JPS5547711A - Amplifying circuit - Google Patents

Amplifying circuit

Info

Publication number
JPS5547711A
JPS5547711A JP12034978A JP12034978A JPS5547711A JP S5547711 A JPS5547711 A JP S5547711A JP 12034978 A JP12034978 A JP 12034978A JP 12034978 A JP12034978 A JP 12034978A JP S5547711 A JPS5547711 A JP S5547711A
Authority
JP
Japan
Prior art keywords
field effect
effect transistors
capacitor
series
amplifying circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12034978A
Other languages
Japanese (ja)
Inventor
Gichu Oota
Nobutaka Amada
Shigeki Inoue
Shunji Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12034978A priority Critical patent/JPS5547711A/en
Publication of JPS5547711A publication Critical patent/JPS5547711A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/42—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers
    • H03F3/426—Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers with junction-FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To realize high break down voltage and high output of circuit, by connecting field effect transistors in series. CONSTITUTION:The capacitor 7 is connected in parallel with one of the resistors 4 and 5 connected to the input terminal of amplifying element driven with a signal caused at the load among the field effect transistors 1-1 and 1-2 connected in series. The value of the capacitor 7 selected by the resistor, input capacitance CGS and gm can cancel the phase shift caused especially at high band for the output of the field effect transistors 1-1 and 1-2.
JP12034978A 1978-10-02 1978-10-02 Amplifying circuit Pending JPS5547711A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12034978A JPS5547711A (en) 1978-10-02 1978-10-02 Amplifying circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12034978A JPS5547711A (en) 1978-10-02 1978-10-02 Amplifying circuit

Publications (1)

Publication Number Publication Date
JPS5547711A true JPS5547711A (en) 1980-04-04

Family

ID=14784023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12034978A Pending JPS5547711A (en) 1978-10-02 1978-10-02 Amplifying circuit

Country Status (1)

Country Link
JP (1) JPS5547711A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63246905A (en) * 1987-04-01 1988-10-13 Nec Corp Field effect transistor circuit
JPH01254014A (en) * 1988-04-04 1989-10-11 Toshiba Corp Power amplifier
JPH02503252A (en) * 1986-10-09 1990-10-04 モンロー　エレクトロニクス　インコーポレーテッド high voltage amplifier
JP2005159860A (en) * 2003-11-27 2005-06-16 Mitsubishi Electric Corp Wideband amplifier
JP2007060458A (en) * 2005-08-26 2007-03-08 Mitsubishi Electric Corp Cascode connection circuit
CN102684180A (en) * 2012-05-23 2012-09-19 乐鑫信息科技（上海）有限公司 Charge pump output protection drive device for NFC (near field communication) emitting device
JP6420017B1 (en) * 2018-06-20 2018-11-07 小倉 将希 High voltage output amplifier

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02503252A (en) * 1986-10-09 1990-10-04 モンロー　エレクトロニクス　インコーポレーテッド high voltage amplifier
JPS63246905A (en) * 1987-04-01 1988-10-13 Nec Corp Field effect transistor circuit
JPH01254014A (en) * 1988-04-04 1989-10-11 Toshiba Corp Power amplifier
JP2005159860A (en) * 2003-11-27 2005-06-16 Mitsubishi Electric Corp Wideband amplifier
JP2007060458A (en) * 2005-08-26 2007-03-08 Mitsubishi Electric Corp Cascode connection circuit
CN102684180A (en) * 2012-05-23 2012-09-19 乐鑫信息科技（上海）有限公司 Charge pump output protection drive device for NFC (near field communication) emitting device
CN102684180B (en) * 2012-05-23 2015-07-01 乐鑫信息科技（上海）有限公司 Charge pump output protection drive device for NFC (near field communication) emitting device
JP6420017B1 (en) * 2018-06-20 2018-11-07 小倉 将希 High voltage output amplifier
CN110620557A (en) * 2018-06-20 2019-12-27 小仓将希 High voltage output amplifier
CN110620557B (en) * 2018-06-20 2023-07-28 小仓将希 High voltage output amplifier

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