JPS55158674A - Manufacture of charge coupled device driven in two phases - Google Patents
Manufacture of charge coupled device driven in two phasesInfo
- Publication number
- JPS55158674A JPS55158674A JP6613379A JP6613379A JPS55158674A JP S55158674 A JPS55158674 A JP S55158674A JP 6613379 A JP6613379 A JP 6613379A JP 6613379 A JP6613379 A JP 6613379A JP S55158674 A JPS55158674 A JP S55158674A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- ions
- phases
- layer
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6613379A JPS55158674A (en) | 1979-05-30 | 1979-05-30 | Manufacture of charge coupled device driven in two phases |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6613379A JPS55158674A (en) | 1979-05-30 | 1979-05-30 | Manufacture of charge coupled device driven in two phases |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55158674A true JPS55158674A (en) | 1980-12-10 |
Family
ID=13307057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6613379A Pending JPS55158674A (en) | 1979-05-30 | 1979-05-30 | Manufacture of charge coupled device driven in two phases |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55158674A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2577715A1 (fr) * | 1985-02-19 | 1986-08-22 | Thomson Csf | Procede de realisation de deux structures mos a dielectriques juxtaposes differents et dopages differents et matrice a transfert de trame obtenue par ce procede |
JPH036837A (ja) * | 1989-06-05 | 1991-01-14 | Sharp Corp | 電荷転送素子及びその製造方法 |
-
1979
- 1979-05-30 JP JP6613379A patent/JPS55158674A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2577715A1 (fr) * | 1985-02-19 | 1986-08-22 | Thomson Csf | Procede de realisation de deux structures mos a dielectriques juxtaposes differents et dopages differents et matrice a transfert de trame obtenue par ce procede |
US4648941A (en) * | 1985-02-19 | 1987-03-10 | Thomson-Csf | Process for forming two MOS structures with different juxtaposed dielectrics and different dopings |
JPH036837A (ja) * | 1989-06-05 | 1991-01-14 | Sharp Corp | 電荷転送素子及びその製造方法 |
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