JPS55144497A - Preparing single crystal - Google Patents

Preparing single crystal

Info

Publication number
JPS55144497A
JPS55144497A JP5231779A JP5231779A JPS55144497A JP S55144497 A JPS55144497 A JP S55144497A JP 5231779 A JP5231779 A JP 5231779A JP 5231779 A JP5231779 A JP 5231779A JP S55144497 A JPS55144497 A JP S55144497A
Authority
JP
Japan
Prior art keywords
single crystal
growing
crystal
uniform
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5231779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6154760B2 (enrdf_load_stackoverflow
Inventor
Kazutaka Terajima
Shoichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5231779A priority Critical patent/JPS55144497A/ja
Publication of JPS55144497A publication Critical patent/JPS55144497A/ja
Publication of JPS6154760B2 publication Critical patent/JPS6154760B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP5231779A 1979-04-27 1979-04-27 Preparing single crystal Granted JPS55144497A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5231779A JPS55144497A (en) 1979-04-27 1979-04-27 Preparing single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5231779A JPS55144497A (en) 1979-04-27 1979-04-27 Preparing single crystal

Publications (2)

Publication Number Publication Date
JPS55144497A true JPS55144497A (en) 1980-11-11
JPS6154760B2 JPS6154760B2 (enrdf_load_stackoverflow) 1986-11-25

Family

ID=12911399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5231779A Granted JPS55144497A (en) 1979-04-27 1979-04-27 Preparing single crystal

Country Status (1)

Country Link
JP (1) JPS55144497A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57156396A (en) * 1981-03-16 1982-09-27 Sumitomo Electric Ind Ltd Pulling up of single crystal at high pressure
JPS604573U (ja) * 1983-06-21 1985-01-14 日本電気株式会社 結晶引上げ装置
JPH0859247A (ja) * 1994-08-19 1996-03-05 Natl Inst For Res In Inorg Mater 合成炉装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SOLID STATE TECHNOLOGY=1974 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57156396A (en) * 1981-03-16 1982-09-27 Sumitomo Electric Ind Ltd Pulling up of single crystal at high pressure
JPS604573U (ja) * 1983-06-21 1985-01-14 日本電気株式会社 結晶引上げ装置
JPH0859247A (ja) * 1994-08-19 1996-03-05 Natl Inst For Res In Inorg Mater 合成炉装置

Also Published As

Publication number Publication date
JPS6154760B2 (enrdf_load_stackoverflow) 1986-11-25

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