JPS55110033A - Epitaxial layer-growing device - Google Patents
Epitaxial layer-growing deviceInfo
- Publication number
- JPS55110033A JPS55110033A JP1812279A JP1812279A JPS55110033A JP S55110033 A JPS55110033 A JP S55110033A JP 1812279 A JP1812279 A JP 1812279A JP 1812279 A JP1812279 A JP 1812279A JP S55110033 A JPS55110033 A JP S55110033A
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- tube
- auxiliary
- gas
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1812279A JPS55110033A (en) | 1979-02-19 | 1979-02-19 | Epitaxial layer-growing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1812279A JPS55110033A (en) | 1979-02-19 | 1979-02-19 | Epitaxial layer-growing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55110033A true JPS55110033A (en) | 1980-08-25 |
Family
ID=11962792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1812279A Pending JPS55110033A (en) | 1979-02-19 | 1979-02-19 | Epitaxial layer-growing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55110033A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5785238A (en) * | 1980-11-17 | 1982-05-27 | Seiko Epson Corp | Reaction tube |
JPS57159015A (en) * | 1981-03-26 | 1982-10-01 | Nec Corp | Film growing device |
JPS6167915A (ja) * | 1984-09-12 | 1986-04-08 | Hitachi Tokyo Electronics Co Ltd | プラズマcvd装置 |
JPS61224410A (ja) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | 減圧cvd薄膜形成装置 |
US4989543A (en) * | 1987-10-15 | 1991-02-05 | Solems (S.A.) | Process and means for producing films for use in electronics and/or optoelectronics using plasma |
US4991540A (en) * | 1987-06-30 | 1991-02-12 | Aixtron Gmbh | Quartz-glass reactor for MOCVD systems |
-
1979
- 1979-02-19 JP JP1812279A patent/JPS55110033A/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5785238A (en) * | 1980-11-17 | 1982-05-27 | Seiko Epson Corp | Reaction tube |
JPS57159015A (en) * | 1981-03-26 | 1982-10-01 | Nec Corp | Film growing device |
JPS6167915A (ja) * | 1984-09-12 | 1986-04-08 | Hitachi Tokyo Electronics Co Ltd | プラズマcvd装置 |
JPH0556647B2 (ja) * | 1984-09-12 | 1993-08-20 | Hitachi Tokyo Electronics | |
JPS61224410A (ja) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | 減圧cvd薄膜形成装置 |
US4991540A (en) * | 1987-06-30 | 1991-02-12 | Aixtron Gmbh | Quartz-glass reactor for MOCVD systems |
US4989543A (en) * | 1987-10-15 | 1991-02-05 | Solems (S.A.) | Process and means for producing films for use in electronics and/or optoelectronics using plasma |
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