JPS54145479A - Electron-beam exposure unit - Google Patents

Electron-beam exposure unit

Info

Publication number
JPS54145479A
JPS54145479A JP5377578A JP5377578A JPS54145479A JP S54145479 A JPS54145479 A JP S54145479A JP 5377578 A JP5377578 A JP 5377578A JP 5377578 A JP5377578 A JP 5377578A JP S54145479 A JPS54145479 A JP S54145479A
Authority
JP
Japan
Prior art keywords
electron
stage
deflection
beam system
difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5377578A
Other languages
Japanese (ja)
Other versions
JPS6212656B2 (en
Inventor
Kenichi Kawashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5377578A priority Critical patent/JPS54145479A/en
Publication of JPS54145479A publication Critical patent/JPS54145479A/en
Publication of JPS6212656B2 publication Critical patent/JPS6212656B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To eliminate the adjustment time at the time of stage movement by converting a difference between a stage position and a target value, obtained by measuring the movement distance of a stage by a laser unit, into the deflection volume of an electron-beam system and by feeding it back to the beam system after offsetting. CONSTITUTION:The movement distance of stage 5 is read out by laser length- measuring instrument 11 and the read value and the target value in memory 12 are both applied to subtracter 13. The subtracter, when the both reach -alpha, applies the information to converter 14, where the difference in position is converted into the deflection volume of the electron-beam system, and addition 15 to the main data, DA conversion 16, amplification 17, and deflection 3 are carried out in the order. As time elapses, the difference becomes smaller and the correction volume also decreases. Consequently, the waste of time during electron-beam exposure can be eliminated.
JP5377578A 1978-05-08 1978-05-08 Electron-beam exposure unit Granted JPS54145479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5377578A JPS54145479A (en) 1978-05-08 1978-05-08 Electron-beam exposure unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5377578A JPS54145479A (en) 1978-05-08 1978-05-08 Electron-beam exposure unit

Publications (2)

Publication Number Publication Date
JPS54145479A true JPS54145479A (en) 1979-11-13
JPS6212656B2 JPS6212656B2 (en) 1987-03-19

Family

ID=12952180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5377578A Granted JPS54145479A (en) 1978-05-08 1978-05-08 Electron-beam exposure unit

Country Status (1)

Country Link
JP (1) JPS54145479A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0248588A2 (en) * 1986-05-27 1987-12-09 Fujitsu Limited Electron beam exposure system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145865A (en) * 1974-04-18 1975-11-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145865A (en) * 1974-04-18 1975-11-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0248588A2 (en) * 1986-05-27 1987-12-09 Fujitsu Limited Electron beam exposure system

Also Published As

Publication number Publication date
JPS6212656B2 (en) 1987-03-19

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