FR2456070A1 - Procede pour l'obtention de silicium polycristallin et piece utile pour la mise en oeuvre de ce procede - Google Patents

Procede pour l'obtention de silicium polycristallin et piece utile pour la mise en oeuvre de ce procede

Info

Publication number
FR2456070A1
FR2456070A1 FR8010532A FR8010532A FR2456070A1 FR 2456070 A1 FR2456070 A1 FR 2456070A1 FR 8010532 A FR8010532 A FR 8010532A FR 8010532 A FR8010532 A FR 8010532A FR 2456070 A1 FR2456070 A1 FR 2456070A1
Authority
FR
France
Prior art keywords
polycrystalline silicon
carrying
face
layer
part useful
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8010532A
Other languages
English (en)
Other versions
FR2456070B1 (fr
Inventor
Lawrence Hill
Dennis Garbis
Robert Heller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc, General Instrument Corp filed Critical Arris Technology Inc
Publication of FR2456070A1 publication Critical patent/FR2456070A1/fr
Application granted granted Critical
Publication of FR2456070B1 publication Critical patent/FR2456070B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/915—Separating from substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PIECE COMPRENANT UN CORPS DE SUBSTRAT 10 MUNI D'UNE FACE SUPERIEURE PRATIQUEMENT PLANE 12 ET D'UNE PAROI LATERALE 14 ET UN REVETEMENT DE BASE 20 DISPOSE AU MOINS SUR LA FACE MENTIONNEE DU SUBSTRAT ET FORME D'UNE COMPOSITION D'OXYDE, DE NITRURE OU D'OXYNITRURE. ELLE PORTE, AU MOINS SUR LA FACE 22 DU REVETEMENT DE BASE, UNE COUCHE DE CARBONE 30 PRATIQUEMENT EXEMPTE DE TROUS D'EPINGLE ET DE RAYURES, SUR LAQUELLE ON PEUT DEPOSER UNE COUCHE DE SILICIUM POLYCRISTALLIN. APPLICATION A L'OBTENTION DE PLAQUES DE SILICIUM POLYCRISTALLIN DANS DES CONDITIONS EXTREMEMENT ECONOMIQUES.
FR8010532A 1979-05-10 1980-05-09 Procede pour l'obtention de silicium polycristallin et piece utile pour la mise en oeuvre de ce procede Granted FR2456070A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/037,864 US4238436A (en) 1979-05-10 1979-05-10 Method of obtaining polycrystalline silicon

Publications (2)

Publication Number Publication Date
FR2456070A1 true FR2456070A1 (fr) 1980-12-05
FR2456070B1 FR2456070B1 (fr) 1984-09-28

Family

ID=21896784

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8010532A Granted FR2456070A1 (fr) 1979-05-10 1980-05-09 Procede pour l'obtention de silicium polycristallin et piece utile pour la mise en oeuvre de ce procede

Country Status (6)

Country Link
US (1) US4238436A (fr)
JP (1) JPS55149115A (fr)
CA (1) CA1125028A (fr)
DE (1) DE3016310A1 (fr)
FR (1) FR2456070A1 (fr)
GB (1) GB2048232B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2967538D1 (en) * 1978-06-14 1985-12-05 Fujitsu Ltd Process for producing a semiconductor device having an insulating layer of silicon dioxide covered by a film of silicon oxynitride
DE2927086C2 (de) * 1979-07-04 1987-02-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von platten- oder bandförmigen Siliziumkristallkörpern mit Säulenstruktur für Solarzellen
DE3019653A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahres zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
DE3019635A1 (de) * 1980-05-22 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Verbesserung eines verfahrens zur herstellung von platten-, band- oder folienfoermigen siliziumkristallkoerpern fuer solarzellen
US4370288A (en) * 1980-11-18 1983-01-25 Motorola, Inc. Process for forming self-supporting semiconductor film
FR2529189B1 (fr) * 1982-06-25 1985-08-09 Comp Generale Electricite Procede de fabrication d'une bande de silicium polycristallin pour photophiles
US4471036A (en) * 1983-06-29 1984-09-11 The United States Of America As Represented By The United States Department Of Energy Electrochemical photovoltaic cells and electrodes
US4524237A (en) * 1984-02-08 1985-06-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased voltage photovoltaic cell
US4981102A (en) * 1984-04-12 1991-01-01 Ethyl Corporation Chemical vapor deposition reactor and process
US4705659A (en) * 1985-04-01 1987-11-10 Motorola, Inc. Carbon film oxidation for free-standing film formation
JP3242452B2 (ja) * 1992-06-19 2001-12-25 三菱電機株式会社 薄膜太陽電池の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1109142B (de) * 1958-04-03 1961-06-22 Wacker Chemie Gmbh Verfahren zur Herstellung geformter Koerper
US3867497A (en) * 1972-03-28 1975-02-18 Wacker Chemitronic Process of making hollow bodies or tubes of semi-conducting materials

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1943359A1 (de) * 1969-08-26 1971-03-04 Siemens Ag Verfahren zum Herstellen eines mindestens einseitig offenen Hohlkoerpers aus Halbleitermaterial
US4027053A (en) * 1975-12-19 1977-05-31 Motorola, Inc. Method of producing polycrystalline silicon ribbon
DE2618398C3 (de) * 1976-04-27 1978-10-19 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur kontinuierlichen Herstellung von Siliciumstäben oder -rohren
DE2638270C2 (de) * 1976-08-25 1983-01-27 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung großflächiger, freitragender Platten aus Silicium
DE2652218A1 (de) * 1976-11-16 1978-05-24 Wacker Chemitronic Verfahren zur herstellung von substratgebundenem, grossflaechigem silicium

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1109142B (de) * 1958-04-03 1961-06-22 Wacker Chemie Gmbh Verfahren zur Herstellung geformter Koerper
US3867497A (en) * 1972-03-28 1975-02-18 Wacker Chemitronic Process of making hollow bodies or tubes of semi-conducting materials

Also Published As

Publication number Publication date
GB2048232A (en) 1980-12-10
JPS55149115A (en) 1980-11-20
DE3016310C2 (fr) 1988-08-11
GB2048232B (en) 1983-02-02
FR2456070B1 (fr) 1984-09-28
JPS5716921B2 (fr) 1982-04-08
US4238436A (en) 1980-12-09
CA1125028A (fr) 1982-06-08
DE3016310A1 (de) 1980-11-20

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Legal Events

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CD Change of name or company name
TP Transmission of property