JPS5526690A - Manufacturing semiconductor device - Google Patents
Manufacturing semiconductor deviceInfo
- Publication number
- JPS5526690A JPS5526690A JP10031878A JP10031878A JPS5526690A JP S5526690 A JPS5526690 A JP S5526690A JP 10031878 A JP10031878 A JP 10031878A JP 10031878 A JP10031878 A JP 10031878A JP S5526690 A JPS5526690 A JP S5526690A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- width
- slot
- etch
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent an erosion of an electrode metal by covering the side face of a collector electrode with a slot having the width longer than an etch cut to be etch-cut, in forming a semiconductor element having an inverse beveled construction by the etch-cutting.
CONSTITUTION: Electrodes 3, 4 and 2 for an emitter region E, base region B, and collector region C are formed in a semiconductor wafer 1. Subsequently, a wax 6 is coated onto the face wherein the electrode 3 and 4 are mounted to contact the face on a plan plate jig 7, and a slot 8 is formed by operating a dicing saw from the electrode 2 to the wafer interior 1. in this case, the width of the slot 8 is measured wider than the length obtained by an etch cut to leave an electrode 2a with a desirable width and becoms deeper than a thickness of the electrode 2a in the range that it will not reach a collector-base junction. Thereafter, the electrode 2a is covered with a wax 9 so that the etching width becomes narrower than the width of the slot 8 and is impregnated in the etching solution until it will be diveded into several pellets to establish a beveled construction.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10031878A JPS5526690A (en) | 1978-08-16 | 1978-08-16 | Manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10031878A JPS5526690A (en) | 1978-08-16 | 1978-08-16 | Manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5526690A true JPS5526690A (en) | 1980-02-26 |
Family
ID=14270829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10031878A Pending JPS5526690A (en) | 1978-08-16 | 1978-08-16 | Manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5526690A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002538627A (en) * | 1999-02-26 | 2002-11-12 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Multilayer diode and method for manufacturing the multilayer diode |
-
1978
- 1978-08-16 JP JP10031878A patent/JPS5526690A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002538627A (en) * | 1999-02-26 | 2002-11-12 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Multilayer diode and method for manufacturing the multilayer diode |
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