JPS5512726A - Process for manufacturing semiconductor substrate - Google Patents

Process for manufacturing semiconductor substrate

Info

Publication number
JPS5512726A
JPS5512726A JP8504878A JP8504878A JPS5512726A JP S5512726 A JPS5512726 A JP S5512726A JP 8504878 A JP8504878 A JP 8504878A JP 8504878 A JP8504878 A JP 8504878A JP S5512726 A JPS5512726 A JP S5512726A
Authority
JP
Japan
Prior art keywords
film
nitrified
quality
changed
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8504878A
Other languages
English (en)
Inventor
Shigeru Morita
Norio Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8504878A priority Critical patent/JPS5512726A/ja
Publication of JPS5512726A publication Critical patent/JPS5512726A/ja
Pending legal-status Critical Current

Links

JP8504878A 1978-07-14 1978-07-14 Process for manufacturing semiconductor substrate Pending JPS5512726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8504878A JPS5512726A (en) 1978-07-14 1978-07-14 Process for manufacturing semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8504878A JPS5512726A (en) 1978-07-14 1978-07-14 Process for manufacturing semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS5512726A true JPS5512726A (en) 1980-01-29

Family

ID=13847780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8504878A Pending JPS5512726A (en) 1978-07-14 1978-07-14 Process for manufacturing semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS5512726A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5849405U (ja) * 1981-09-28 1983-04-04 株式会社タムラ製作所 コイルボビン
JPS6178112A (ja) * 1984-09-25 1986-04-21 Matsushita Electric Works Ltd コイルボビンの端子ピン固定方法
JPS6350463U (ja) * 1986-09-19 1988-04-05

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5849405U (ja) * 1981-09-28 1983-04-04 株式会社タムラ製作所 コイルボビン
JPS6178112A (ja) * 1984-09-25 1986-04-21 Matsushita Electric Works Ltd コイルボビンの端子ピン固定方法
JPS6350463U (ja) * 1986-09-19 1988-04-05

Similar Documents

Publication Publication Date Title
US3657030A (en) Technique for masking silicon nitride during phosphoric acid etching
JPS5512726A (en) Process for manufacturing semiconductor substrate
JPS5737830A (en) Manufacture of semiconductor device
JPS5772333A (en) Manufacture of semiconductor device
JPS55166928A (en) Manufacture of semiconductor device
JPS55110037A (en) Method for making semiconductor device
JPS5731164A (en) Manufacture of semiconductor device
JPS55164077A (en) Method for etching by gas plasma
JPS57138139A (en) Etching method for insulating film of semiconductor device
JPS5693315A (en) Manufacture of semiconductor device
JPS6474719A (en) Manufacture of semiconductor device
JPS5548950A (en) Manufacturing of semiconductor device
JPS56137619A (en) Impurity diffusion into semiconductor
JPS54137975A (en) Etching method of silicon substrate
JPS5633836A (en) Patterning method of gaas thermal oxide film
JPS57193028A (en) Manufacture of semiconductor device
JPS5737838A (en) Manufacture of semiconductor device
JPS5673440A (en) Manufacture of semiconductor device
JPS647566A (en) Manufacture of thin film transistor
JPS5687342A (en) Manufacture of semiconductor device
JPS5726171A (en) Dry etching method for molybdenum
JPS5648150A (en) Manufacture of semiconductor device
JPS5539634A (en) Manufacture of semiconductor
JPS5596680A (en) Method of fabricating mos semiconductor device
JPS5650540A (en) Formation of selectively oxidized separating region