JPS55149195A - Manufacture of silicon carbide substrate - Google Patents

Manufacture of silicon carbide substrate

Info

Publication number
JPS55149195A
JPS55149195A JP5613179A JP5613179A JPS55149195A JP S55149195 A JPS55149195 A JP S55149195A JP 5613179 A JP5613179 A JP 5613179A JP 5613179 A JP5613179 A JP 5613179A JP S55149195 A JPS55149195 A JP S55149195A
Authority
JP
Japan
Prior art keywords
substrate
sic
temp
starting material
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5613179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152120B2 (fr
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5613179A priority Critical patent/JPS55149195A/ja
Publication of JPS55149195A publication Critical patent/JPS55149195A/ja
Publication of JPS6152120B2 publication Critical patent/JPS6152120B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP5613179A 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate Granted JPS55149195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5613179A JPS55149195A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5613179A JPS55149195A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Publications (2)

Publication Number Publication Date
JPS55149195A true JPS55149195A (en) 1980-11-20
JPS6152120B2 JPS6152120B2 (fr) 1986-11-12

Family

ID=13018513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5613179A Granted JPS55149195A (en) 1979-05-07 1979-05-07 Manufacture of silicon carbide substrate

Country Status (1)

Country Link
JP (1) JPS55149195A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012136366A (ja) * 2010-12-24 2012-07-19 Toyo Tanso Kk 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP2012136372A (ja) * 2010-12-24 2012-07-19 Toyo Tanso Kk 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP2012136376A (ja) * 2010-12-24 2012-07-19 Toyo Tanso Kk 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
CN103282557A (zh) * 2010-12-24 2013-09-04 东洋炭素株式会社 单晶碳化硅液相外延生长用单元和单晶碳化硅的液相外延生长方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012136366A (ja) * 2010-12-24 2012-07-19 Toyo Tanso Kk 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP2012136372A (ja) * 2010-12-24 2012-07-19 Toyo Tanso Kk 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
JP2012136376A (ja) * 2010-12-24 2012-07-19 Toyo Tanso Kk 単結晶炭化ケイ素液相エピタキシャル成長用ユニット及び単結晶炭化ケイ素の液相エピタキシャル成長方法
CN103282557A (zh) * 2010-12-24 2013-09-04 东洋炭素株式会社 单晶碳化硅液相外延生长用单元和单晶碳化硅的液相外延生长方法
EP2657374A1 (fr) * 2010-12-24 2013-10-30 Toyo Tanso Co., Ltd. Unité pour croissance épitaxiale en phase liquide du carbure de silicium monocristallin, et procédé de croissance épitaxiale en phase liquide du carbure de silicium monocristallin
EP2657374A4 (fr) * 2010-12-24 2014-05-07 Toyo Tanso Co Unité pour croissance épitaxiale en phase liquide du carbure de silicium monocristallin, et procédé de croissance épitaxiale en phase liquide du carbure de silicium monocristallin
US9252206B2 (en) 2010-12-24 2016-02-02 Toyo Tanso Co., Ltd. Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
CN103282557B (zh) * 2010-12-24 2017-02-15 东洋炭素株式会社 单晶碳化硅液相外延生长用单元和单晶碳化硅的液相外延生长方法

Also Published As

Publication number Publication date
JPS6152120B2 (fr) 1986-11-12

Similar Documents

Publication Publication Date Title
JPS52140267A (en) Vapor epitaxial crystal growing device
JPS55149195A (en) Manufacture of silicon carbide substrate
JPS55104999A (en) Production of silicon carbide crystal layer
JPS55149192A (en) Manufacture of silicon carbide crystal layer
JPS55149193A (en) Manufacture of silicon carbide substrate
JPS55149194A (en) Manufacture of silicon carbide substrate
JPS55149197A (en) Manufacture of silicon carbide substrate
JPS56160400A (en) Growing method for gallium nitride
JPS55149196A (en) Manufacture of silicon carbide substrate
JPS55149198A (en) Manufacture of silicon carbide substrate
JPS55149191A (en) Manufacture of silicon carbide crystal layer
JPS5645897A (en) Manufacture of silicon carbide crystal
JPS5247673A (en) Process for production of silicon crystal film
JPS577923A (en) Manufacture of receiving table for processing single silicon crystal wafer
JPS54104488A (en) Production of silicon carbide crystal layer
JPS53108389A (en) Manufacture for semiconductor device
JPS53146299A (en) Production of silicon carbide substrate
JPS53149194A (en) Coating method for graphite substrate with silicon carbide
JPS55105000A (en) Production of silicon carbide crystal layer
JPS5648237A (en) Evacuated gaseous phase reactor
JPS55116700A (en) Production of silicon carbide crystal layer
JPS5645898A (en) Manufacture of silicon carbide crystal
JPS5645896A (en) Manufacture of silicon carbide crystal
JPS5336182A (en) Thin semiconductor single crystal film forming insulation substrate
FR2443137A1 (fr) Procede pour ameliorer l'uniformite des couches epitaxiales, dispositif et produits obtenus