JPS55128833A - Method of making minute pattern - Google Patents

Method of making minute pattern

Info

Publication number
JPS55128833A
JPS55128833A JP3747879A JP3747879A JPS55128833A JP S55128833 A JPS55128833 A JP S55128833A JP 3747879 A JP3747879 A JP 3747879A JP 3747879 A JP3747879 A JP 3747879A JP S55128833 A JPS55128833 A JP S55128833A
Authority
JP
Japan
Prior art keywords
film
resist film
pattern
electron beam
chromium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3747879A
Other languages
Japanese (ja)
Inventor
Teruhiko Yamazaki
Yoshiki Suzuki
Jun Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3747879A priority Critical patent/JPS55128833A/en
Publication of JPS55128833A publication Critical patent/JPS55128833A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To manufacture a defectless mask, by laminating a positive type electron beam resist film and an ultraviolet ray sensitive resist film with each other, effecting exposure to ultraviolet rays, selectively removing the ultraviolet ray sensitive resist film and minutely and selectively removing the exposed electron beam resist film.
CONSTITUTION: To make a minute pattern in a chromium mask, a thin chromium film 2 is coated by evaporation on a glass plate 1 first. A positive type electron beam resist film 3 is coated on the thin chromium film 2 and prebroken. A positive type ultraviolet ray sensitive resist film 4 is coated on the resist film 3 and prebroken. Ultraviolet rays are selectively irradiated upon the film 4. Development is effected by an alkaline aqueous solution. A band-like pattern is drawn on the center of the band-like part of the exposed film 3 by using an electron beam. Development is effected to provide a desired resist pattern. This pattern is used as a mask to etch the thin chromium film 2. The films 3, 4 are removed. The desired minute chromium pattern is thus made.
COPYRIGHT: (C)1980,JPO&Japio
JP3747879A 1979-03-26 1979-03-26 Method of making minute pattern Pending JPS55128833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3747879A JPS55128833A (en) 1979-03-26 1979-03-26 Method of making minute pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3747879A JPS55128833A (en) 1979-03-26 1979-03-26 Method of making minute pattern

Publications (1)

Publication Number Publication Date
JPS55128833A true JPS55128833A (en) 1980-10-06

Family

ID=12498620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3747879A Pending JPS55128833A (en) 1979-03-26 1979-03-26 Method of making minute pattern

Country Status (1)

Country Link
JP (1) JPS55128833A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451122A (en) * 1980-12-29 1984-05-29 Beckman Instruments, Inc. Multicompartment electro-optic display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451122A (en) * 1980-12-29 1984-05-29 Beckman Instruments, Inc. Multicompartment electro-optic display device

Similar Documents

Publication Publication Date Title
JPS5593225A (en) Forming method of minute pattern
JPS5692536A (en) Pattern formation method
JPS5630129A (en) Manufacture of photomask
JPS55128833A (en) Method of making minute pattern
JPS5621328A (en) Method of making pattern
JPS5596952A (en) Production of photomask
JPS5443681A (en) Electron beam light-exposing method
JPS55143560A (en) Manufacture of photomask
JPS5559722A (en) Producing method of electron beam drawing photomask
JPS5655943A (en) Pattern forming method
JPS55144247A (en) Preparation of photomask
JPS57109331A (en) Formation of resist pattern
JPS5741637A (en) Microstep tablet
JPS57112025A (en) Formation of pattern
JPS5580318A (en) Electron-beam exposure
JPS5655947A (en) Photomask for far ultraviolet rays
JPS5568634A (en) Manufacture of mask for x-ray exposure
JPS5748731A (en) Manufacture of mask
JPS55132040A (en) Pattern forming method
JPS561534A (en) Manufacture of photomask
JPS56114942A (en) High energy beam sensitive resist material and its using method
JPS57185436A (en) Production of x-ray exposure mask
JPS5616126A (en) Exposing method
JPS55128831A (en) Method of making photoresist film pattern
JPS5437579A (en) Chrome plate