JPS55120161A - Semiconductor logic circuit device - Google Patents

Semiconductor logic circuit device

Info

Publication number
JPS55120161A
JPS55120161A JP2785279A JP2785279A JPS55120161A JP S55120161 A JPS55120161 A JP S55120161A JP 2785279 A JP2785279 A JP 2785279A JP 2785279 A JP2785279 A JP 2785279A JP S55120161 A JPS55120161 A JP S55120161A
Authority
JP
Japan
Prior art keywords
type
regions
region
becoming
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2785279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6225268B2 (enrdf_load_stackoverflow
Inventor
Masahiro Yoneda
Saburo Osaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2785279A priority Critical patent/JPS55120161A/ja
Publication of JPS55120161A publication Critical patent/JPS55120161A/ja
Publication of JPS6225268B2 publication Critical patent/JPS6225268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2785279A 1979-03-09 1979-03-09 Semiconductor logic circuit device Granted JPS55120161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2785279A JPS55120161A (en) 1979-03-09 1979-03-09 Semiconductor logic circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2785279A JPS55120161A (en) 1979-03-09 1979-03-09 Semiconductor logic circuit device

Publications (2)

Publication Number Publication Date
JPS55120161A true JPS55120161A (en) 1980-09-16
JPS6225268B2 JPS6225268B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=12232442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2785279A Granted JPS55120161A (en) 1979-03-09 1979-03-09 Semiconductor logic circuit device

Country Status (1)

Country Link
JP (1) JPS55120161A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6225268B2 (enrdf_load_stackoverflow) 1987-06-02

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