JPS55161242A - Mask for particle beam or x ray - Google Patents

Mask for particle beam or x ray

Info

Publication number
JPS55161242A
JPS55161242A JP6416980A JP6416980A JPS55161242A JP S55161242 A JPS55161242 A JP S55161242A JP 6416980 A JP6416980 A JP 6416980A JP 6416980 A JP6416980 A JP 6416980A JP S55161242 A JPS55161242 A JP S55161242A
Authority
JP
Japan
Prior art keywords
mask
ray
particle beam
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6416980A
Other languages
English (en)
Other versions
JPS6217850B2 (ja
Inventor
Booran Harorudo
Engeruke Herumiyuuto
Gureshiyunaa Yohan
Neemitsu Peetaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS55161242A publication Critical patent/JPS55161242A/ja
Publication of JPS6217850B2 publication Critical patent/JPS6217850B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12361—All metal or with adjacent metals having aperture or cut
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP6416980A 1979-06-01 1980-05-16 Mask for particle beam or x ray Granted JPS55161242A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792922416 DE2922416A1 (de) 1979-06-01 1979-06-01 Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung

Publications (2)

Publication Number Publication Date
JPS55161242A true JPS55161242A (en) 1980-12-15
JPS6217850B2 JPS6217850B2 (ja) 1987-04-20

Family

ID=6072302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6416980A Granted JPS55161242A (en) 1979-06-01 1980-05-16 Mask for particle beam or x ray

Country Status (4)

Country Link
US (2) US4342817A (ja)
EP (1) EP0019779B1 (ja)
JP (1) JPS55161242A (ja)
DE (2) DE2922416A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61138256A (ja) * 1984-12-10 1986-06-25 Toshiba Corp マスクパタ−ンの形成方法
JPS61138257A (ja) * 1984-12-10 1986-06-25 Toshiba Corp マスク基板
JPS62106625A (ja) * 1985-11-01 1987-05-18 Fujitsu Ltd 露光マスク
JPS63502015A (ja) * 1985-11-22 1988-08-11 ヒユ−レツト　パツカ−ド　カンパニ− 熱インクジェットプリントヘッド
JPH0276216A (ja) * 1988-09-12 1990-03-15 Fujitsu Ltd 透過マスク及びそれを有する電子ビーム露光装置
JPH06138638A (ja) * 1991-11-14 1994-05-20 Internatl Business Mach Corp <Ibm> マスク及びその製造方法
JP2000058803A (ja) * 1998-08-03 2000-02-25 St Microelectron Srl Ｓｏｉウエハの安価な製造方法
JP2004158527A (ja) * 2002-11-05 2004-06-03 Hoya Corp イオン注入用ステンシルマスク
JP2006287005A (ja) * 2005-04-01 2006-10-19 Toyota Motor Corp ステンシルマスクとその製造方法とその使用方法
JP2014122970A (ja) * 2012-12-20 2014-07-03 Dainippon Printing Co Ltd パターン位相差フィルムの製造方法、露光装置及びマスク

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3070833D1 (en) * 1980-09-19 1985-08-08 Ibm Deutschland Structure with a silicon body that presents an aperture and method of making this structure
JPS5764739A (en) * 1980-10-09 1982-04-20 Dainippon Printing Co Ltd Photomask substrate and photomask
JPS57182449A (en) * 1981-05-07 1982-11-10 Fuji Xerox Co Ltd Forming method of ink jet multinozzle
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
EP0078336B1 (de) * 1981-10-30 1988-02-03 Ibm Deutschland Gmbh Schattenwurfmaske für die Ionenimplantation und die Ionenstrahllithographie
EP0098318B1 (de) * 1982-07-03 1987-02-11 Ibm Deutschland Gmbh Verfahren zum Herstellen von Gräben mit im wesentlichen vertikalen Seitenwänden in Silicium durch reaktives Ionenätzen
US4587184A (en) * 1983-07-27 1986-05-06 Siemens Aktiengesellschaft Method for manufacturing accurate structures with a high aspect ratio and particularly for manufacturing X-ray absorber masks
ATA331285A (de) * 1985-11-13 1988-11-15 Ims Ionen Mikrofab Syst Verfahren zur herstellung einer transmissionsmaske
DE3677005D1 (de) * 1986-05-06 1991-02-21 Ibm Deutschland Maske fuer die ionen-, elektronen- oder roentgenstrahllithographie und verfahren zur ihrer herstellung.
US4929301A (en) * 1986-06-18 1990-05-29 International Business Machines Corporation Anisotropic etching method and etchant
US4927784A (en) * 1987-05-01 1990-05-22 Raytheon Company Simultaneous formation of via hole and tube structures for GaAs monolithic microwave integrated circuits
DE3806762A1 (de) * 1988-03-02 1989-09-07 Fraunhofer Ges Forschung Verfahren zur lokalen erhoehung der optischen transparenz von siliziummembranen
EP0344513A3 (de) * 1988-05-31 1991-01-16 Siemens Aktiengesellschaft Verfahren zur Herstellung einer Steuerplatte für ein Lithographiegerät
US5049460A (en) * 1988-05-31 1991-09-17 Siemens Aktiengesellschaft Method for producing beam-shaping diaphragms for lithographic devices
US5234781A (en) * 1988-11-07 1993-08-10 Fujitsu Limited Mask for lithographic patterning and a method of manufacturing the same
JP2725319B2 (ja) * 1988-11-07 1998-03-11 富士通株式会社 荷電粒子線マスクの製造方法
US5139610A (en) * 1989-04-20 1992-08-18 Honeywell Inc. Method of making a surface etched shadow mask
US4919749A (en) * 1989-05-26 1990-04-24 Nanostructures, Inc. Method for making high resolution silicon shadow masks
US4941941A (en) * 1989-10-03 1990-07-17 International Business Machines Corporation Method of anisotropically etching silicon wafers and wafer etching solution
JP2523931B2 (ja) * 1990-04-16 1996-08-14 富士通株式会社 ブランキングアパ―チャアレ―の製造方法
US5124717A (en) * 1990-12-06 1992-06-23 Xerox Corporation Ink jet printhead having integral filter
US5204690A (en) * 1991-07-01 1993-04-20 Xerox Corporation Ink jet printhead having intergral silicon filter
US5141596A (en) * 1991-07-29 1992-08-25 Xerox Corporation Method of fabricating an ink jet printhead having integral silicon filter
US5393375A (en) * 1992-02-03 1995-02-28 Cornell Research Foundation, Inc. Process for fabricating submicron single crystal electromechanical structures
US5338400A (en) * 1993-02-25 1994-08-16 Ic Sensors, Inc. Micromachining process for making perfect exterior corner in an etchable substrate
DE4309207C2 (de) * 1993-03-22 1996-07-11 Texas Instruments Deutschland Halbleitervorrichtung mit einem piezoresistiven Drucksensor
IL105299A0 (en) * 1993-04-04 1993-08-18 Technion Res & Dev Foundation Ion beam lithography mask and a method for its preparation
EP0630058A3 (de) * 1993-05-19 1995-03-15 Siemens Ag Verfahren zur Herstellung einer Pyrodetektoranordnung durch elektronisches Ätzen eines Silizium Substrats.
JP3265718B2 (ja) * 1993-06-23 2002-03-18 株式会社日立製作所 Ｓｉ転写マスク、及び、Ｓｉ転写マスクの製造方法
US5529862A (en) * 1993-09-01 1996-06-25 Texas Instruments Incorporated Method of forming a low distortion stencil mask
JP2606138B2 (ja) * 1994-06-02 1997-04-30 日本電気株式会社 電子ビーム描画装置用アパチャ
US5585069A (en) * 1994-11-10 1996-12-17 David Sarnoff Research Center, Inc. Partitioned microelectronic and fluidic device array for clinical diagnostics and chemical synthesis
TW366367B (en) * 1995-01-26 1999-08-11 Ibm Sputter deposition of hydrogenated amorphous carbon film
WO1997043694A2 (de) * 1996-05-13 1997-11-20 Ims-Ionen Mikrofabrikations Systeme Gmbh Verfahren zur herstellung einer stencil-maske
US6093330A (en) * 1997-06-02 2000-07-25 Cornell Research Foundation, Inc. Microfabrication process for enclosed microstructures
US6942811B2 (en) * 1999-10-26 2005-09-13 Reflectivity, Inc Method for achieving improved selectivity in an etching process
DE10039644A1 (de) * 2000-08-14 2002-02-28 Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh Lochmaske und Verfahren zur Herstellung einer Lochmaske
DE10039645A1 (de) * 2000-08-14 2002-03-28 Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh Lochmaske, Verfahren zur Herstellung einer Lochmaske und Anwendungen der Lochmaske
JP4802363B2 (ja) * 2000-11-29 2011-10-26 日本電気株式会社 電界放出型冷陰極及び平面画像表示装置
JP3900901B2 (ja) * 2001-11-16 2007-04-04 ソニー株式会社 マスクおよびその製造方法と半導体装置の製造方法
KR100480705B1 (ko) * 2002-07-03 2005-04-06 엘지전자 주식회사 유기 ｅｌ 소자 제작용 새도우 마스크 및 그 제조 방법
US20040104454A1 (en) * 2002-10-10 2004-06-03 Rohm Co., Ltd. Semiconductor device and method of producing the same
US7271094B2 (en) * 2004-11-23 2007-09-18 Advantech Global, Ltd Multiple shadow mask structure for deposition shadow mask protection and method of making and using same
JP2010135624A (ja) * 2008-12-05 2010-06-17 Tokyo Electron Ltd 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289714B (de) * 1964-08-27 1969-02-20 Telefunken Patent Verfahren zur Herstellung einer Maske aus einer Metallfolie
US3742230A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask support substrate
US4021276A (en) * 1975-12-29 1977-05-03 Western Electric Company, Inc. Method of making rib-structure shadow mask for ion implantation
DE2604939C3 (de) * 1976-02-09 1978-07-27 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum Herstellen von wenigstens einem Durchgangsloch insbesondere einer Düse für Tintenstrahldrucker
US4086127A (en) * 1977-07-01 1978-04-25 Westinghouse Electric Corporation Method of fabricating apertured deposition masks used for fabricating thin film transistors
US4256532A (en) * 1977-07-05 1981-03-17 International Business Machines Corporation Method for making a silicon mask
IT1109829B (it) * 1977-07-05 1985-12-23 Ibm Processo di fabbricazione di cercuiti integrati

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61138256A (ja) * 1984-12-10 1986-06-25 Toshiba Corp マスクパタ−ンの形成方法
JPS61138257A (ja) * 1984-12-10 1986-06-25 Toshiba Corp マスク基板
JPS6339893B2 (ja) * 1984-12-10 1988-08-08 Tokyo Shibaura Electric Co
JPS6339892B2 (ja) * 1984-12-10 1988-08-08 Tokyo Shibaura Electric Co
JPS62106625A (ja) * 1985-11-01 1987-05-18 Fujitsu Ltd 露光マスク
JPS63502015A (ja) * 1985-11-22 1988-08-11 ヒユ−レツト　パツカ−ド　カンパニ− 熱インクジェットプリントヘッド
JPH0276216A (ja) * 1988-09-12 1990-03-15 Fujitsu Ltd 透過マスク及びそれを有する電子ビーム露光装置
JPH06138638A (ja) * 1991-11-14 1994-05-20 Internatl Business Mach Corp <Ibm> マスク及びその製造方法
JP2000058803A (ja) * 1998-08-03 2000-02-25 St Microelectron Srl Ｓｏｉウエハの安価な製造方法
JP2004158527A (ja) * 2002-11-05 2004-06-03 Hoya Corp イオン注入用ステンシルマスク
JP2006287005A (ja) * 2005-04-01 2006-10-19 Toyota Motor Corp ステンシルマスクとその製造方法とその使用方法
JP4626365B2 (ja) * 2005-04-01 2011-02-09 トヨタ自動車株式会社 ステンシルマスクとその使用方法、並びにステンシルマスク用のイオン注入装置
JP2014122970A (ja) * 2012-12-20 2014-07-03 Dainippon Printing Co Ltd パターン位相差フィルムの製造方法、露光装置及びマスク

Also Published As

Publication number Publication date
EP0019779A2 (de) 1980-12-10
EP0019779A3 (en) 1981-10-28
EP0019779B1 (de) 1983-10-12
DE3065255D1 (en) 1983-11-17
DE2922416A1 (de) 1980-12-11
US4342817A (en) 1982-08-03
US4417946A (en) 1983-11-29
JPS6217850B2 (ja) 1987-04-20

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