JPS55154767A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55154767A
JPS55154767A JP6257879A JP6257879A JPS55154767A JP S55154767 A JPS55154767 A JP S55154767A JP 6257879 A JP6257879 A JP 6257879A JP 6257879 A JP6257879 A JP 6257879A JP S55154767 A JPS55154767 A JP S55154767A
Authority
JP
Japan
Prior art keywords
layer
region
substrate
forming
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6257879A
Other languages
English (en)
Inventor
Kenji Shibata
Shinji Onga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6257879A priority Critical patent/JPS55154767A/ja
Publication of JPS55154767A publication Critical patent/JPS55154767A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H01L29/78657—SOS transistors
JP6257879A 1979-05-23 1979-05-23 Manufacture of semiconductor device Pending JPS55154767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6257879A JPS55154767A (en) 1979-05-23 1979-05-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6257879A JPS55154767A (en) 1979-05-23 1979-05-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55154767A true JPS55154767A (en) 1980-12-02

Family

ID=13204327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6257879A Pending JPS55154767A (en) 1979-05-23 1979-05-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55154767A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975670A (ja) * 1982-10-25 1984-04-28 Seiko Epson Corp 薄膜半導体装置の製造方法
US5196912A (en) * 1988-10-28 1993-03-23 Casio Computer Co., Ltd. Thin film transistor having memory function and method for using thin film transistor as memory element
US5539229A (en) * 1994-12-28 1996-07-23 International Business Machines Corporation MOSFET with raised STI isolation self-aligned to the gate stack
US7276764B1 (en) * 1997-03-25 2007-10-02 Rohm Co., Ltd. Semiconductor device with metal wire layer masking
CN109742157A (zh) * 2019-01-21 2019-05-10 北京镓族科技有限公司 一种β-Ga2O3基薄膜晶体管及其制备方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5975670A (ja) * 1982-10-25 1984-04-28 Seiko Epson Corp 薄膜半導体装置の製造方法
US5196912A (en) * 1988-10-28 1993-03-23 Casio Computer Co., Ltd. Thin film transistor having memory function and method for using thin film transistor as memory element
US5539229A (en) * 1994-12-28 1996-07-23 International Business Machines Corporation MOSFET with raised STI isolation self-aligned to the gate stack
US7276764B1 (en) * 1997-03-25 2007-10-02 Rohm Co., Ltd. Semiconductor device with metal wire layer masking
CN109742157A (zh) * 2019-01-21 2019-05-10 北京镓族科技有限公司 一种β-Ga2O3基薄膜晶体管及其制备方法

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