JPS5524419A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5524419A
JPS5524419A JP9666978A JP9666978A JPS5524419A JP S5524419 A JPS5524419 A JP S5524419A JP 9666978 A JP9666978 A JP 9666978A JP 9666978 A JP9666978 A JP 9666978A JP S5524419 A JPS5524419 A JP S5524419A
Authority
JP
Japan
Prior art keywords
electrode
source
field effect
effect transistor
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9666978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6252474B2 (enrdf_load_stackoverflow
Inventor
Kyozo Shimizu
Kazumasa Onodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP9666978A priority Critical patent/JPS5524419A/ja
Publication of JPS5524419A publication Critical patent/JPS5524419A/ja
Publication of JPS6252474B2 publication Critical patent/JPS6252474B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP9666978A 1978-08-10 1978-08-10 Insulated gate type field effect transistor Granted JPS5524419A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9666978A JPS5524419A (en) 1978-08-10 1978-08-10 Insulated gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9666978A JPS5524419A (en) 1978-08-10 1978-08-10 Insulated gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5524419A true JPS5524419A (en) 1980-02-21
JPS6252474B2 JPS6252474B2 (enrdf_load_stackoverflow) 1987-11-05

Family

ID=14171204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9666978A Granted JPS5524419A (en) 1978-08-10 1978-08-10 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5524419A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178372A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Insulating gate field-effect transistor and its manufacture
JPS6110278A (ja) * 1984-06-26 1986-01-17 Nec Corp Mos型半導体装置及びその製造方法
US4616399A (en) * 1983-04-11 1986-10-14 Nec Corporation Method of manufacturing an insulated gate field effect transistor
JPH01221241A (ja) * 1988-02-29 1989-09-04 Mitsubishi Plastics Ind Ltd 印刷積層包材

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57178372A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Insulating gate field-effect transistor and its manufacture
US4616399A (en) * 1983-04-11 1986-10-14 Nec Corporation Method of manufacturing an insulated gate field effect transistor
JPS6110278A (ja) * 1984-06-26 1986-01-17 Nec Corp Mos型半導体装置及びその製造方法
JPH01221241A (ja) * 1988-02-29 1989-09-04 Mitsubishi Plastics Ind Ltd 印刷積層包材

Also Published As

Publication number Publication date
JPS6252474B2 (enrdf_load_stackoverflow) 1987-11-05

Similar Documents

Publication Publication Date Title
JPS5673473A (en) Manufacture of semiconductor element
JPS56125868A (en) Thin-film semiconductor device
JPS5524419A (en) Insulated gate type field effect transistor
GB2016803A (en) Thin film transistor construction and manufacturing method of the same
JPS57176767A (en) Manufacture of semiconductor device
JPS5773974A (en) Manufacture of most type semiconductor device
JPS5534492A (en) Semiconductor integrated circuit device having mis field effect type transistor and its manufacture
JPS5795658A (en) Manufacture of semiconductor device
JPS5643768A (en) Fet transistor and method of producing the same
JPS55120170A (en) Mos type semiconductor device
JPS5756973A (en) Manufacture of insulated gate type field effect transistor
JPS5587479A (en) Insulated gate type field effect transistor
JPS56111264A (en) Manufacture of semiconductor device
JPS57190362A (en) Semiconductor device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS56133844A (en) Semiconductor device
JPS5359377A (en) Insulating gate type electric field effect semiconductor unit and itsproduction
JPS5513951A (en) Manufacturing method of semiconductor device
JPS56140664A (en) Semiconductor device and manufacture
JPS5470767A (en) Manufacture of semiconductor device
JPS5710265A (en) Field effect transistor
JPS5734368A (en) Protective diode for insulated gate field-effect transistor
JPS56161673A (en) Semiconductor device and manufacture thereof
JPS5721866A (en) Manufacture of insulated gate type field effect transistor
JPS5587486A (en) Mis type semiconductor device