JPS5516459A - Taper etching method - Google Patents

Taper etching method

Info

Publication number
JPS5516459A
JPS5516459A JP8955878A JP8955878A JPS5516459A JP S5516459 A JPS5516459 A JP S5516459A JP 8955878 A JP8955878 A JP 8955878A JP 8955878 A JP8955878 A JP 8955878A JP S5516459 A JPS5516459 A JP S5516459A
Authority
JP
Japan
Prior art keywords
etching
layer
pattern
ion beam
placed beyond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8955878A
Other languages
Japanese (ja)
Other versions
JPS63944B2 (en
Inventor
Hiroshi Gokan
Yoshimasa Kato
Sotaro Edokoro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8955878A priority Critical patent/JPS5516459A/en
Publication of JPS5516459A publication Critical patent/JPS5516459A/en
Publication of JPS63944B2 publication Critical patent/JPS63944B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To improve the controllability of a taper angle of a fine pattern by forming a resist mask pattern placed beyond an etching layer on an etched layer, and then by irradiating an ion beam from an oblique direction while rotating within the plane.
CONSTITUTION: After forming a resist mask pattern 3 placed beyond an etching control layer 8 on an etched layer 7, etching is effected by irradiating an ion beam from an oblique direction against a normal line while rotating within the plane. For example, a three layer of Ti/Au/Ti, 100Å, 6000Å, 1100Å thick respectively, is electron-beam evaporated on a GGG bubble material substrate 1 placed beyond an Al2O3 spacer, and then a thin 1 μm resist pattern 3 is formed. After this is rotated at a rate of about 3 r.p.m. the tape angle α=about 40° of an Au pattern 7 is obtained by effecting an ion beam etching of oblique incidence of which angle is 30°.
COPYRIGHT: (C)1980,JPO&Japio
JP8955878A 1978-07-21 1978-07-21 Taper etching method Granted JPS5516459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8955878A JPS5516459A (en) 1978-07-21 1978-07-21 Taper etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8955878A JPS5516459A (en) 1978-07-21 1978-07-21 Taper etching method

Publications (2)

Publication Number Publication Date
JPS5516459A true JPS5516459A (en) 1980-02-05
JPS63944B2 JPS63944B2 (en) 1988-01-09

Family

ID=13974141

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8955878A Granted JPS5516459A (en) 1978-07-21 1978-07-21 Taper etching method

Country Status (1)

Country Link
JP (1) JPS5516459A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105655231A (en) * 2014-11-13 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 Etching mask group and substrate etching method applying same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1007908A3 (en) * 1993-12-24 1995-11-14 Philips Electronics Nv An image display device WITH AND deflection unit deflection unit for a display device.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105655231A (en) * 2014-11-13 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 Etching mask group and substrate etching method applying same

Also Published As

Publication number Publication date
JPS63944B2 (en) 1988-01-09

Similar Documents

Publication Publication Date Title
JPS5655571A (en) Fine pattern forming method of aluminum film or aluminum alloy film
US4396479A (en) Ion etching process with minimized redeposition
JPS561533A (en) Method of photoetching
JPS5516459A (en) Taper etching method
JPS5742151A (en) Formation of pattern
JP2620952B2 (en) Fine pattern forming method
JPS56105637A (en) Formation of pattern
JPS5539647A (en) Ion etching
JPS5539646A (en) Ion taper etching
JPS5539645A (en) Dry taper etching
JPS56115534A (en) Formation of pattern
JPS5496371A (en) Mask forming method
JPS5685813A (en) Manufacture of magnetic bubble element
JPS5619045A (en) Electron beam sensitive inorganic resist
JPS5666038A (en) Formation of micro-pattern
JPS58123711A (en) Preparation of magnetic bubble memory element
JPS53105982A (en) Micropattern formation method
JPS5326575A (en) Ion etching method
JPS5673435A (en) Manufacture of semiconductor device
JPS5773923A (en) Preparation of magnetic bubble memory element
JPS5740958A (en) Formation of wiring pattern
JPS56159890A (en) Bubble magnetic domain element
JPS5718113A (en) Manufacture of elastic surface wave lattice type transducer
JPS5553421A (en) Composite mask for ion etching
EP0308902A3 (en) Method for forming pattern by using langmuir-blodgett film