JPS5544270A - C-mos circuit of low power consumption - Google Patents
C-mos circuit of low power consumptionInfo
- Publication number
- JPS5544270A JPS5544270A JP11762878A JP11762878A JPS5544270A JP S5544270 A JPS5544270 A JP S5544270A JP 11762878 A JP11762878 A JP 11762878A JP 11762878 A JP11762878 A JP 11762878A JP S5544270 A JPS5544270 A JP S5544270A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- elements
- power consumption
- constitution
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Abstract
PURPOSE:To enable low voltage operation and to reduce the power consumption and to make suitable the element for crystal oscillation type electronic wrist watches, by providing newly the voltage dividing circuit to normal bistable circuit. CONSTITUTION:The C-MOS bistable circuit is constituted by using P and N channel MOSFET elements 1 and 2, 3 and 4. That is, the two C-MOS circuits in pair are cross-connected, i.e., the output C of the right circuit is connected to the input A of the left circuit and the input D of the right circuit is to the output B of the left circuit respectively. With this constitution, diodes 5 and 6 are inserted in series with between the elements 1 and 2 and elements 3 and 4, and the anode and cathode electrodes of the diode 5 are connected to the gate of the elements 3 and 4. Similarly, the electrode of the diode 6 is connected to the elements 1 and 2, and the power supply is set to a half the conventional systems.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11762878A JPS5544270A (en) | 1978-09-25 | 1978-09-25 | C-mos circuit of low power consumption |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11762878A JPS5544270A (en) | 1978-09-25 | 1978-09-25 | C-mos circuit of low power consumption |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5544270A true JPS5544270A (en) | 1980-03-28 |
Family
ID=14716425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11762878A Pending JPS5544270A (en) | 1978-09-25 | 1978-09-25 | C-mos circuit of low power consumption |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5544270A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62202617A (en) * | 1986-03-03 | 1987-09-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit |
-
1978
- 1978-09-25 JP JP11762878A patent/JPS5544270A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62202617A (en) * | 1986-03-03 | 1987-09-07 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit |
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