FR2433479A1 - Procede de production de silicium polycristallin - Google Patents

Procede de production de silicium polycristallin

Info

Publication number
FR2433479A1
FR2433479A1 FR7912469A FR7912469A FR2433479A1 FR 2433479 A1 FR2433479 A1 FR 2433479A1 FR 7912469 A FR7912469 A FR 7912469A FR 7912469 A FR7912469 A FR 7912469A FR 2433479 A1 FR2433479 A1 FR 2433479A1
Authority
FR
France
Prior art keywords
condenser
separator
polycrystalline silicon
reactor
producing polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7912469A
Other languages
English (en)
Other versions
FR2433479B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JC Schumacher Co
Original Assignee
JC Schumacher Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JC Schumacher Co filed Critical JC Schumacher Co
Publication of FR2433479A1 publication Critical patent/FR2433479A1/fr
Application granted granted Critical
Publication of FR2433479B1 publication Critical patent/FR2433479B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon

Abstract

L'invention concerne un procédé de production de silicium de très grande pureté. Selon l'invention, on décompose thermiquement du trihalosilane dans une gamme de températures sensiblement de 600 à 800 degrés C pour produire du silicium ultra-pur de qualité semi-conducteur ; l'installation utilisée comporte un réacteur 10, un condenseur 14, un séparateur 16, un raffineur 18, un réservoir tampon 20, un condenseur 22, un séparateur 24, un vaporiseur 26, un réacteur 28, un condenseur 30, un séparateur 32, un filtre au charbon activé 34, un compresseur 36, et un éjecteur de mélange 38. L'invention s'applique notamment à l'industrie des semi-conducteurs.
FR7912469A 1978-08-18 1979-05-16 Procede de production de silicium polycristallin Expired FR2433479B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93500978A 1978-08-18 1978-08-18

Publications (2)

Publication Number Publication Date
FR2433479A1 true FR2433479A1 (fr) 1980-03-14
FR2433479B1 FR2433479B1 (fr) 1985-10-18

Family

ID=25466438

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7912469A Expired FR2433479B1 (fr) 1978-08-18 1979-05-16 Procede de production de silicium polycristallin

Country Status (6)

Country Link
JP (1) JPS5527890A (fr)
CA (1) CA1145117A (fr)
DE (2) DE2919086C2 (fr)
FR (1) FR2433479B1 (fr)
GB (1) GB2028289B (fr)
IT (1) IT1193203B (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4676967A (en) * 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
US4374182A (en) * 1980-07-07 1983-02-15 Dow Corning Corporation Preparation of silicon metal through polymer degradation
US4390510A (en) 1982-02-16 1983-06-28 General Electric Company Process for treating spent silicon-containing reaction masses to produce halosilanes
JPS61101410A (ja) * 1984-10-24 1986-05-20 Hiroshi Ishizuka 多結晶珪素の製造法及びそのための装置
US4696834A (en) * 1986-02-28 1987-09-29 Dow Corning Corporation Silicon-containing coatings and a method for their preparation
US4743344A (en) * 1986-03-26 1988-05-10 Union Carbide Corporation Treatment of wastes from high purity silicon process
US4871524A (en) * 1987-09-03 1989-10-03 Ethyl Corporation Hydrogen purification process
JP2008506621A (ja) * 2004-07-16 2008-03-06 インスティチュート フォー エネルギーテックニック 半導体級（ｓｅｇ）シリコンを連続生産するための方法およびリアクタ
WO2007120871A2 (fr) * 2006-04-13 2007-10-25 Cabot Corporation Production de silicium selon un procédé en boucle fermée
US7935327B2 (en) * 2006-08-30 2011-05-03 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor integrated into a siemens-type process
US7656661B2 (en) * 2007-07-31 2010-02-02 Donald Shaum Electronic apparatus with multiple data input modes
DE102008017304A1 (de) 2008-03-31 2009-10-01 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Herstellung von Reinstsilizium
DE102009032833A1 (de) 2009-07-08 2011-01-13 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Herstellung von Monosilan
DE102009037154B3 (de) 2009-08-04 2010-12-09 Schmid Silicon Technology Gmbh Verfahren zur Herstellung von Monosilan
DE102009037155B3 (de) 2009-08-04 2010-11-04 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Herstellung von Trichlorsilan
DE102010000981A1 (de) 2010-01-18 2011-07-21 Evonik Degussa GmbH, 45128 Closed loop-Verfahren zur Herstellung von Trichlorsilan aus metallurgischem Silicium
DE102010034469A1 (de) 2010-08-06 2012-02-09 Schmid Silicon Technology Gmbh Anlage zur Herstellung von Monosilan
US20120100061A1 (en) 2010-10-22 2012-04-26 Memc Electronic Materials, Inc. Production of Polycrystalline Silicon in Substantially Closed-loop Processes
JP5946835B2 (ja) * 2010-10-22 2016-07-06 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドＭｅｍｃ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 実質的に閉ループの方法およびシステムにおける多結晶シリコンの製造
US8449848B2 (en) 2010-10-22 2013-05-28 Memc Electronic Materials, Inc. Production of polycrystalline silicon in substantially closed-loop systems
DE102011089695A1 (de) 2011-12-22 2013-06-27 Schmid Silicon Technology Gmbh Reaktor und Verfahren zur Herstellung von Reinstsilizium
DE102015203618A1 (de) 2015-02-27 2016-09-01 Schmid Silicon Technology Gmbh Kolonne und Verfahren zur Disproportionierung von Chlorsilanen zu Monosilan und Tetrachlorsilan sowie Anlage zur Gewinnung von Monosilan
DE102015209008A1 (de) 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Zersetzung von Monosilan
US10953469B2 (en) * 2016-04-21 2021-03-23 Tokuyama Corporation Method of producing metal powder
DE102019209898A1 (de) 2019-07-04 2021-01-07 Schmid Silicon Technology Gmbh Vorrichtung und Verfahren zur Bildung von flüssigem Silizium

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2595620A (en) * 1948-11-27 1952-05-06 Union Carbide & Carbon Corp Hydrogenation of halogenosilanes
US3012861A (en) * 1960-01-15 1961-12-12 Du Pont Production of silicon
US4117094A (en) * 1977-06-13 1978-09-26 Texas Instruments Incorporated Process for silicon and trichlorosilane production

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1054436B (de) * 1956-02-11 1959-04-09 Pechiney Prod Chimiques Sa Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades
NL231067A (fr) * 1957-09-07
GB1498266A (en) * 1974-05-13 1978-01-18 Texas Instruments Inc Method of silicon production
DE2620739A1 (de) * 1976-05-11 1977-12-01 Wacker Chemitronic Verfahren zur herstellung von hochreinem silicium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2595620A (en) * 1948-11-27 1952-05-06 Union Carbide & Carbon Corp Hydrogenation of halogenosilanes
US3012861A (en) * 1960-01-15 1961-12-12 Du Pont Production of silicon
US4117094A (en) * 1977-06-13 1978-09-26 Texas Instruments Incorporated Process for silicon and trichlorosilane production

Also Published As

Publication number Publication date
GB2028289B (en) 1982-09-02
CA1145117A (fr) 1983-04-26
IT1193203B (it) 1988-06-15
DE2954368A1 (fr) 1984-07-12
FR2433479B1 (fr) 1985-10-18
DE2919086A1 (de) 1980-03-06
DE2954368C2 (de) 1986-10-16
GB2028289A (en) 1980-03-05
IT7922753A0 (it) 1979-05-17
JPS5527890A (en) 1980-02-28
DE2919086C2 (de) 1986-10-16
JPS6228083B2 (fr) 1987-06-18

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