JPS55163843A - Method for electron beam exposure - Google Patents

Method for electron beam exposure

Info

Publication number
JPS55163843A
JPS55163843A JP7208879A JP7208879A JPS55163843A JP S55163843 A JPS55163843 A JP S55163843A JP 7208879 A JP7208879 A JP 7208879A JP 7208879 A JP7208879 A JP 7208879A JP S55163843 A JPS55163843 A JP S55163843A
Authority
JP
Japan
Prior art keywords
electron beam
information
pattern
exposed
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7208879A
Other languages
Japanese (ja)
Other versions
JPS5722414B2 (en
Inventor
Seigo Igaki
Yoshiaki Goto
Yasuo Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7208879A priority Critical patent/JPS55163843A/en
Priority to PCT/JP1980/000125 priority patent/WO1980002772A1/en
Priority to US06/233,599 priority patent/US4484077A/en
Priority to DE8080901043T priority patent/DE3069060D1/en
Priority to EP19800901043 priority patent/EP0029857B1/en
Publication of JPS55163843A publication Critical patent/JPS55163843A/en
Publication of JPS5722414B2 publication Critical patent/JPS5722414B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To reduce the data required for transfer by changing an exposed shape to a simplified one, memorizing as an electron beam ''on'' information, and also by deflecting the direction of an exposure beam with the said information. CONSTITUTION:A processor CPU reads out the required data from the pattern package data stored in a memory DKM and the ''on-off'' information of an electron beam for the shape to be exposed is memorized in a pattern package memory PPM through a time series. An electron beam direction deflecting signal, through a digital-analogue converter DAC and a deflection amplifier DAP, and an electron beam ''on-off'' signal, through a beam blanking driver BBD, are sent to a deflector and a blanker respectively from a pattern generation controller PGC, having the information for the pattern to be drawn and a coordinate etc.
JP7208879A 1979-06-08 1979-06-08 Method for electron beam exposure Granted JPS55163843A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP7208879A JPS55163843A (en) 1979-06-08 1979-06-08 Method for electron beam exposure
PCT/JP1980/000125 WO1980002772A1 (en) 1979-06-08 1980-06-06 Electron beam projecting system
US06/233,599 US4484077A (en) 1979-06-08 1980-06-06 Exposure system and method using an electron beam
DE8080901043T DE3069060D1 (en) 1979-06-08 1980-06-06 Electron beam projecting system
EP19800901043 EP0029857B1 (en) 1979-06-08 1980-12-15 Electron beam projecting system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7208879A JPS55163843A (en) 1979-06-08 1979-06-08 Method for electron beam exposure

Publications (2)

Publication Number Publication Date
JPS55163843A true JPS55163843A (en) 1980-12-20
JPS5722414B2 JPS5722414B2 (en) 1982-05-13

Family

ID=13479291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7208879A Granted JPS55163843A (en) 1979-06-08 1979-06-08 Method for electron beam exposure

Country Status (1)

Country Link
JP (1) JPS55163843A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0290608A (en) * 1988-09-28 1990-03-30 Toshiba Corp Electron beam lithography equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0290608A (en) * 1988-09-28 1990-03-30 Toshiba Corp Electron beam lithography equipment

Also Published As

Publication number Publication date
JPS5722414B2 (en) 1982-05-13

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