JPS5531154A - Plasma etching apparatus - Google Patents

Plasma etching apparatus

Info

Publication number
JPS5531154A
JPS5531154A JP10394278A JP10394278A JPS5531154A JP S5531154 A JPS5531154 A JP S5531154A JP 10394278 A JP10394278 A JP 10394278A JP 10394278 A JP10394278 A JP 10394278A JP S5531154 A JPS5531154 A JP S5531154A
Authority
JP
Japan
Prior art keywords
electrode
workpiece
net
electrodes
reaction tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10394278A
Other languages
English (en)
Other versions
JPS5617432B2 (ja
Inventor
Seiji Ikeda
Tetsuya Hayashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10394278A priority Critical patent/JPS5531154A/ja
Priority to DE2933850A priority patent/DE2933850C2/de
Priority to US06/069,058 priority patent/US4243506A/en
Publication of JPS5531154A publication Critical patent/JPS5531154A/ja
Publication of JPS5617432B2 publication Critical patent/JPS5617432B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
JP10394278A 1978-08-28 1978-08-28 Plasma etching apparatus Granted JPS5531154A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10394278A JPS5531154A (en) 1978-08-28 1978-08-28 Plasma etching apparatus
DE2933850A DE2933850C2 (de) 1978-08-28 1979-08-21 Plasma-Ätzvorrichtung
US06/069,058 US4243506A (en) 1978-08-28 1979-08-23 Plasma-etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10394278A JPS5531154A (en) 1978-08-28 1978-08-28 Plasma etching apparatus

Publications (2)

Publication Number Publication Date
JPS5531154A true JPS5531154A (en) 1980-03-05
JPS5617432B2 JPS5617432B2 (ja) 1981-04-22

Family

ID=14367489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10394278A Granted JPS5531154A (en) 1978-08-28 1978-08-28 Plasma etching apparatus

Country Status (3)

Country Link
US (1) US4243506A (ja)
JP (1) JPS5531154A (ja)
DE (1) DE2933850C2 (ja)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5656636A (en) * 1979-10-13 1981-05-18 Mitsubishi Electric Corp Processing method of fine pattern
DE2950329C2 (de) * 1979-12-14 1985-06-05 Leybold-Heraeus GmbH, 5000 Köln Einrichtung zum Abtragen von Material von der Oberfläche eines Targets
EP0040081B1 (en) * 1980-05-12 1984-09-12 Fujitsu Limited Method and apparatus for plasma etching
DE3026164A1 (de) * 1980-07-08 1982-01-28 Europäische Atomgemeinschaft (EURATOM), Kirchberg Verfahren und vorrichtung zur entladungschemischen behandlung empfindlicher werkstuecke durch einsatz der glimmentladung
FR2494890A1 (fr) * 1980-11-21 1982-05-28 Lcc Cice Cie Euro Composant El Procede pour ameliorer l'isolation electrique d'un empilage de films dielectriques metallises et appareil de mise en oeuvre dudit procede
US4375385A (en) * 1982-03-25 1983-03-01 Rca Corporation Plasma etching of aluminum
EP0106497B1 (en) * 1982-09-10 1988-06-01 Nippon Telegraph And Telephone Corporation Ion shower apparatus
US4416725A (en) * 1982-12-30 1983-11-22 International Business Machines Corporation Copper texturing process
JPS59184527A (ja) * 1983-04-05 1984-10-19 Canon Inc 気相法装置
US4731539A (en) * 1983-05-26 1988-03-15 Plaur Corporation Method and apparatus for introducing normally solid material into substrate surfaces
US4520268A (en) * 1983-05-26 1985-05-28 Pauline Y. Lau Method and apparatus for introducing normally solid materials into substrate surfaces
JPS60175919U (ja) * 1984-05-01 1985-11-21 東京部品工業株式会社 ドラムブレ−キにおけるスキマ自動調整装置
CA1281439C (en) * 1985-02-05 1991-03-12 James F. Battey Plasma reactor and method for removing photoresist
JPS62222633A (ja) * 1986-03-25 1987-09-30 Sharp Corp 半導体素子の製造方法
DE3708717A1 (de) * 1987-03-18 1988-09-29 Hans Prof Dr Rer Nat Oechsner Verfahren und vorrichtung zur bearbeitung von festkoerperoberflaechen durch teilchenbeschuss
JPH0521393A (ja) * 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
US5316739A (en) * 1991-08-20 1994-05-31 Bridgestone Corporation Method and apparatus for surface treatment
US5711849A (en) * 1995-05-03 1998-01-27 Daniel L. Flamm Process optimization in gas phase dry etching
US6391216B1 (en) * 1997-09-22 2002-05-21 National Research Institute For Metals Method for reactive ion etching and apparatus therefor
US6455014B1 (en) * 1999-05-14 2002-09-24 Mesosystems Technology, Inc. Decontamination of fluids or objects contaminated with chemical or biological agents using a distributed plasma reactor
US6547979B1 (en) * 2000-08-31 2003-04-15 Micron Technology, Inc. Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambers
DE10340147B4 (de) * 2002-08-27 2014-04-10 Kyocera Corp. Trockenätzverfahren und Trockenätzvorrichtung
US7459098B2 (en) * 2002-08-28 2008-12-02 Kyocera Corporation Dry etching apparatus, dry etching method, and plate and tray used therein
US7556741B2 (en) * 2002-08-28 2009-07-07 Kyocera Corporation Method for producing a solar cell
US20070204957A1 (en) * 2006-03-01 2007-09-06 Braymen Steven D Plasma processing of large workpieces
JP4909929B2 (ja) * 2007-04-18 2012-04-04 パナソニック株式会社 分圧測定方法および分圧測定装置
US9677008B2 (en) 2014-12-04 2017-06-13 Harris Corporation Hydrocarbon emulsion separator system and related methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1290863A (ja) * 1969-08-05 1972-09-27
US4123663A (en) * 1975-01-22 1978-10-31 Tokyo Shibaura Electric Co., Ltd. Gas-etching device
GB1550853A (en) * 1975-10-06 1979-08-22 Hitachi Ltd Apparatus and process for plasma treatment
US4158589A (en) * 1977-12-30 1979-06-19 International Business Machines Corporation Negative ion extractor for a plasma etching apparatus

Also Published As

Publication number Publication date
US4243506A (en) 1981-01-06
DE2933850C2 (de) 1982-11-04
JPS5617432B2 (ja) 1981-04-22
DE2933850A1 (de) 1980-03-13

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