JPS55146976A - Insulating gate field effect transistor - Google Patents

Insulating gate field effect transistor

Info

Publication number
JPS55146976A
JPS55146976A JP5464679A JP5464679A JPS55146976A JP S55146976 A JPS55146976 A JP S55146976A JP 5464679 A JP5464679 A JP 5464679A JP 5464679 A JP5464679 A JP 5464679A JP S55146976 A JPS55146976 A JP S55146976A
Authority
JP
Japan
Prior art keywords
region
type
concave
gate electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5464679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159666B2 (enrdf_load_stackoverflow
Inventor
Kenji Hideshima
Tetsuo Ichikawa
Yuki Shimada
Kuniharu Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5464679A priority Critical patent/JPS55146976A/ja
Publication of JPS55146976A publication Critical patent/JPS55146976A/ja
Publication of JPS6159666B2 publication Critical patent/JPS6159666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
JP5464679A 1979-05-02 1979-05-02 Insulating gate field effect transistor Granted JPS55146976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5464679A JPS55146976A (en) 1979-05-02 1979-05-02 Insulating gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5464679A JPS55146976A (en) 1979-05-02 1979-05-02 Insulating gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS55146976A true JPS55146976A (en) 1980-11-15
JPS6159666B2 JPS6159666B2 (enrdf_load_stackoverflow) 1986-12-17

Family

ID=12976534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5464679A Granted JPS55146976A (en) 1979-05-02 1979-05-02 Insulating gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS55146976A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
JPS63213969A (ja) * 1987-03-03 1988-09-06 Nec Corp 半導体集積回路装置の製造方法
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
US5296727A (en) * 1990-08-24 1994-03-22 Fujitsu Limited Double gate FET and process for manufacturing same
US5532179A (en) * 1992-07-24 1996-07-02 Siliconix Incorporated Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof
US5558313A (en) * 1992-07-24 1996-09-24 Siliconix Inorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5877538A (en) * 1995-06-02 1999-03-02 Silixonix Incorporated Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench
US5923979A (en) * 1997-09-03 1999-07-13 Siliconix Incorporated Planar DMOS transistor fabricated by a three mask process
US6096608A (en) * 1997-06-30 2000-08-01 Siliconix Incorporated Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
US6627950B1 (en) 1988-12-27 2003-09-30 Siliconix, Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015004883A1 (ja) * 2013-07-11 2015-01-15 パナソニックＩｐマネジメント株式会社 半導体装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
JPS63213969A (ja) * 1987-03-03 1988-09-06 Nec Corp 半導体集積回路装置の製造方法
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
US6627950B1 (en) 1988-12-27 2003-09-30 Siliconix, Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5296727A (en) * 1990-08-24 1994-03-22 Fujitsu Limited Double gate FET and process for manufacturing same
US5532179A (en) * 1992-07-24 1996-07-02 Siliconix Incorporated Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof
US5558313A (en) * 1992-07-24 1996-09-24 Siliconix Inorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5910669A (en) * 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
US5981344A (en) * 1992-07-24 1999-11-09 Siliconix Incorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5877538A (en) * 1995-06-02 1999-03-02 Silixonix Incorporated Bidirectional trench gated power MOSFET with submerged body bus extending underneath gate trench
US6096608A (en) * 1997-06-30 2000-08-01 Siliconix Incorporated Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench
US5923979A (en) * 1997-09-03 1999-07-13 Siliconix Incorporated Planar DMOS transistor fabricated by a three mask process

Also Published As

Publication number Publication date
JPS6159666B2 (enrdf_load_stackoverflow) 1986-12-17

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