JPS5561057A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5561057A
JPS5561057A JP13407378A JP13407378A JPS5561057A JP S5561057 A JPS5561057 A JP S5561057A JP 13407378 A JP13407378 A JP 13407378A JP 13407378 A JP13407378 A JP 13407378A JP S5561057 A JPS5561057 A JP S5561057A
Authority
JP
Japan
Prior art keywords
layer
injector
base layer
resistance
effective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13407378A
Other languages
Japanese (ja)
Inventor
Kimimaro Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13407378A priority Critical patent/JPS5561057A/en
Publication of JPS5561057A publication Critical patent/JPS5561057A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase fanout number and switching speed by keeping an effective base layer out of common base and injector of an inverter high in resistance and a common reactive base layer and an injector layer low in resistance. CONSTITUTION:A p<+>-type common base layer 2 and an injector 1 are formed through thermal diffusion from p<+>-type poly-Si11 etched selectively. An oxidized film 13 produced in this case is etched to a mask, ion is injected at high energy to form an n-layer, ion is then injected at low energy to form a p-layer, and an n<+>- type ohm connection layer 3 is finally provided through thermal diffusion. According to this constitution, since the effective emitter layer 6 is higher in density than the effective base layer 5, an injection efficiency of a reverse operating npn transistor is improved, a parasitic base resistance decreases, a fanout can be increased, and a switching speed increases.
JP13407378A 1978-10-31 1978-10-31 Semiconductor integrated circuit device Pending JPS5561057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13407378A JPS5561057A (en) 1978-10-31 1978-10-31 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13407378A JPS5561057A (en) 1978-10-31 1978-10-31 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5561057A true JPS5561057A (en) 1980-05-08

Family

ID=15119742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13407378A Pending JPS5561057A (en) 1978-10-31 1978-10-31 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5561057A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5150585A (en) * 1974-10-30 1976-05-04 Tokyo Shibaura Electric Co
JPS5183479A (en) * 1975-01-20 1976-07-22 Tokyo Shibaura Electric Co

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5150585A (en) * 1974-10-30 1976-05-04 Tokyo Shibaura Electric Co
JPS5183479A (en) * 1975-01-20 1976-07-22 Tokyo Shibaura Electric Co

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