device using optical application |
JPS59111027A (en) * | 1982-12-17 | 1984-06-27 | Fuji Electric Corp Res & Dev Ltd | Measurement of temperature |
US4576485A (en) * | 1983-04-29 | 1986-03-18 | Westinghouse Electric Corp. | Method and apparatus for measuring temperature profile with a single optical fiber |
US4749254A (en) * | 1985-04-03 | 1988-06-07 | Seaver George A | Optical sensor system |
US4789992A (en) * | 1985-10-15 | 1988-12-06 | Luxtron Corporation | Optical temperature measurement techniques |
US4989970A (en) * | 1989-04-26 | 1991-02-05 | Campbell Gregory A | Non-contact sensing apparatus and method for temperature profile and thickness determination and control of radiation translucent materials |
US5118200A (en) * | 1990-06-13 | 1992-06-02 | Varian Associates, Inc. | Method and apparatus for temperature measurements |
US20020004309A1 (en) * | 1990-07-31 | 2002-01-10 | Kenneth S. Collins | Processes used in an inductively coupled plasma reactor |
US5255286A (en) * | 1991-05-17 | 1993-10-19 | Texas Instruments Incorporated | Multi-point pyrometry with real-time surface emissivity compensation |
US5645351A (en) * | 1992-05-20 | 1997-07-08 | Hitachi, Ltd. | Temperature measuring method using thermal expansion and an apparatus for carrying out the same |
US5265957A (en) * | 1992-08-11 | 1993-11-30 | Texas Instruments Incorporated | Wireless temperature calibration device and method |
US5322361A (en) * | 1993-01-28 | 1994-06-21 | C.I. Systems (Israel) Ltd. | Method and apparatus for measuring temperature |
US5388909A (en) * | 1993-09-16 | 1995-02-14 | Johnson; Shane R. | Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap |
US5474381A (en) * | 1993-11-30 | 1995-12-12 | Texas Instruments Incorporated | Method for real-time semiconductor wafer temperature measurement based on a surface roughness characteristic of the wafer |
US5823681A (en) * | 1994-08-02 | 1998-10-20 | C.I. Systems (Israel) Ltd. | Multipoint temperature monitoring apparatus for semiconductor wafers during processing |
GB9415869D0 (en) * | 1994-08-05 | 1994-09-28 | Univ Mcgill | Substrate measurement by infrared spectroscopy |
US5772323A (en) * | 1994-10-26 | 1998-06-30 | Felice; Ralph A. | Temperature determining device and process |
US5715361A (en) * | 1995-04-13 | 1998-02-03 | Cvc Products, Inc. | Rapid thermal processing high-performance multizone illuminator for wafer backside heating |
US5636258A (en) * | 1995-10-24 | 1997-06-03 | Siemens Aktiengesellschaft | In-situ temperature measurement using X-ray diffraction |
US5938335A (en) * | 1996-04-08 | 1999-08-17 | Applied Materials, Inc. | Self-calibrating temperature probe |
US6090210A (en) * | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
US5874711A (en) * | 1997-04-17 | 1999-02-23 | Ag Associates | Apparatus and method for determining the temperature of a radiating surface |
US6027244A (en) * | 1997-07-24 | 2000-02-22 | Steag Rtp Systems, Inc. | Apparatus for determining the temperature of a semi-transparent radiating body |
US5841110A (en) * | 1997-08-27 | 1998-11-24 | Steag-Ast Gmbh | Method and apparatus for improved temperature control in rapid thermal processing (RTP) systems |
JPH1187247A (en) * | 1997-09-02 | 1999-03-30 | Matsushita Electron Corp | Manufacture apparatus of semiconductor apparatus and manufacture thereof |
US6129807A (en) * | 1997-10-06 | 2000-10-10 | Applied Materials, Inc. | Apparatus for monitoring processing of a substrate |
US6174081B1 (en) * | 1998-01-30 | 2001-01-16 | The United States Of America As Represented By The Secretary Of The Navy | Specular reflection optical bandgap thermometry |
US6183130B1 (en) * | 1998-02-20 | 2001-02-06 | Applied Materials, Inc. | Apparatus for substrate temperature measurement using a reflecting cavity and detector |
US6062729A (en) * | 1998-03-31 | 2000-05-16 | Lam Research Corporation | Rapid IR transmission thermometry for wafer temperature sensing |
US6830942B1 (en) * | 1999-04-06 | 2004-12-14 | Lucent Technologies Inc. | Method for processing silicon workpieces using hybrid optical thermometer system |
US6293696B1 (en) * | 1999-05-03 | 2001-09-25 | Steag Rtp Systems, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
US6151446A (en) * | 1999-07-06 | 2000-11-21 | Applied Materials, Inc. | Apparatus and method for thermally processing substrates including a processor using multiple detection signals |
WO2001005020A1 (en) * | 1999-07-13 | 2001-01-18 | Tokyo Electron Limited | Radio frequency power source for generating an inductively coupled plasma |
TW425635B (en) * | 1999-08-23 | 2001-03-11 | Promos Technologies Inc | Rapid thermal processing method and its device |
US6479801B1 (en) * | 1999-10-22 | 2002-11-12 | Tokyo Electron Limited | Temperature measuring method, temperature control method and processing apparatus |
JP4808889B2 (en) * | 2000-01-05 | 2011-11-02 | 東京エレクトロン株式会社 | Wafer band edge measurement method using transmission spectroscopy and process for controlling wafer temperature uniformity |
JP4166400B2 (en) * | 2000-02-16 | 2008-10-15 | 東京エレクトロン株式会社 | Radiation temperature measurement method |
US6481886B1 (en) * | 2000-02-24 | 2002-11-19 | Applied Materials Inc. | Apparatus for measuring pedestal and substrate temperature in a semiconductor wafer processing system |
DE10020228A1 (en) | 2000-04-25 | 2001-10-31 | Abb Research Ltd | High voltage insulation system |
US6799137B2 (en) * | 2000-06-02 | 2004-09-28 | Engelhard Corporation | Wafer temperature measurement method for plasma environments |
US6563092B1 (en) * | 2001-11-28 | 2003-05-13 | Novellus Systems, Inc. | Measurement of substrate temperature in a process chamber using non-contact filtered infrared pyrometry |
US6839507B2 (en) * | 2002-10-07 | 2005-01-04 | Applied Materials, Inc. | Black reflector plate |
-
2001
- 2001-10-12 WO PCT/US2001/027767 patent/WO2002033369A1/en active Application Filing
- 2001-10-12 TW TW090125256A patent/TW523850B/en not_active IP Right Cessation
- 2001-10-12 US US10/398,652 patent/US7234862B2/en not_active Expired - Fee Related
- 2001-10-12 AU AU2002218653A patent/AU2002218653A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW523850B (en) | 2003-03-11 |
US20040061057A1 (en) | 2004-04-01 |
WO2002033369A1 (en) | 2002-04-25 |
US7234862B2 (en) | 2007-06-26 |
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