JPS5512726A - Process for manufacturing semiconductor substrate - Google Patents
Process for manufacturing semiconductor substrateInfo
- Publication number
- JPS5512726A JPS5512726A JP8504878A JP8504878A JPS5512726A JP S5512726 A JPS5512726 A JP S5512726A JP 8504878 A JP8504878 A JP 8504878A JP 8504878 A JP8504878 A JP 8504878A JP S5512726 A JPS5512726 A JP S5512726A
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitrified
- quality
- changed
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8504878A JPS5512726A (en) | 1978-07-14 | 1978-07-14 | Process for manufacturing semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8504878A JPS5512726A (en) | 1978-07-14 | 1978-07-14 | Process for manufacturing semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5512726A true JPS5512726A (en) | 1980-01-29 |
Family
ID=13847780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8504878A Pending JPS5512726A (en) | 1978-07-14 | 1978-07-14 | Process for manufacturing semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5512726A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5849405U (ja) * | 1981-09-28 | 1983-04-04 | 株式会社タムラ製作所 | コイルボビン |
JPS6178112A (ja) * | 1984-09-25 | 1986-04-21 | Matsushita Electric Works Ltd | コイルボビンの端子ピン固定方法 |
JPS6350463U (ja) * | 1986-09-19 | 1988-04-05 |
-
1978
- 1978-07-14 JP JP8504878A patent/JPS5512726A/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5849405U (ja) * | 1981-09-28 | 1983-04-04 | 株式会社タムラ製作所 | コイルボビン |
JPS6178112A (ja) * | 1984-09-25 | 1986-04-21 | Matsushita Electric Works Ltd | コイルボビンの端子ピン固定方法 |
JPS6350463U (ja) * | 1986-09-19 | 1988-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3657030A (en) | Technique for masking silicon nitride during phosphoric acid etching | |
JPS5512726A (en) | Process for manufacturing semiconductor substrate | |
JPS5737830A (en) | Manufacture of semiconductor device | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS55166928A (en) | Manufacture of semiconductor device | |
JPS55110037A (en) | Method for making semiconductor device | |
JPS5731164A (en) | Manufacture of semiconductor device | |
JPS55164077A (en) | Method for etching by gas plasma | |
JPS57138139A (en) | Etching method for insulating film of semiconductor device | |
JPS5693315A (en) | Manufacture of semiconductor device | |
JPS6474719A (en) | Manufacture of semiconductor device | |
JPS5548950A (en) | Manufacturing of semiconductor device | |
JPS56137619A (en) | Impurity diffusion into semiconductor | |
JPS54137975A (en) | Etching method of silicon substrate | |
JPS5633836A (en) | Patterning method of gaas thermal oxide film | |
JPS57193028A (en) | Manufacture of semiconductor device | |
JPS5737838A (en) | Manufacture of semiconductor device | |
JPS5673440A (en) | Manufacture of semiconductor device | |
JPS647566A (en) | Manufacture of thin film transistor | |
JPS5687342A (en) | Manufacture of semiconductor device | |
JPS5726171A (en) | Dry etching method for molybdenum | |
JPS5648150A (en) | Manufacture of semiconductor device | |
JPS5539634A (en) | Manufacture of semiconductor | |
JPS5596680A (en) | Method of fabricating mos semiconductor device | |
JPS5650540A (en) | Formation of selectively oxidized separating region |