WO1994024608A2

WO1994024608A2 - Method of preparation of mask for ion beam lithography

Info

Publication number: WO1994024608A2
Application number: PCT/US1994/003628
Authority: WO
Inventors: Joseph Yahalom; Martin Peckerar
Original assignee: Technion Research And Development Foundation, Ltd.; The Government Of The United States Of America, As Represented By The Secretary Of The Navy
Priority date: 1993-04-04
Filing date: 1994-04-04
Publication date: 1994-10-27
Also published as: WO1994024608A3; AU6699894A; IL105299A0

Abstract

The invention consists of a method for the manufacture of an improved mask for ion beam lithography, comprising the steps of: (a) coating a substrate by an insulating layer; (b) opening a window on the front side of the substrate; (c) depositing an oxide layer on the front side of the substrate; (d) opening a portion of the insulating layer; (e) patterning the oxide layer by ion beam photoresist and etching techniques, and (f) removal of a portion of the substrate from the backside, thus leaving a stenciled oxide mask resting on the substrate frame. The mask produced is characterized by its durability, ensuring a membrane flatness and stiffness capable to prevent any feature displacement during its use.

Description

METHOD OF PREPARATION OF MASK FOR ION BEAM LITHOGRAPHY

The present invention relates to ion beam lithography. More particularly, the invention relates to an improved mask for ion beam lithography and a method for the manufacture thereof.

BACKGROUND OF THE INVENTION

Ion beam lithography has become an important tool in microelectronics when such circuits are required.

In our previous Israeli Patent Number 88837, a method for the manufacture of an improved X-ray lithography mask was disclosed. According to this method a sequence of the following steps is involved: (a) protection of the edges of a substrate;

(b) deposition of a continuous compact oxide layer over the non-protected portion of the front side of said surface;

(c) etching the backside of the substrate, obtaining an oxide membrane supported on the substrate, and

(d) obtaining a pattern delineation on said membrane.

The use of ion charge particles is an alternative advanced microlithography approach. The ion beam imaging combines several inherent advantages: high-resolution beams, a possibility to influence its path by a magnetic field, a very low energy scatter and high energy levels of up to 150keV. A main advantage of using ion beams over electron beams is the lack of backscattered and hence minimum proximity effect.

A problem which exists in masked ion beam lithography, is a result of the pattern-dependent thermally induced distortions. The energy of the beam being absorbed in the mask will result its heating. For high-resolution lithography, this will effectively decrease the throughput by limiting the beam current density.

In a review by D. J. Elliot (Integrated Circuit fabrication technology, p. 276-281, McGraw-Hill Publishing Company, 1989) , a membrane mask is used, having a thin membrane to self-support the pattern. Either a thin amorphous membrane, sufficiently transparent for the ions, or a channelling film of crystalline silicon are suggested for this use. In both cases, the membrane supports an ion- absorbing layer of gold. The ions are scattered in the amorphous membrane and this will degrade the overall performance.

The main problem encountered in the method for the manufacture of ion beam mask, relates to the production of a thin and strong membrane capable to withstand dimensional stability and providing accuracy of the absorber pattern. This problem is solved by using a silicon membrane and exposing the resist in the channelling direction. However, residual scattering of ions in the mask membrane still exists even in the channelling of silicon membrane. This disadvantage is completely eliminated in an open-stencil mask, wherein a thin membrane with transmission holes is etched through the entire membrane thickness. A grid is provided as a support, consisting of a matrix of small transmission holes instead of completely open transmission areas. In this manner, most of the pattern restrictions associated with the stencil masks are eliminated. However, this grid increases significantly the mask area from which scattered ions may escape; furthermore, this type of mask will require a higher fluence to accomplish an exposure than simple stencil masks.

It is an object of the present invention to provide an improved ion beam lithography mask and a simple method for

SlffiS ITUTE SHEET (RULE 26) the manufacture thereof. It is another object of the present invention to provide an improved ion beam lithography mask which is highly stable, being substantially free of any stresses encountered in such known masks.

BRIEF DESCRIPTION OF THE INVENTION

The invention consists of a method for the manufacture of an improved mask for ion beam lithography, comprising the steps of: (a) coating a substrate by an insulating layer; (b) opening a window on the front side of the substrate; (c) depositing an oxide layer on the front side of the substrate; (d) opening a portion of the insulating layer; (e) patterning the oxide layer by ion beam photoresist and etching techniques, and (f) removal of a portion of the substrate from the backside, thus leaving a stenciled oxide mask resting on the substrate frame. The mask produced is characterized by its durability, ensuring a membrane flatness and siffness capable to prevent any feature displacement during its use.

DETAILED DESCRIPTION OF THE INVENTION AND FIGURES

Membranes are usually supported on a more massive ring to ensure structural strength. It is important to have a close match between the thermal expansion coefficients of the ring and the membrane. As known, a film with a high elastic modulus is necessary to minimize local distortions of the pattern due to stresses. Low residual stresses are most desirable in order to avoid distortion of the membrane after a portion of it is removed to make a stencil.

The main properties required for a material to be useful as membrane are: Young modulus and coefficient of thermal expansion. Most preferred materials are silicon, alumina and gold possessing the following main properties: The material Thermal expansion Young Modulus

(°C¹) (GP^a)

Silica 2.6 x 10^"6 162

Alumina 9 x 10^"6 373

Gold 14 x 10^"6 786

Aluminiun oxide exhibits a most interesting combination of thermal and mechanical properties: its thermal coefficeint of expansion is between those of silica and gold and its Young's modulus is high. Finally, alumina exhibits an extremely low etch rate in ion beam milling. This last property is of great significance for ion projection lithography since it indicates extremely good durability in ion beams.

The attached Figure 1, illustrates in a schematic manner a first embodiment according to the present invention. The wafer used in step (a) as substrate, is preferably silicon having a thickness of two inch, providing the frame of the mask. Of course, other materials such as copper may also be considered as substrate.

In the second step (b) , this substrate is coated with an insulating layer in order to open a window on the front side. Examples of materials suitable for this insulating are: waxes, lacquers, photoresists and most preferred are thermally grown silica, which are etched to form a window for the membrane. This membrane will be used as a mask for etching the central area of the silicon wafer.

In the third step (c) , an oxide layer is deposited on the front side of the substrate either by electron-beam evaporation or sputtering. This layer is selected from aluminum, titanium, silicon and zirconium. Aluminum is the most preferred due to its thermal and mechanical properites. Particularly, the alumina films which are formed are characterized by the following beneficial properties: are strong, exhibits a high elastic modulus, have the required minimal tensile strength, exhibits little scattering and can withstand high ion fluences. A further important advantage of alumina is the optical transparency which allows an easy alignment and low residual stresses. However, a slight tensile strength is required in order to keep the membrane flat. A most preferred method for obtaining the metal oxide layer is by a complete anodization of the front side of the substrate.

In the fourth step (d) a portion of the insulating material is opened in order to obtain a window.

In the fifth step (e) , the oxide layer is patterned by ion beam photoresist and etching techniques.

In the last step (f) a portion of the substrate from the backside is removed by selective etching reagent thus leaving an open-stencil alumina mask. A preferred reagent for this purpose is boiling hydrazine which does attack only silicon, but not alumina or silicon oxide.

According to another embodiment according to the present invention, the ion beam mask is provided with a gold absorber. This was found to be most useful in case of a stronger beam, obtaining a better absorption than without the gold presence. The thickness of the gold layer should be in the range of 0.1 to 5μ and most preferably in the range of between 0.5 and 3.5μ. According to this embodiment, as illustrated in Figure 2, the mask comprises the four steps as descirbe above followed by the following additonal steps:

(e¹) A thin layer of gold is spread onto the anodized layer using an adhesive medium such as evaporated titanium. According to a most preferred embodiment the gold spreading is carried out by sputtering which will avoid the requirement of the evaporated titanium. A photoresist is applied and the^' electron beam technology may be applied in order to obtain submicron dimensions. (f¹) The gold is etched in a dry medium, using an ion beam milling in an argon environment. The dry etching is preferred since it will reduce undercutting and would retain the submicron features.

(g¹) The patterned gold and membrane is etched by a reactive ion etching, thus forming a stencil pattern in the alumina, while the silica at the backside is etched in order to form the ring.

(h¹) In the last step, the exposed silicon is selectively etched, using a know etchant, such as hydrazine, thus leaving an alumina-gold stencil mask.

In order to provide a uniform etching the ion beam that dislodge the atoms of the incident solid, must have a substantially uniform density, being of the same wavelength of energy. In the etching chamber, the pressure should be low enough in order to prevent beam scattering and back sputtering.

The ion beam mask produce according to the present invention, may be considered as a non-optical alternative to obtain submicron images without moving to electron-beam imaging. While the invention has been described with reference to some particular embodiments, those skilled in the art will recognize that minor changes can be made in from and detail without departing from the spirit and scope of the invention as covered by the appended Claims.

Claims

CLAIMS : -

1. A method for obtaining a mask for ion beam lithography comprising the steps of:

(a) coating a substrate by an insulating layer;

(b) opening a window on the front side of the substrate;

(c) depositing an oxide layer on the front side of the substrate;

(d) opening a portion of the insulating material;

(e) patterning the oxide by ion beam photoresist and etching techniques, and

(f) removal a portion of the substrate from the back side, thus leaving a stenciled oxide mask resting on the substrate frame.

2. The method according to Claim 1, wherein said substrate is selected from silicon and copper.

3. The method according to Claims 1 or 2, wherein said substrate has a diameter in the range of 1 to 12 inches.

4. The method according to Claim 1, wherein the insulating material is selected from thermally grown silica, waxes, lacquers and photoresist.

5. The method according to Claim 1, wherein the oxide layer deposited on the front side of the substrate in step (c) is obtained by sputtering.

6. The method according to Claim 1, wherein said oxide layer is carried out by a complete anodization of the front side of the metal of the substrate.

7. The method according to Claim 1, wherein the selective etching in step (f) is carried out by a hydrazine.

8. The mask for ion beam lithography substantially as obtained according to the method of Claims 1 to 7.

9. A method for obtaining a mask for ion beam comprising the steps of:

(a) coating a substrate by an insulating layer;

(b) opening a window on the front side of the substrate;

(c) depositing an oxide layer on the front side of the substrate;

(d) spread a thin layer of gold onto the oxide layer;

(e) etching the gold in a dry medium, using an ion beam milling in an inert environment; (f) etching the patterned gold and membrane by a reactive ion etching, thus obtaining a stencil pattern on the oxide upper side and a ring on the substrate backside, and (g) etching selectively the exposed substrate thus producing an oxide-gold stencil mask.

10. The method according to Claim 9, wherein in step (d) the thin layer of gold is spread by sputtering.

ll. The method according to Claim 9, wherein in step (g) , said selective etching on the exposed silicon is made by a solution of hydrazine.

12. A method for obtaining a mask for ion beam, substantially as described in the specification and claimed in any one of

Claims 1 to 7 and 9 to 11.

13. The mask for ion beam lithogaraphy substantially as obtained by any one of Claims 9 to 11.