JPS55110777A - Plasma treating apparatus - Google Patents

Plasma treating apparatus

Info

Publication number
JPS55110777A
JPS55110777A JP1926379A JP1926379A JPS55110777A JP S55110777 A JPS55110777 A JP S55110777A JP 1926379 A JP1926379 A JP 1926379A JP 1926379 A JP1926379 A JP 1926379A JP S55110777 A JPS55110777 A JP S55110777A
Authority
JP
Japan
Prior art keywords
substrate plate
high frequency
movement
container
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1926379A
Other languages
Japanese (ja)
Inventor
Takeshi Sakashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1926379A priority Critical patent/JPS55110777A/en
Publication of JPS55110777A publication Critical patent/JPS55110777A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce treatment irregularity by carrying out plasma treatment between substrate plates or within a substrate plate uniformly by a mechanism wherein, in case of imparting reciprocal movement to an axial direction of a vacuum container and rotary movement around an axis to a substrate plate putting table, at least the former movement is imparted.
CONSTITUTION: A support 2 for supporting a substrate plate 1 is put on a substrate plate putting table 24 and, after a top cover 11 is put on a vacuum container 10 to close and evacuated from an exhaust port 20, a high purity gas is introduced from a gas introducing port 19. When gas pressure in a container 10 becomes constant, a rotary shaft 21 is rotated at a constant angular speed. Thereby, the movement of a guide pin 25 is initiated on a guide groove 22 and a container 10 is reciprocally moved to an axial direction because the rotation of a putting table 24 attached by a pin 25 is prevented by a stopper 29. Subsequently, high frequency electric power is applied to a high frequency electrode 18 by operating a high frequency oscillator 17 to generate plasma and a substrate plate 1 is subjected to etching treatment by plasma for a predetermined period.
COPYRIGHT: (C)1980,JPO&Japio
JP1926379A 1979-02-20 1979-02-20 Plasma treating apparatus Pending JPS55110777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1926379A JPS55110777A (en) 1979-02-20 1979-02-20 Plasma treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1926379A JPS55110777A (en) 1979-02-20 1979-02-20 Plasma treating apparatus

Publications (1)

Publication Number Publication Date
JPS55110777A true JPS55110777A (en) 1980-08-26

Family

ID=11994545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1926379A Pending JPS55110777A (en) 1979-02-20 1979-02-20 Plasma treating apparatus

Country Status (1)

Country Link
JP (1) JPS55110777A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168230A (en) * 1982-03-30 1983-10-04 Fujitsu Ltd Microwave plasma processing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168230A (en) * 1982-03-30 1983-10-04 Fujitsu Ltd Microwave plasma processing method

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