JPS55151339A - Quartz tube for heat treatment - Google Patents

Quartz tube for heat treatment

Info

Publication number
JPS55151339A
JPS55151339A JP6107879A JP6107879A JPS55151339A JP S55151339 A JPS55151339 A JP S55151339A JP 6107879 A JP6107879 A JP 6107879A JP 6107879 A JP6107879 A JP 6107879A JP S55151339 A JPS55151339 A JP S55151339A
Authority
JP
Japan
Prior art keywords
tube
silicon film
quartz tube
retain
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6107879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6133256B2 (cg-RX-API-DMAC7.html
Inventor
Masaaki Sadamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6107879A priority Critical patent/JPS55151339A/ja
Publication of JPS55151339A publication Critical patent/JPS55151339A/ja
Publication of JPS6133256B2 publication Critical patent/JPS6133256B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP6107879A 1979-05-16 1979-05-16 Quartz tube for heat treatment Granted JPS55151339A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6107879A JPS55151339A (en) 1979-05-16 1979-05-16 Quartz tube for heat treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6107879A JPS55151339A (en) 1979-05-16 1979-05-16 Quartz tube for heat treatment

Publications (2)

Publication Number Publication Date
JPS55151339A true JPS55151339A (en) 1980-11-25
JPS6133256B2 JPS6133256B2 (cg-RX-API-DMAC7.html) 1986-08-01

Family

ID=13160726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6107879A Granted JPS55151339A (en) 1979-05-16 1979-05-16 Quartz tube for heat treatment

Country Status (1)

Country Link
JP (1) JPS55151339A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170019A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体装置製造装置
WO1999036589A1 (en) * 1998-01-13 1999-07-22 Applied Materials, Inc. Method of cleaning a cvd cold-wall chamber and exhaust lines
US6559421B1 (en) 1999-10-29 2003-05-06 Ricoh Company, Ltd. Image forming apparatus and fixing device therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029166A (cg-RX-API-DMAC7.html) * 1973-07-17 1975-03-25
JPS5150576A (ja) * 1974-10-29 1976-05-04 Tokyo Shibaura Electric Co Handotaikibanjonosankakeisosokisoseichoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029166A (cg-RX-API-DMAC7.html) * 1973-07-17 1975-03-25
JPS5150576A (ja) * 1974-10-29 1976-05-04 Tokyo Shibaura Electric Co Handotaikibanjonosankakeisosokisoseichoho

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58170019A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体装置製造装置
WO1999036589A1 (en) * 1998-01-13 1999-07-22 Applied Materials, Inc. Method of cleaning a cvd cold-wall chamber and exhaust lines
US6042654A (en) * 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines
US6559421B1 (en) 1999-10-29 2003-05-06 Ricoh Company, Ltd. Image forming apparatus and fixing device therefor
US6646227B2 (en) 1999-10-29 2003-11-11 Ricoh Company, Ltd. Image forming apparatus and fixing device therefor
US6897409B2 (en) 1999-10-29 2005-05-24 Ricoh Company, Ltd. Image forming apparatus and fixing device therefor

Also Published As

Publication number Publication date
JPS6133256B2 (cg-RX-API-DMAC7.html) 1986-08-01

Similar Documents

Publication Publication Date Title
US5584963A (en) Semiconductor device manufacturing apparatus and cleaning method for the apparatus
US5725677A (en) Dry cleaning process for cleaning a surface
KR960009031A (ko) 질화 실리콘(Silicon Nitride)막의 UV-촉진된 건식 스트리핑 방법
WO2004086482A1 (ja) 薄膜形成装置の洗浄方法
JPS55120143A (en) Method of forming semiconductor surface insulating film
US4936940A (en) Equipment for surface treatment
JPS5753939A (en) Dry etching method for thin film
JPS6448425A (en) Forming method of insulating film
JPH05326464A (ja) 基板表面の気相洗浄方法
JPH04136175A (ja) 薄膜形成装置
JPS55151339A (en) Quartz tube for heat treatment
JPS5998726A (ja) 酸化膜形成法
JP2010045409A (ja) 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
KR900017144A (ko) 콜드웰 cvd 반응기에서의 티타늄 질화물 증착장치 및 그 방법
JPS6482550A (en) Surface treatment
JPS6437028A (en) Manufacture of semiconductor element
JPH03229415A (ja) 半導体装置のドライクリーニング方法
JPS5713738A (en) Vapor-phase growing apparatus
KR960006688B1 (ko) 저압화학기상증착 반응실의 오염원 제거 방법
JPH06151409A (ja) Cvd装置のクリーニング方法
JPH01312833A (ja) 気相成長装置
JPH034530A (ja) 半導体製造装置
JPH0472727A (ja) ガス洗浄法
JPS6262514A (ja) 光化学気相成長装置
JPS5642350A (en) Formation of insulating film