JPS55108737A - Method for manufacture of semiconductor device - Google Patents

Method for manufacture of semiconductor device

Info

Publication number
JPS55108737A
JPS55108737A JP1559979A JP1559979A JPS55108737A JP S55108737 A JPS55108737 A JP S55108737A JP 1559979 A JP1559979 A JP 1559979A JP 1559979 A JP1559979 A JP 1559979A JP S55108737 A JPS55108737 A JP S55108737A
Authority
JP
Japan
Prior art keywords
defective
substrate
defect
resist film
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1559979A
Other languages
Japanese (ja)
Inventor
Tsunehiro Naganami
Nobuki Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1559979A priority Critical patent/JPS55108737A/en
Publication of JPS55108737A publication Critical patent/JPS55108737A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To correct defective products and use them by a method wherein a defective substrate coated with a positive resist is subjected to step-and-repeat by using a corrective reticle larger than a defect, after it is developed, the defect is removed.
CONSTITUTION: Required pattern 2 and defective parts 3, 4 exist in the chip pattern region. For correction, first, a corrective reticle larger than the size of the defect is formed. On the other hand, for the defective substrate, a positive resist film is formed to cover pattern 2. Reticles 5, 5' and the defective substrate are fitted to the step-and-repeater. After they are subjected to repeat exposure, they are developed. By this, defects 3, 4 of the substrate are exposed and the remaining part is covered with resist film. Next, by sputtering, the substrate having defects 3, 4 is provided with a film of the same chip pattern as used. After this, the resist film is removed, and the defective parts are filled.
COPYRIGHT: (C)1980,JPO&Japio
JP1559979A 1979-02-13 1979-02-13 Method for manufacture of semiconductor device Pending JPS55108737A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1559979A JPS55108737A (en) 1979-02-13 1979-02-13 Method for manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1559979A JPS55108737A (en) 1979-02-13 1979-02-13 Method for manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55108737A true JPS55108737A (en) 1980-08-21

Family

ID=11893174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1559979A Pending JPS55108737A (en) 1979-02-13 1979-02-13 Method for manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55108737A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5220231A (en) * 1975-08-08 1977-02-16 Toshiba Ray O Vac Layerrbuilt dry element battery

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5220231A (en) * 1975-08-08 1977-02-16 Toshiba Ray O Vac Layerrbuilt dry element battery

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