JPS56168243A - Constant-voltage circuit - Google Patents

Constant-voltage circuit

Info

Publication number
JPS56168243A
JPS56168243A JP7127680A JP7127680A JPS56168243A JP S56168243 A JPS56168243 A JP S56168243A JP 7127680 A JP7127680 A JP 7127680A JP 7127680 A JP7127680 A JP 7127680A JP S56168243 A JPS56168243 A JP S56168243A
Authority
JP
Japan
Prior art keywords
constant
current
changed
emitter
variation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7127680A
Other languages
Japanese (ja)
Inventor
Hisao Kuwabara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7127680A priority Critical patent/JPS56168243A/en
Priority to GB8114574A priority patent/GB2077466B/en
Priority to DE19813120833 priority patent/DE3120833A1/en
Publication of JPS56168243A publication Critical patent/JPS56168243A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors

Abstract

PURPOSE: To reduce fluctuation of an output voltage by reducing the variation of a current flowing through a constant-voltage element in accordance with the variation of a constant-current power supply.
CONSTITUTION: A constant-current power supply 12, a resistance R and a diode stack 13 are connected in series between an input terminal 11 of voltage and an earth terminal. An emitter and a base of a pnp transister (TR)-Q is connected in parallel with a resistance R. A collector of the TRQ is grounded. In such circuit, when a current flowing through the resistance R is changed, the potential between the base and emitter of the TRQ is changed, then the emitter current is changed, and the base current is changed to cause a change of a current flowing through the diode stack 13. Hereby, even if a current in the constant-current power supply 12 is changed, the variation in the output voltage of a terminal 14 is reduced.
COPYRIGHT: (C)1981,JPO&Japio
JP7127680A 1980-05-28 1980-05-28 Constant-voltage circuit Pending JPS56168243A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP7127680A JPS56168243A (en) 1980-05-28 1980-05-28 Constant-voltage circuit
GB8114574A GB2077466B (en) 1980-05-28 1981-05-13 Constant voltage circuit
DE19813120833 DE3120833A1 (en) 1980-05-28 1981-05-26 CONSTANT VOLTAGE SWITCHING

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7127680A JPS56168243A (en) 1980-05-28 1980-05-28 Constant-voltage circuit

Publications (1)

Publication Number Publication Date
JPS56168243A true JPS56168243A (en) 1981-12-24

Family

ID=13456021

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7127680A Pending JPS56168243A (en) 1980-05-28 1980-05-28 Constant-voltage circuit

Country Status (3)

Country Link
JP (1) JPS56168243A (en)
DE (1) DE3120833A1 (en)
GB (1) GB2077466B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4580206A (en) * 1983-07-27 1986-04-01 Xerox Corporation Voltage clamp regulator
IT1215281B (en) * 1985-06-28 1990-01-31 Ates Componenti Elettron APPARATUS AND METHOD FOR PROTECTION FROM VOLTAGE / CURRENT TRANSITORS.
GB2275548B (en) * 1993-02-18 1996-05-01 Siemens Plessey Electronic Improvements in or relating to apparatus for suppressing radiated signal emissions

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4989143A (en) * 1972-12-28 1974-08-26

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4103220A (en) * 1977-04-04 1978-07-25 Gte Lenkurt Electric (Canada) Ltd. Low dissipation voltage regulator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4989143A (en) * 1972-12-28 1974-08-26

Also Published As

Publication number Publication date
GB2077466B (en) 1984-03-14
DE3120833A1 (en) 1982-02-04
GB2077466A (en) 1981-12-16

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