IL105299A0 - Ion beam lithography mask and a method for its preparation - Google Patents

Ion beam lithography mask and a method for its preparation

Info

Publication number
IL105299A0
IL105299A0 IL105299A IL10529993A IL105299A0 IL 105299 A0 IL105299 A0 IL 105299A0 IL 105299 A IL105299 A IL 105299A IL 10529993 A IL10529993 A IL 10529993A IL 105299 A0 IL105299 A0 IL 105299A0
Authority
IL
Israel
Prior art keywords
preparation
ion beam
beam lithography
lithography mask
mask
Prior art date
Application number
IL105299A
Original Assignee
Technion Res & Dev Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technion Res & Dev Foundation filed Critical Technion Res & Dev Foundation
Priority to IL105299A priority Critical patent/IL105299A0/en
Publication of IL105299A0 publication Critical patent/IL105299A0/en
Priority to AU66998/94A priority patent/AU6699894A/en
Priority to PCT/US1994/003628 priority patent/WO1994024608A2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
IL105299A 1993-04-04 1993-04-04 Ion beam lithography mask and a method for its preparation IL105299A0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
IL105299A IL105299A0 (en) 1993-04-04 1993-04-04 Ion beam lithography mask and a method for its preparation
AU66998/94A AU6699894A (en) 1993-04-04 1994-04-04 Method of preparation of mask for ion beam lithography
PCT/US1994/003628 WO1994024608A2 (en) 1993-04-04 1994-04-04 Method of preparation of mask for ion beam lithography

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL105299A IL105299A0 (en) 1993-04-04 1993-04-04 Ion beam lithography mask and a method for its preparation

Publications (1)

Publication Number Publication Date
IL105299A0 true IL105299A0 (en) 1993-08-18

Family

ID=11064709

Family Applications (1)

Application Number Title Priority Date Filing Date
IL105299A IL105299A0 (en) 1993-04-04 1993-04-04 Ion beam lithography mask and a method for its preparation

Country Status (3)

Country Link
AU (1) AU6699894A (en)
IL (1) IL105299A0 (en)
WO (1) WO1994024608A2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021276A (en) * 1975-12-29 1977-05-03 Western Electric Company, Inc. Method of making rib-structure shadow mask for ion implantation
DE2922416A1 (en) * 1979-06-01 1980-12-11 Ibm Deutschland SHADOW MASK FOR STRUCTURING SURFACE AREAS AND METHOD FOR THEIR PRODUCTION

Also Published As

Publication number Publication date
WO1994024608A2 (en) 1994-10-27
WO1994024608A3 (en) 1994-12-08
AU6699894A (en) 1994-11-08

Similar Documents

Publication Publication Date Title
EP0475033A3 (en) Method for correcting proximity effects in electron beam lithography
IL111664A0 (en) Methods and apparatus for altering material using ion beams
EP0660370A3 (en) Electron beam lithography system.
KR930002576B1 (en) Charged particle beam lithography system and a method thereof
ZA949098B (en) Methods and apparatus for altering material using ion beams.
EP0422956A3 (en) Multiple beam exposure control
GB9515090D0 (en) An ion beam apparatus
SG43363A1 (en) A system and method for generating mask layouts
GB2299181B (en) Method for fabricating light exposure mask
EP0489426A3 (en) Projection exposure method
GB2276952B (en) Mask and method for manufacturing the same
AU130106S (en) Face mask
AU584816B2 (en) Method of detecting the position of a chrome-on-glass reticle in an electron beam lithography apparatus
EP0421695A3 (en) Electron beam exposuring device and exposuring method using the same
EP0327093A3 (en) Electron beam exposure method and apparatus
GB2226656B (en) Method for the preparation of a mask for x-ray lithography
EP0342316A3 (en) Method of electron beam lithography alignment
EP0424963A3 (en) Exposure mask
EP0443565A3 (en) Electron beam exposure apparatus
DE69314610D1 (en) Electron beam lithography method and device
KR940002732B1 (en) Mask for lithographic patterning and manufacturing method thereof
EP0432749A3 (en) Electron beam exposure method and apparatus therefor
IL105299A0 (en) Ion beam lithography mask and a method for its preparation
GB9204703D0 (en) Electron beam lithography and a system therefor
EP0408349A3 (en) Mask for lithography