JPS5544270A - C-mos circuit of low power consumption - Google Patents

C-mos circuit of low power consumption

Info

Publication number
JPS5544270A
JPS5544270A JP11762878A JP11762878A JPS5544270A JP S5544270 A JPS5544270 A JP S5544270A JP 11762878 A JP11762878 A JP 11762878A JP 11762878 A JP11762878 A JP 11762878A JP S5544270 A JPS5544270 A JP S5544270A
Authority
JP
Japan
Prior art keywords
circuit
elements
power consumption
constitution
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11762878A
Other languages
Japanese (ja)
Inventor
Takahito Saito
Masaru Matsubayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP11762878A priority Critical patent/JPS5544270A/en
Publication of JPS5544270A publication Critical patent/JPS5544270A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Abstract

PURPOSE:To enable low voltage operation and to reduce the power consumption and to make suitable the element for crystal oscillation type electronic wrist watches, by providing newly the voltage dividing circuit to normal bistable circuit. CONSTITUTION:The C-MOS bistable circuit is constituted by using P and N channel MOSFET elements 1 and 2, 3 and 4. That is, the two C-MOS circuits in pair are cross-connected, i.e., the output C of the right circuit is connected to the input A of the left circuit and the input D of the right circuit is to the output B of the left circuit respectively. With this constitution, diodes 5 and 6 are inserted in series with between the elements 1 and 2 and elements 3 and 4, and the anode and cathode electrodes of the diode 5 are connected to the gate of the elements 3 and 4. Similarly, the electrode of the diode 6 is connected to the elements 1 and 2, and the power supply is set to a half the conventional systems.
JP11762878A 1978-09-25 1978-09-25 C-mos circuit of low power consumption Pending JPS5544270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11762878A JPS5544270A (en) 1978-09-25 1978-09-25 C-mos circuit of low power consumption

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11762878A JPS5544270A (en) 1978-09-25 1978-09-25 C-mos circuit of low power consumption

Publications (1)

Publication Number Publication Date
JPS5544270A true JPS5544270A (en) 1980-03-28

Family

ID=14716425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11762878A Pending JPS5544270A (en) 1978-09-25 1978-09-25 C-mos circuit of low power consumption

Country Status (1)

Country Link
JP (1) JPS5544270A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62202617A (en) * 1986-03-03 1987-09-07 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62202617A (en) * 1986-03-03 1987-09-07 Nippon Telegr & Teleph Corp <Ntt> Semiconductor integrated circuit

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