JPS55146697A - Writing circuit for junction destructive p-rom - Google Patents

Writing circuit for junction destructive p-rom

Info

Publication number
JPS55146697A
JPS55146697A JP5348979A JP5348979A JPS55146697A JP S55146697 A JPS55146697 A JP S55146697A JP 5348979 A JP5348979 A JP 5348979A JP 5348979 A JP5348979 A JP 5348979A JP S55146697 A JPS55146697 A JP S55146697A
Authority
JP
Japan
Prior art keywords
base
rom
destructive
junction
pnpn element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5348979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS615236B2 (OSRAM
Inventor
Kenji Kawakami
Nobuhiko Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5348979A priority Critical patent/JPS55146697A/ja
Publication of JPS55146697A publication Critical patent/JPS55146697A/ja
Publication of JPS615236B2 publication Critical patent/JPS615236B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Read Only Memory (AREA)
JP5348979A 1979-05-02 1979-05-02 Writing circuit for junction destructive p-rom Granted JPS55146697A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5348979A JPS55146697A (en) 1979-05-02 1979-05-02 Writing circuit for junction destructive p-rom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5348979A JPS55146697A (en) 1979-05-02 1979-05-02 Writing circuit for junction destructive p-rom

Publications (2)

Publication Number Publication Date
JPS55146697A true JPS55146697A (en) 1980-11-15
JPS615236B2 JPS615236B2 (OSRAM) 1986-02-17

Family

ID=12944246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5348979A Granted JPS55146697A (en) 1979-05-02 1979-05-02 Writing circuit for junction destructive p-rom

Country Status (1)

Country Link
JP (1) JPS55146697A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109182260A (zh) * 2018-09-11 2019-01-11 邵勇 一种体外培养胎膜间充质干细胞的方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422629A (en) * 1987-07-17 1989-01-25 Nissan Motor Control device for automatic transmission
JPS6425555U (OSRAM) * 1987-08-06 1989-02-13
JPH0357554U (OSRAM) * 1989-10-12 1991-06-03
JPH04134955U (ja) * 1991-06-03 1992-12-15 日本電子機器株式会社 自動変速機制御装置
KR102239661B1 (ko) * 2019-10-30 2021-04-13 한국전력공사 시스템 및 감시장치의 제어 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109182260A (zh) * 2018-09-11 2019-01-11 邵勇 一种体外培养胎膜间充质干细胞的方法

Also Published As

Publication number Publication date
JPS615236B2 (OSRAM) 1986-02-17

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