JPS55165676A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55165676A
JPS55165676A JP7290379A JP7290379A JPS55165676A JP S55165676 A JPS55165676 A JP S55165676A JP 7290379 A JP7290379 A JP 7290379A JP 7290379 A JP7290379 A JP 7290379A JP S55165676 A JPS55165676 A JP S55165676A
Authority
JP
Japan
Prior art keywords
layer
gate
region
type
comb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7290379A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152585B2 (enExample
Inventor
Tetsuo Sueoka
Satoshi Ishibashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP7290379A priority Critical patent/JPS55165676A/ja
Publication of JPS55165676A publication Critical patent/JPS55165676A/ja
Publication of JPS6152585B2 publication Critical patent/JPS6152585B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP7290379A 1979-06-09 1979-06-09 Semiconductor device Granted JPS55165676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7290379A JPS55165676A (en) 1979-06-09 1979-06-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7290379A JPS55165676A (en) 1979-06-09 1979-06-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55165676A true JPS55165676A (en) 1980-12-24
JPS6152585B2 JPS6152585B2 (enExample) 1986-11-13

Family

ID=13502763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7290379A Granted JPS55165676A (en) 1979-06-09 1979-06-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55165676A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03127021U (enExample) * 1990-04-02 1991-12-20

Also Published As

Publication number Publication date
JPS6152585B2 (enExample) 1986-11-13

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