JPS55149195A - Manufacture of silicon carbide substrate - Google Patents
Manufacture of silicon carbide substrateInfo
- Publication number
- JPS55149195A JPS55149195A JP5613179A JP5613179A JPS55149195A JP S55149195 A JPS55149195 A JP S55149195A JP 5613179 A JP5613179 A JP 5613179A JP 5613179 A JP5613179 A JP 5613179A JP S55149195 A JPS55149195 A JP S55149195A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sic
- temp
- starting material
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5613179A JPS55149195A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5613179A JPS55149195A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55149195A true JPS55149195A (en) | 1980-11-20 |
JPS6152120B2 JPS6152120B2 (fr) | 1986-11-12 |
Family
ID=13018513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5613179A Granted JPS55149195A (en) | 1979-05-07 | 1979-05-07 | Manufacture of silicon carbide substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55149195A (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012136366A (ja) * | 2010-12-24 | 2012-07-19 | Toyo Tanso Kk | 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法 |
JP2012136372A (ja) * | 2010-12-24 | 2012-07-19 | Toyo Tanso Kk | 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法 |
JP2012136376A (ja) * | 2010-12-24 | 2012-07-19 | Toyo Tanso Kk | 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法 |
CN103282557A (zh) * | 2010-12-24 | 2013-09-04 | 东洋炭素株式会社 | 单晶碳化硅液相外延生长用单元和单晶碳化硅的液相外延生长方法 |
-
1979
- 1979-05-07 JP JP5613179A patent/JPS55149195A/ja active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012136366A (ja) * | 2010-12-24 | 2012-07-19 | Toyo Tanso Kk | 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法 |
JP2012136372A (ja) * | 2010-12-24 | 2012-07-19 | Toyo Tanso Kk | 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法 |
JP2012136376A (ja) * | 2010-12-24 | 2012-07-19 | Toyo Tanso Kk | 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法 |
CN103282557A (zh) * | 2010-12-24 | 2013-09-04 | 东洋炭素株式会社 | 单晶碳化硅液相外延生长用单元和单晶碳化硅的液相外延生长方法 |
EP2657374A1 (fr) * | 2010-12-24 | 2013-10-30 | Toyo Tanso Co., Ltd. | Unité pour croissance épitaxiale en phase liquide du carbure de silicium monocristallin, et procédé de croissance épitaxiale en phase liquide du carbure de silicium monocristallin |
EP2657374A4 (fr) * | 2010-12-24 | 2014-05-07 | Toyo Tanso Co | Unité pour croissance épitaxiale en phase liquide du carbure de silicium monocristallin, et procédé de croissance épitaxiale en phase liquide du carbure de silicium monocristallin |
US9252206B2 (en) | 2010-12-24 | 2016-02-02 | Toyo Tanso Co., Ltd. | Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide |
CN103282557B (zh) * | 2010-12-24 | 2017-02-15 | 东洋炭素株式会社 | 单晶碳化硅液相外延生长用单元和单晶碳化硅的液相外延生长方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6152120B2 (fr) | 1986-11-12 |
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