JPS55121652A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55121652A
JPS55121652A JP2896379A JP2896379A JPS55121652A JP S55121652 A JPS55121652 A JP S55121652A JP 2896379 A JP2896379 A JP 2896379A JP 2896379 A JP2896379 A JP 2896379A JP S55121652 A JPS55121652 A JP S55121652A
Authority
JP
Japan
Prior art keywords
layer
oxide film
silicon layer
isolating
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2896379A
Other languages
Japanese (ja)
Inventor
Masatoshi Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP2896379A priority Critical patent/JPS55121652A/en
Publication of JPS55121652A publication Critical patent/JPS55121652A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To eliminate lateral expansion of an oxide film on the semiconductor layer formed on a sapphire substrate in a semiconductor device by selectively implanting oxygen ion, heating and oxidizing the semiconductor layer to form the oxide film for short time when isolating an SOS oxide film. CONSTITUTION:A monocrystalline silicon layer 2 is grown on a sapphire substrate 1, an SiO2 film 3 and an SiN film 4 are sequentially formed on the layer 2, and an opening 5 is formed thereon. After the exposed silicon layer is slightly etched, oxygen atom is ion implanted thereon to form an implantation region 12. Then, the region 12 is heated to form an isolating SiO2 layer 13 in the ion implantation region 12. The layer 13 is heated in oxygen atmosphere to simultaneously oxidize the surface of the silicon layer. Since the oxidation is thus proceeded from the interior of the silicon layer, it can shorten the time required for the oxidation so as to eliminate the lateral expansion of the oxide film. Accordingly, it can form an isolating oxide film of infinitesimal structure.
JP2896379A 1979-03-13 1979-03-13 Manufacture of semiconductor device Pending JPS55121652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2896379A JPS55121652A (en) 1979-03-13 1979-03-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2896379A JPS55121652A (en) 1979-03-13 1979-03-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55121652A true JPS55121652A (en) 1980-09-18

Family

ID=12263061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2896379A Pending JPS55121652A (en) 1979-03-13 1979-03-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55121652A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271245A (en) * 1986-09-12 1987-04-01 Toshiba Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271245A (en) * 1986-09-12 1987-04-01 Toshiba Corp Manufacture of semiconductor device

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