JPS55134979A - Manufacturing of field-effect transistor - Google Patents

Manufacturing of field-effect transistor

Info

Publication number
JPS55134979A
JPS55134979A JP4283779A JP4283779A JPS55134979A JP S55134979 A JPS55134979 A JP S55134979A JP 4283779 A JP4283779 A JP 4283779A JP 4283779 A JP4283779 A JP 4283779A JP S55134979 A JPS55134979 A JP S55134979A
Authority
JP
Japan
Prior art keywords
layer
film
prescribed
etched
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4283779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6217391B2 (enrdf_load_stackoverflow
Inventor
Kazuyoshi Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4283779A priority Critical patent/JPS55134979A/ja
Publication of JPS55134979A publication Critical patent/JPS55134979A/ja
Publication of JPS6217391B2 publication Critical patent/JPS6217391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP4283779A 1979-04-09 1979-04-09 Manufacturing of field-effect transistor Granted JPS55134979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4283779A JPS55134979A (en) 1979-04-09 1979-04-09 Manufacturing of field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4283779A JPS55134979A (en) 1979-04-09 1979-04-09 Manufacturing of field-effect transistor

Publications (2)

Publication Number Publication Date
JPS55134979A true JPS55134979A (en) 1980-10-21
JPS6217391B2 JPS6217391B2 (enrdf_load_stackoverflow) 1987-04-17

Family

ID=12647077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4283779A Granted JPS55134979A (en) 1979-04-09 1979-04-09 Manufacturing of field-effect transistor

Country Status (1)

Country Link
JP (1) JPS55134979A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204175A (en) * 1981-06-11 1982-12-14 Nec Corp Manufacture of semiconductor device
JPS5879774A (ja) * 1981-11-06 1983-05-13 Fujitsu Ltd 半導体装置
US6372613B2 (en) 1997-05-29 2002-04-16 Nec Corporation Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50152677A (enrdf_load_stackoverflow) * 1974-05-28 1975-12-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50152677A (enrdf_load_stackoverflow) * 1974-05-28 1975-12-08

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204175A (en) * 1981-06-11 1982-12-14 Nec Corp Manufacture of semiconductor device
JPS5879774A (ja) * 1981-11-06 1983-05-13 Fujitsu Ltd 半導体装置
US6372613B2 (en) 1997-05-29 2002-04-16 Nec Corporation Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor

Also Published As

Publication number Publication date
JPS6217391B2 (enrdf_load_stackoverflow) 1987-04-17

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