JPS55149115A - Preparation of polycrystal silicon and working body used for said method - Google Patents

Preparation of polycrystal silicon and working body used for said method

Info

Publication number
JPS55149115A
JPS55149115A JP6079980A JP6079980A JPS55149115A JP S55149115 A JPS55149115 A JP S55149115A JP 6079980 A JP6079980 A JP 6079980A JP 6079980 A JP6079980 A JP 6079980A JP S55149115 A JPS55149115 A JP S55149115A
Authority
JP
Japan
Prior art keywords
preparation
working body
body used
polycrystal silicon
polycrystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6079980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5716921B2 (it
Inventor
Hiru Roorensu
Gaabisu Denisu
Heraa Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc filed Critical Arris Technology Inc
Publication of JPS55149115A publication Critical patent/JPS55149115A/ja
Publication of JPS5716921B2 publication Critical patent/JPS5716921B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
JP6079980A 1979-05-10 1980-05-09 Preparation of polycrystal silicon and working body used for said method Granted JPS55149115A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/037,864 US4238436A (en) 1979-05-10 1979-05-10 Method of obtaining polycrystalline silicon

Publications (2)

Publication Number Publication Date
JPS55149115A true JPS55149115A (en) 1980-11-20
JPS5716921B2 JPS5716921B2 (it) 1982-04-08

Family

ID=21896784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6079980A Granted JPS55149115A (en) 1979-05-10 1980-05-09 Preparation of polycrystal silicon and working body used for said method

Country Status (6)

Country Link
US (1) US4238436A (it)
JP (1) JPS55149115A (it)
CA (1) CA1125028A (it)
DE (1) DE3016310A1 (it)
FR (1) FR2456070A1 (it)
GB (1) GB2048232B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2967538D1 (en) * 1978-06-14 1985-12-05 Fujitsu Ltd Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
DE2927086C2 (de) * 1979-07-04 1987-02-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen
DE3019653A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahres zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
DE3019635A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahrens zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
US4370288A (en) * 1980-11-18 1983-01-25 Motorola, Inc. Process for forming self-supporting semiconductor film
FR2529189B1 (fr) * 1982-06-25 1985-08-09 Comp Generale Electricite Procede de fabrication d'une bande de silicium polycristallin pour photophiles
US4471036A (en) * 1983-06-29 1984-09-11 The United States Of America As Represented By The United States Department Of Energy Electrochemical photovoltaic cells and electrodes
US4524237A (en) * 1984-02-08 1985-06-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased voltage photovoltaic cell
US4981102A (en) * 1984-04-12 1991-01-01 Ethyl Corporation Chemical vapor deposition reactor and process
US4705659A (en) * 1985-04-01 1987-11-10 Motorola, Inc. Carbon film oxidation for free-standing film formation
JP3242452B2 (ja) * 1992-06-19 2001-12-25 三菱電機株式会社 薄膜太陽電池の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1109142B (de) * 1958-04-03 1961-06-22 Wacker Chemie Gmbh Verfahren zur Herstellung geformter Koerper
DE1943359A1 (de) * 1969-08-26 1971-03-04 Siemens Ag Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkoerpers aus Halbleitermaterial
JPS5134263B2 (it) * 1972-03-28 1976-09-25
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon
DE2618398C3 (de) * 1976-04-27 1978-10-19 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur kontinuierlichen Herstellung von Siliciumstäben oder -rohren
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
DE2652218A1 (de) * 1976-11-16 1978-05-24 Wacker Chemitronic Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium

Also Published As

Publication number Publication date
GB2048232A (en) 1980-12-10
FR2456070A1 (fr) 1980-12-05
DE3016310C2 (it) 1988-08-11
GB2048232B (en) 1983-02-02
FR2456070B1 (it) 1984-09-28
JPS5716921B2 (it) 1982-04-08
US4238436A (en) 1980-12-09
CA1125028A (en) 1982-06-08
DE3016310A1 (de) 1980-11-20

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