JPS5795658A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5795658A
JPS5795658A JP55171606A JP17160680A JPS5795658A JP S5795658 A JPS5795658 A JP S5795658A JP 55171606 A JP55171606 A JP 55171606A JP 17160680 A JP17160680 A JP 17160680A JP S5795658 A JPS5795658 A JP S5795658A
Authority
JP
Japan
Prior art keywords
oxidized film
poly
capacitor
increased
withstand voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55171606A
Other languages
Japanese (ja)
Other versions
JPS625344B2 (en
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55171606A priority Critical patent/JPS5795658A/en
Publication of JPS5795658A publication Critical patent/JPS5795658A/en
Publication of JPS625344B2 publication Critical patent/JPS625344B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a desired capacitor by a method wherein a thermal oxidized film nondoped, consisting of poly Si is formed on a capacitive dielectric when a gate for MOSFET is oxidezed, a crystalization of the poly Si is improved by a laser annealing and a withstand voltage of the thermal oxidized film is increased. CONSTITUTION:A poly Si 14 nondoped is covered over a field oxidized film 11 and an oxidized film 13. A lower electrode 14' is formed by a patterning through a laser annealing (it is omitted at a low withstand voltage). A gate oxidized film 15 and a capacitive oxidized film 15' are at the same time formed by removing the oxidized film 13. An ion is selectively injected into the electrode 14' by providing a resist mask 16. A gate electrode 17 and an upper electrode 17' of a capacitor constituted by the poly Si are formed by removing the resist mask 16. The oxidized films 15 and 15' etched by using the electrodes 17, 17' for the mask are doped onto the electrodes 17 and 17'. According to the constitution, the MOSFET and capacitor can be formed by a slightly added processes, the withstand voltage of the capacitor is increased and also an accuracy is increased.
JP55171606A 1980-12-05 1980-12-05 Manufacture of semiconductor device Granted JPS5795658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55171606A JPS5795658A (en) 1980-12-05 1980-12-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171606A JPS5795658A (en) 1980-12-05 1980-12-05 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5795658A true JPS5795658A (en) 1982-06-14
JPS625344B2 JPS625344B2 (en) 1987-02-04

Family

ID=15926275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171606A Granted JPS5795658A (en) 1980-12-05 1980-12-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5795658A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846666A (en) * 1981-09-14 1983-03-18 Seiko Epson Corp Manufacture of semiconductor device
JPS61226951A (en) * 1985-04-01 1986-10-08 Hitachi Ltd Capacitor
JPS62264645A (en) * 1986-05-13 1987-11-17 Fujitsu Ltd Manufacture of semiconductor device
EP0875925A2 (en) * 1997-04-30 1998-11-04 Samsung Electronics Co., Ltd. Method of manufacturing capacitors in integrated circuits

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846666A (en) * 1981-09-14 1983-03-18 Seiko Epson Corp Manufacture of semiconductor device
JPH0454385B2 (en) * 1981-09-14 1992-08-31 Seiko Epson Corp
JPS61226951A (en) * 1985-04-01 1986-10-08 Hitachi Ltd Capacitor
JPS62264645A (en) * 1986-05-13 1987-11-17 Fujitsu Ltd Manufacture of semiconductor device
EP0875925A2 (en) * 1997-04-30 1998-11-04 Samsung Electronics Co., Ltd. Method of manufacturing capacitors in integrated circuits
EP0875925A3 (en) * 1997-04-30 2000-12-27 Samsung Electronics Co., Ltd. Method of manufacturing capacitors in integrated circuits

Also Published As

Publication number Publication date
JPS625344B2 (en) 1987-02-04

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