JPS551149A - Semiconductor device - Google Patents

Abstract

PURPOSE: To provide a semiconductor device wherein separating regions and a buried region are provided, two semiconductor layers are laminated thereon and caused to grow and subjected to heat treatment to integrate separating regions, and an element is formed on the separated region, thereby to obtain a high pressure resisting element.

CONSTITUTION: Two P+ resions 12 are diffusion-formed on a P type Si substrate and an N⁺ type buried region 13 is provided on the substrate 11 between said two regions. Then, an N type layer 16 is caused to grow in vapor phase on the whole surface of the substrate 11, and on said N type layer 16 two P type regions 17 corresponding to the regions 12 are provided. Further, on the whole surface of said layer 16 an N type layer 18 is caused to grow in vapor phase and on said N type layer 18, where P type regions 19 are formed in correspondence to said regions 17. Thereafter, these regions are subjected to a high temperature heat treatment for a short period of time or a low-temperature heat treatment for a long period of time to cause the region 12, 17, and 19 to rise and fall respectively, thereby to integrated them, and the region 13 is swollen upward. Then, an element region 20 is formd in the layer 18 separated by integration. According to this arrangement, a depletion layer from the region 20 does not come into contact with the region 13, and the pressure resistance is improved.

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