JPS5527890A - Manufacture of highly pure silicon - Google Patents
Manufacture of highly pure siliconInfo
- Publication number
- JPS5527890A JPS5527890A JP5980079A JP5980079A JPS5527890A JP S5527890 A JPS5527890 A JP S5527890A JP 5980079 A JP5980079 A JP 5980079A JP 5980079 A JP5980079 A JP 5980079A JP S5527890 A JPS5527890 A JP S5527890A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- highly pure
- pure silicon
- silicon
- highly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US93500978A | 1978-08-18 | 1978-08-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5527890A true JPS5527890A (en) | 1980-02-28 |
JPS6228083B2 JPS6228083B2 (ja) | 1987-06-18 |
Family
ID=25466438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5980079A Granted JPS5527890A (en) | 1978-08-18 | 1979-05-17 | Manufacture of highly pure silicon |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5527890A (ja) |
CA (1) | CA1145117A (ja) |
DE (2) | DE2919086C2 (ja) |
FR (1) | FR2433479B1 (ja) |
GB (1) | GB2028289B (ja) |
IT (1) | IT1193203B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008506621A (ja) * | 2004-07-16 | 2008-03-06 | インスティチュート フォー エネルギーテックニック | 半導体級(seg)シリコンを連続生産するための方法およびリアクタ |
JP2010502542A (ja) * | 2006-08-30 | 2010-01-28 | ヘムロック・セミコンダクター・コーポレーション | シーメンスタイププロセスに組み込まれた流動床反応器によるシリコンの製造 |
JP2013500927A (ja) * | 2009-08-04 | 2013-01-10 | シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング | モノシランを製造するための設備および方法 |
JP2013540095A (ja) * | 2010-10-22 | 2013-10-31 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 実質的に閉ループの方法およびシステムにおける多結晶シリコンの製造 |
CN108883942A (zh) * | 2016-04-21 | 2018-11-23 | 株式会社德山 | 金属粉末的制造方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4676967A (en) * | 1978-08-23 | 1987-06-30 | Union Carbide Corporation | High purity silane and silicon production |
US4374182A (en) * | 1980-07-07 | 1983-02-15 | Dow Corning Corporation | Preparation of silicon metal through polymer degradation |
US4390510A (en) | 1982-02-16 | 1983-06-28 | General Electric Company | Process for treating spent silicon-containing reaction masses to produce halosilanes |
JPS61101410A (ja) * | 1984-10-24 | 1986-05-20 | Hiroshi Ishizuka | 多結晶珪素の製造法及びそのための装置 |
US4696834A (en) * | 1986-02-28 | 1987-09-29 | Dow Corning Corporation | Silicon-containing coatings and a method for their preparation |
US4743344A (en) * | 1986-03-26 | 1988-05-10 | Union Carbide Corporation | Treatment of wastes from high purity silicon process |
US4871524A (en) * | 1987-09-03 | 1989-10-03 | Ethyl Corporation | Hydrogen purification process |
WO2007120871A2 (en) * | 2006-04-13 | 2007-10-25 | Cabot Corporation | Production of silicon through a closed-loop process |
US7656661B2 (en) * | 2007-07-31 | 2010-02-02 | Donald Shaum | Electronic apparatus with multiple data input modes |
DE102008017304A1 (de) | 2008-03-31 | 2009-10-01 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Herstellung von Reinstsilizium |
DE102009032833A1 (de) | 2009-07-08 | 2011-01-13 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Herstellung von Monosilan |
DE102009037155B3 (de) | 2009-08-04 | 2010-11-04 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Herstellung von Trichlorsilan |
DE102010000981A1 (de) | 2010-01-18 | 2011-07-21 | Evonik Degussa GmbH, 45128 | Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium |
DE102010034469A1 (de) | 2010-08-06 | 2012-02-09 | Schmid Silicon Technology Gmbh | Anlage zur Herstellung von Monosilan |
US20120100061A1 (en) | 2010-10-22 | 2012-04-26 | Memc Electronic Materials, Inc. | Production of Polycrystalline Silicon in Substantially Closed-loop Processes |
US8449848B2 (en) | 2010-10-22 | 2013-05-28 | Memc Electronic Materials, Inc. | Production of polycrystalline silicon in substantially closed-loop systems |
DE102011089695A1 (de) | 2011-12-22 | 2013-06-27 | Schmid Silicon Technology Gmbh | Reaktor und Verfahren zur Herstellung von Reinstsilizium |
DE102015203618A1 (de) | 2015-02-27 | 2016-09-01 | Schmid Silicon Technology Gmbh | Kolonne und Verfahren zur Disproportionierung von Chlorsilanen zu Monosilan und Tetrachlorsilan sowie Anlage zur Gewinnung von Monosilan |
DE102015209008A1 (de) | 2015-05-15 | 2016-11-17 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Zersetzung von Monosilan |
DE102019209898A1 (de) | 2019-07-04 | 2021-01-07 | Schmid Silicon Technology Gmbh | Vorrichtung und Verfahren zur Bildung von flüssigem Silizium |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2943918A (en) * | 1956-02-11 | 1960-07-05 | Pechiney Prod Chimiques Sa | Process for manufacturing dense, extra pure silicon |
JPS50155423A (ja) * | 1974-05-13 | 1975-12-15 | ||
JPS52136831A (en) * | 1976-05-11 | 1977-11-15 | Wacker Chemitronic | Producing method of high purity silicon |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2595620A (en) * | 1948-11-27 | 1952-05-06 | Union Carbide & Carbon Corp | Hydrogenation of halogenosilanes |
NL231067A (ja) * | 1957-09-07 | |||
US3012861A (en) * | 1960-01-15 | 1961-12-12 | Du Pont | Production of silicon |
US4117094A (en) * | 1977-06-13 | 1978-09-26 | Texas Instruments Incorporated | Process for silicon and trichlorosilane production |
-
1979
- 1979-05-04 GB GB7915583A patent/GB2028289B/en not_active Expired
- 1979-05-11 DE DE2919086A patent/DE2919086C2/de not_active Expired
- 1979-05-11 DE DE2954368A patent/DE2954368C2/de not_active Expired
- 1979-05-15 CA CA000327660A patent/CA1145117A/en not_active Expired
- 1979-05-16 FR FR7912469A patent/FR2433479B1/fr not_active Expired
- 1979-05-17 JP JP5980079A patent/JPS5527890A/ja active Granted
- 1979-05-17 IT IT22753/79A patent/IT1193203B/it active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2943918A (en) * | 1956-02-11 | 1960-07-05 | Pechiney Prod Chimiques Sa | Process for manufacturing dense, extra pure silicon |
JPS50155423A (ja) * | 1974-05-13 | 1975-12-15 | ||
JPS52136831A (en) * | 1976-05-11 | 1977-11-15 | Wacker Chemitronic | Producing method of high purity silicon |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008506621A (ja) * | 2004-07-16 | 2008-03-06 | インスティチュート フォー エネルギーテックニック | 半導体級(seg)シリコンを連続生産するための方法およびリアクタ |
JP2010502542A (ja) * | 2006-08-30 | 2010-01-28 | ヘムロック・セミコンダクター・コーポレーション | シーメンスタイププロセスに組み込まれた流動床反応器によるシリコンの製造 |
JP2013500927A (ja) * | 2009-08-04 | 2013-01-10 | シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング | モノシランを製造するための設備および方法 |
JP2013540095A (ja) * | 2010-10-22 | 2013-10-31 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 実質的に閉ループの方法およびシステムにおける多結晶シリコンの製造 |
CN108883942A (zh) * | 2016-04-21 | 2018-11-23 | 株式会社德山 | 金属粉末的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
GB2028289B (en) | 1982-09-02 |
FR2433479A1 (fr) | 1980-03-14 |
CA1145117A (en) | 1983-04-26 |
IT1193203B (it) | 1988-06-15 |
DE2954368A1 (ja) | 1984-07-12 |
FR2433479B1 (fr) | 1985-10-18 |
DE2919086A1 (de) | 1980-03-06 |
DE2954368C2 (de) | 1986-10-16 |
GB2028289A (en) | 1980-03-05 |
IT7922753A0 (it) | 1979-05-17 |
DE2919086C2 (de) | 1986-10-16 |
JPS6228083B2 (ja) | 1987-06-18 |
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