JPS55125691A - Distributed feedback type semiconductor laser - Google Patents
Distributed feedback type semiconductor laserInfo
- Publication number
- JPS55125691A JPS55125691A JP3374179A JP3374179A JPS55125691A JP S55125691 A JPS55125691 A JP S55125691A JP 3374179 A JP3374179 A JP 3374179A JP 3374179 A JP3374179 A JP 3374179A JP S55125691 A JPS55125691 A JP S55125691A
- Authority
- JP
- Japan
- Prior art keywords
- type
- coated
- groove
- substrate
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000010355 oscillation Effects 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3374179A JPS55125691A (en) | 1979-03-22 | 1979-03-22 | Distributed feedback type semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3374179A JPS55125691A (en) | 1979-03-22 | 1979-03-22 | Distributed feedback type semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55125691A true JPS55125691A (en) | 1980-09-27 |
| JPS6136719B2 JPS6136719B2 (enrdf_load_stackoverflow) | 1986-08-20 |
Family
ID=12394828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3374179A Granted JPS55125691A (en) | 1979-03-22 | 1979-03-22 | Distributed feedback type semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55125691A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59126693A (ja) * | 1983-01-10 | 1984-07-21 | Fujikura Ltd | 分布帰還型半導体レ−ザおよびその製造方法 |
| JPS60111488A (ja) * | 1983-11-22 | 1985-06-17 | Agency Of Ind Science & Technol | 波長制御型半導体レーザの発振方法 |
-
1979
- 1979-03-22 JP JP3374179A patent/JPS55125691A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59126693A (ja) * | 1983-01-10 | 1984-07-21 | Fujikura Ltd | 分布帰還型半導体レ−ザおよびその製造方法 |
| JPS60111488A (ja) * | 1983-11-22 | 1985-06-17 | Agency Of Ind Science & Technol | 波長制御型半導体レーザの発振方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6136719B2 (enrdf_load_stackoverflow) | 1986-08-20 |
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