JPS5529118A - Boron deposition method - Google Patents

Boron deposition method

Info

Publication number
JPS5529118A
JPS5529118A JP10179478A JP10179478A JPS5529118A JP S5529118 A JPS5529118 A JP S5529118A JP 10179478 A JP10179478 A JP 10179478A JP 10179478 A JP10179478 A JP 10179478A JP S5529118 A JPS5529118 A JP S5529118A
Authority
JP
Japan
Prior art keywords
thickness
range
film
vacuum degree
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10179478A
Other languages
Japanese (ja)
Inventor
Hideaki Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10179478A priority Critical patent/JPS5529118A/en
Publication of JPS5529118A publication Critical patent/JPS5529118A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: To make BSG film largest in thickness, by selecting the vacuum degrees of 0.2W0.6 torrs.
CONSTITUTION: The dispersion of the impurities concentration and resistance factor of the semiconductor range formed through B-diffusion depends on the vacuum degree developed on B-deposition and on the thickness of BSG film. Said BSG film is largest in thickness when vacuum degree is within a given range, and the differential in the thcikness of film due to that of vacuum degree is small. Film thickness is small and diffusion efficiency is low outside said range. Semiconductor range without any dispersion of resistance factor can be obtained by selecting the vacuum degrees of 0.2W0.6 torrs. The variation of resistance factor due to the deviation of vacyum degree is small and large within and outside vacuum degree range respectively.
COPYRIGHT: (C)1980,JPO&Japio
JP10179478A 1978-08-23 1978-08-23 Boron deposition method Pending JPS5529118A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10179478A JPS5529118A (en) 1978-08-23 1978-08-23 Boron deposition method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10179478A JPS5529118A (en) 1978-08-23 1978-08-23 Boron deposition method

Publications (1)

Publication Number Publication Date
JPS5529118A true JPS5529118A (en) 1980-03-01

Family

ID=14310056

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10179478A Pending JPS5529118A (en) 1978-08-23 1978-08-23 Boron deposition method

Country Status (1)

Country Link
JP (1) JPS5529118A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57501983A (en) * 1980-12-15 1982-11-04
JPH03195554A (en) * 1989-12-26 1991-08-27 Dia Seiyaku Kk Emergency adhesive tape

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57501983A (en) * 1980-12-15 1982-11-04
JPH03195554A (en) * 1989-12-26 1991-08-27 Dia Seiyaku Kk Emergency adhesive tape

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