JPH0316116A - Mask structure for x-ray lithography and x-ray exposure using mask structure - Google Patents

Mask structure for x-ray lithography and x-ray exposure using mask structure

Info

Publication number
JPH0316116A
JPH0316116A JP4723890A JP4723890A JPH0316116A JP H0316116 A JPH0316116 A JP H0316116A JP 4723890 A JP4723890 A JP 4723890A JP 4723890 A JP4723890 A JP 4723890A JP H0316116 A JPH0316116 A JP H0316116A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
rays
ray
nitrogen
ray absorbents
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4723890A
Inventor
Tsutomu Ikeda
Hideo Kato
Masao Sugata
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To perform highly accurate pattern transfer; besides, prevent the destruction of X-ray absorbents during the manufacture of X-ray mask structures or during normal service of them by forming the X-ray absorbents which exhibit high properties adherent to a film permeable to X-rays on the film that is permeable to the X-rays and exhibits low thermal expansion and high heat transmission properties.
CONSTITUTION: A film 2 permeable to X-rays, X-ray absorbents 3, and a holding frame 1 are provided in such a way that the film 2 consists of a single layer film having aluminum and nitrogen as main components or a laminated film which contains at least the above single layer film and the X-ray absorbents 3 have a metal that is held on the film 2 as well as nitrogen as the main components and further, the holding frame 1 holds the film 2 perme able to X-rays. Having aluminum and nitrogen as the main components, the film 2 exhibits low thermal expansion properties and yet, has high heat transmission properties and prevents the rise of a temperature due to absorption of the X-rays. On the other hand, having the metal and nitrogen as the main components, the X-ray absorbents 3 exhibit high properties adherent to the film 2. This enables these elements to form patterns equipped with a hyper-fine high aspect ratio and the destruction of the patterns due to stress that is established on the occasion of forming a protecting film (or secondary electron anti-scattering film) made of polyimide and the like on the X-ray absorbents 3 is prevented.
COPYRIGHT: (C)1991,JPO&Japio
JP4723890A 1989-03-09 1990-03-01 Mask structure for x-ray lithography and x-ray exposure using mask structure Pending JPH0316116A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5503189 1989-03-09
JP4723890A JPH0316116A (en) 1989-03-09 1990-03-01 Mask structure for x-ray lithography and x-ray exposure using mask structure

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP4723890A JPH0316116A (en) 1989-03-09 1990-03-01 Mask structure for x-ray lithography and x-ray exposure using mask structure
US07489277 US5196283A (en) 1989-03-09 1990-03-06 X-ray mask structure, and x-ray exposure process
EP19900104540 EP0386786B1 (en) 1989-03-09 1990-03-09 X-ray mask structure, and x-ray exposure process
DE1990623023 DE69023023D1 (en) 1989-03-09 1990-03-09 X-ray mask structure and X-ray exposure method.
DE1990623023 DE69023023T2 (en) 1989-03-09 1990-03-09 X-ray mask structure and X-ray exposure method.
US08565215 US5773177A (en) 1989-03-09 1995-11-30 X-ray mask structure, and X-ray exposure process

Publications (1)

Publication Number Publication Date
JPH0316116A true true JPH0316116A (en) 1991-01-24

Family

ID=26387402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4723890A Pending JPH0316116A (en) 1989-03-09 1990-03-01 Mask structure for x-ray lithography and x-ray exposure using mask structure

Country Status (1)

Country Link
JP (1) JPH0316116A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273514A (en) * 2006-03-30 2007-10-18 Hoya Corp Reflective mask blanks, reflective mask, and method for manufacturing semiconductor device
JPWO2008084680A1 (en) * 2006-12-27 2010-04-30 旭硝子株式会社 Euv lithography reflective mask blank
JPWO2008093534A1 (en) * 2007-01-31 2010-05-20 旭硝子株式会社 Euv lithography reflective mask blank
US9207529B2 (en) 2012-12-27 2015-12-08 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, and process for its production

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61140942A (en) * 1984-12-13 1986-06-28 Canon Inc Mask structure for lithography
JPS6376325A (en) * 1987-06-30 1988-04-06 Agency Of Ind Science & Technol X-ray absorber film of mask for x-ray lithography
JPS63317676A (en) * 1987-06-19 1988-12-26 Sharp Corp Production of thin metallic compound film having non-grained structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61140942A (en) * 1984-12-13 1986-06-28 Canon Inc Mask structure for lithography
JPS63317676A (en) * 1987-06-19 1988-12-26 Sharp Corp Production of thin metallic compound film having non-grained structure
JPS6376325A (en) * 1987-06-30 1988-04-06 Agency Of Ind Science & Technol X-ray absorber film of mask for x-ray lithography

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273514A (en) * 2006-03-30 2007-10-18 Hoya Corp Reflective mask blanks, reflective mask, and method for manufacturing semiconductor device
JPWO2008084680A1 (en) * 2006-12-27 2010-04-30 旭硝子株式会社 Euv lithography reflective mask blank
JP5018787B2 (en) * 2006-12-27 2012-09-05 旭硝子株式会社 Euv lithography reflective mask blank
JPWO2008093534A1 (en) * 2007-01-31 2010-05-20 旭硝子株式会社 Euv lithography reflective mask blank
JP5018789B2 (en) * 2007-01-31 2012-09-05 旭硝子株式会社 Euv lithography reflective mask blank
US9207529B2 (en) 2012-12-27 2015-12-08 Asahi Glass Company, Limited Reflective mask blank for EUV lithography, and process for its production

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