JPS6225268B2 - - Google Patents

Info

Publication number
JPS6225268B2
JPS6225268B2 JP54027852A JP2785279A JPS6225268B2 JP S6225268 B2 JPS6225268 B2 JP S6225268B2 JP 54027852 A JP54027852 A JP 54027852A JP 2785279 A JP2785279 A JP 2785279A JP S6225268 B2 JPS6225268 B2 JP S6225268B2
Authority
JP
Japan
Prior art keywords
transistor
semiconductor
base
region
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54027852A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55120161A (en
Inventor
Masahiro Yoneda
Saburo Oosaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2785279A priority Critical patent/JPS55120161A/ja
Publication of JPS55120161A publication Critical patent/JPS55120161A/ja
Publication of JPS6225268B2 publication Critical patent/JPS6225268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2785279A 1979-03-09 1979-03-09 Semiconductor logic circuit device Granted JPS55120161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2785279A JPS55120161A (en) 1979-03-09 1979-03-09 Semiconductor logic circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2785279A JPS55120161A (en) 1979-03-09 1979-03-09 Semiconductor logic circuit device

Publications (2)

Publication Number Publication Date
JPS55120161A JPS55120161A (en) 1980-09-16
JPS6225268B2 true JPS6225268B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=12232442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2785279A Granted JPS55120161A (en) 1979-03-09 1979-03-09 Semiconductor logic circuit device

Country Status (1)

Country Link
JP (1) JPS55120161A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS55120161A (en) 1980-09-16

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