JPS55120131A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55120131A
JPS55120131A JP2786979A JP2786979A JPS55120131A JP S55120131 A JPS55120131 A JP S55120131A JP 2786979 A JP2786979 A JP 2786979A JP 2786979 A JP2786979 A JP 2786979A JP S55120131 A JPS55120131 A JP S55120131A
Authority
JP
Japan
Prior art keywords
epitaxial layer
semiconductor device
neutrons
type impurities
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2786979A
Other languages
Japanese (ja)
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2786979A priority Critical patent/JPS55120131A/en
Publication of JPS55120131A publication Critical patent/JPS55120131A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To eliminate the action of p-type impurities by transforming Al which has intruded in Si into Si by the radiation of neutrons in forming an Si epitaxial layer on an insulating-type single-crystal substrate whose main component is Al2O3. CONSTITUTION:An Si epitaxial layer is formed on a sapphire substrate by the thermal decomposition of SiH4 gas. When neutrons are radiated to the epitaxial layer, Al is transformed into Si and a minute amount of Mg. Since Al does not act as p-type impurities, the Si layer can be made very thin, and the functioning speed of the semiconductor device can be remarkably accelerated.
JP2786979A 1979-03-10 1979-03-10 Manufacture of semiconductor device Pending JPS55120131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2786979A JPS55120131A (en) 1979-03-10 1979-03-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2786979A JPS55120131A (en) 1979-03-10 1979-03-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55120131A true JPS55120131A (en) 1980-09-16

Family

ID=12232895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2786979A Pending JPS55120131A (en) 1979-03-10 1979-03-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55120131A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212100A (en) * 1991-12-04 1993-05-18 Texas Instruments Incorporated P-well CMOS process using neutron activated doped N-/N+ silicon substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212100A (en) * 1991-12-04 1993-05-18 Texas Instruments Incorporated P-well CMOS process using neutron activated doped N-/N+ silicon substrates

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