JPS5524419A - Insulated gate type field effect transistor - Google Patents
Insulated gate type field effect transistorInfo
- Publication number
- JPS5524419A JPS5524419A JP9666978A JP9666978A JPS5524419A JP S5524419 A JPS5524419 A JP S5524419A JP 9666978 A JP9666978 A JP 9666978A JP 9666978 A JP9666978 A JP 9666978A JP S5524419 A JPS5524419 A JP S5524419A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- source
- field effect
- effect transistor
- type field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9666978A JPS5524419A (en) | 1978-08-10 | 1978-08-10 | Insulated gate type field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9666978A JPS5524419A (en) | 1978-08-10 | 1978-08-10 | Insulated gate type field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5524419A true JPS5524419A (en) | 1980-02-21 |
JPS6252474B2 JPS6252474B2 (enrdf_load_stackoverflow) | 1987-11-05 |
Family
ID=14171204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9666978A Granted JPS5524419A (en) | 1978-08-10 | 1978-08-10 | Insulated gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5524419A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57178372A (en) * | 1981-04-27 | 1982-11-02 | Sumitomo Electric Ind Ltd | Insulating gate field-effect transistor and its manufacture |
JPS6110278A (ja) * | 1984-06-26 | 1986-01-17 | Nec Corp | Mos型半導体装置及びその製造方法 |
US4616399A (en) * | 1983-04-11 | 1986-10-14 | Nec Corporation | Method of manufacturing an insulated gate field effect transistor |
JPH01221241A (ja) * | 1988-02-29 | 1989-09-04 | Mitsubishi Plastics Ind Ltd | 印刷積層包材 |
-
1978
- 1978-08-10 JP JP9666978A patent/JPS5524419A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57178372A (en) * | 1981-04-27 | 1982-11-02 | Sumitomo Electric Ind Ltd | Insulating gate field-effect transistor and its manufacture |
US4616399A (en) * | 1983-04-11 | 1986-10-14 | Nec Corporation | Method of manufacturing an insulated gate field effect transistor |
JPS6110278A (ja) * | 1984-06-26 | 1986-01-17 | Nec Corp | Mos型半導体装置及びその製造方法 |
JPH01221241A (ja) * | 1988-02-29 | 1989-09-04 | Mitsubishi Plastics Ind Ltd | 印刷積層包材 |
Also Published As
Publication number | Publication date |
---|---|
JPS6252474B2 (enrdf_load_stackoverflow) | 1987-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5673473A (en) | Manufacture of semiconductor element | |
JPS56125868A (en) | Thin-film semiconductor device | |
JPS5524419A (en) | Insulated gate type field effect transistor | |
GB2016803A (en) | Thin film transistor construction and manufacturing method of the same | |
JPS57176767A (en) | Manufacture of semiconductor device | |
JPS5773974A (en) | Manufacture of most type semiconductor device | |
JPS5534492A (en) | Semiconductor integrated circuit device having mis field effect type transistor and its manufacture | |
JPS5795658A (en) | Manufacture of semiconductor device | |
JPS5643768A (en) | Fet transistor and method of producing the same | |
JPS55120170A (en) | Mos type semiconductor device | |
JPS5756973A (en) | Manufacture of insulated gate type field effect transistor | |
JPS5587479A (en) | Insulated gate type field effect transistor | |
JPS56111264A (en) | Manufacture of semiconductor device | |
JPS57190362A (en) | Semiconductor device | |
JPS57128957A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS56133844A (en) | Semiconductor device | |
JPS5359377A (en) | Insulating gate type electric field effect semiconductor unit and itsproduction | |
JPS5513951A (en) | Manufacturing method of semiconductor device | |
JPS56140664A (en) | Semiconductor device and manufacture | |
JPS5470767A (en) | Manufacture of semiconductor device | |
JPS5710265A (en) | Field effect transistor | |
JPS5734368A (en) | Protective diode for insulated gate field-effect transistor | |
JPS56161673A (en) | Semiconductor device and manufacture thereof | |
JPS5721866A (en) | Manufacture of insulated gate type field effect transistor | |
JPS5587486A (en) | Mis type semiconductor device |