JPS55113195A - Reading method of memory unit - Google Patents
Reading method of memory unitInfo
- Publication number
- JPS55113195A JPS55113195A JP2035579A JP2035579A JPS55113195A JP S55113195 A JPS55113195 A JP S55113195A JP 2035579 A JP2035579 A JP 2035579A JP 2035579 A JP2035579 A JP 2035579A JP S55113195 A JPS55113195 A JP S55113195A
- Authority
- JP
- Japan
- Prior art keywords
- read
- reference voltage
- level
- power consumption
- memory cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2035579A JPS55113195A (en) | 1979-02-23 | 1979-02-23 | Reading method of memory unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2035579A JPS55113195A (en) | 1979-02-23 | 1979-02-23 | Reading method of memory unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55113195A true JPS55113195A (en) | 1980-09-01 |
| JPS6117076B2 JPS6117076B2 (enrdf_load_stackoverflow) | 1986-05-06 |
Family
ID=12024797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2035579A Granted JPS55113195A (en) | 1979-02-23 | 1979-02-23 | Reading method of memory unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55113195A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5880190A (ja) * | 1981-10-19 | 1983-05-14 | フエアチヤイルド カメラ アンド インストルメント コ−ポレ−シヨン | ダイナミック読取基準電圧発生器 |
| US4751683A (en) * | 1984-10-22 | 1988-06-14 | Mitsubishi Denki Kabushiki Kaisha | Static semiconductor memory device comprising word lines each operating at three different voltage levels |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0575202U (ja) * | 1992-03-13 | 1993-10-15 | 株式会社アジクリエーション | ごみ箱 |
-
1979
- 1979-02-23 JP JP2035579A patent/JPS55113195A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5880190A (ja) * | 1981-10-19 | 1983-05-14 | フエアチヤイルド カメラ アンド インストルメント コ−ポレ−シヨン | ダイナミック読取基準電圧発生器 |
| US4751683A (en) * | 1984-10-22 | 1988-06-14 | Mitsubishi Denki Kabushiki Kaisha | Static semiconductor memory device comprising word lines each operating at three different voltage levels |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6117076B2 (enrdf_load_stackoverflow) | 1986-05-06 |
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