JPS5527618A - Planar diode - Google Patents
Planar diodeInfo
- Publication number
- JPS5527618A JPS5527618A JP10055878A JP10055878A JPS5527618A JP S5527618 A JPS5527618 A JP S5527618A JP 10055878 A JP10055878 A JP 10055878A JP 10055878 A JP10055878 A JP 10055878A JP S5527618 A JPS5527618 A JP S5527618A
- Authority
- JP
- Japan
- Prior art keywords
- type region
- breakdown
- uniformly
- resistance
- planar diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015556 catabolic process Effects 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having localised breakdown regions, e.g. built-in avalanching regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10055878A JPS5527618A (en) | 1978-08-17 | 1978-08-17 | Planar diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10055878A JPS5527618A (en) | 1978-08-17 | 1978-08-17 | Planar diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5527618A true JPS5527618A (en) | 1980-02-27 |
| JPS6153877B2 JPS6153877B2 (enrdf_load_stackoverflow) | 1986-11-19 |
Family
ID=14277253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10055878A Granted JPS5527618A (en) | 1978-08-17 | 1978-08-17 | Planar diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5527618A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6094780A (ja) * | 1983-10-28 | 1985-05-27 | Hitachi Ltd | 定電圧ダイオ−ド |
| JPS61228677A (ja) * | 1985-04-01 | 1986-10-11 | Rohm Co Ltd | 半導体装置 |
| JPH01290259A (ja) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | 半導体装置 |
| JPH0288753A (ja) * | 1988-09-27 | 1990-03-28 | Natl Res Inst For Metals | 溶融めっきアルミニウム |
| JPH02111078A (ja) * | 1988-10-20 | 1990-04-24 | Matsushita Electron Corp | 半導体装置 |
| JP2006222213A (ja) * | 2005-02-09 | 2006-08-24 | Matsushita Electric Ind Co Ltd | サージ保護用半導体素子およびその製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63131080U (enrdf_load_stackoverflow) * | 1987-02-20 | 1988-08-26 |
-
1978
- 1978-08-17 JP JP10055878A patent/JPS5527618A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6094780A (ja) * | 1983-10-28 | 1985-05-27 | Hitachi Ltd | 定電圧ダイオ−ド |
| JPS61228677A (ja) * | 1985-04-01 | 1986-10-11 | Rohm Co Ltd | 半導体装置 |
| JPH01290259A (ja) * | 1988-05-18 | 1989-11-22 | Fuji Electric Co Ltd | 半導体装置 |
| JPH0288753A (ja) * | 1988-09-27 | 1990-03-28 | Natl Res Inst For Metals | 溶融めっきアルミニウム |
| JPH02111078A (ja) * | 1988-10-20 | 1990-04-24 | Matsushita Electron Corp | 半導体装置 |
| JP2006222213A (ja) * | 2005-02-09 | 2006-08-24 | Matsushita Electric Ind Co Ltd | サージ保護用半導体素子およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6153877B2 (enrdf_load_stackoverflow) | 1986-11-19 |
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