JPS55108732A - Manufacture of ohmic electrode - Google Patents

Manufacture of ohmic electrode

Info

Publication number
JPS55108732A
JPS55108732A JP1665579A JP1665579A JPS55108732A JP S55108732 A JPS55108732 A JP S55108732A JP 1665579 A JP1665579 A JP 1665579A JP 1665579 A JP1665579 A JP 1665579A JP S55108732 A JPS55108732 A JP S55108732A
Authority
JP
Japan
Prior art keywords
heat treatment
inp
reaction compound
evaporation
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1665579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6138849B2 (enrdf_load_stackoverflow
Inventor
Masaki Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1665579A priority Critical patent/JPS55108732A/ja
Publication of JPS55108732A publication Critical patent/JPS55108732A/ja
Publication of JPS6138849B2 publication Critical patent/JPS6138849B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP1665579A 1979-02-14 1979-02-14 Manufacture of ohmic electrode Granted JPS55108732A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1665579A JPS55108732A (en) 1979-02-14 1979-02-14 Manufacture of ohmic electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1665579A JPS55108732A (en) 1979-02-14 1979-02-14 Manufacture of ohmic electrode

Publications (2)

Publication Number Publication Date
JPS55108732A true JPS55108732A (en) 1980-08-21
JPS6138849B2 JPS6138849B2 (enrdf_load_stackoverflow) 1986-09-01

Family

ID=11922349

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1665579A Granted JPS55108732A (en) 1979-02-14 1979-02-14 Manufacture of ohmic electrode

Country Status (1)

Country Link
JP (1) JPS55108732A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252134A (ja) * 1986-04-24 1987-11-02 Matsushita Electric Ind Co Ltd 化合物半導体装置の製造方法
JPH01307278A (ja) * 1988-06-04 1989-12-12 Nippon Mining Co Ltd 太陽電池

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252134A (ja) * 1986-04-24 1987-11-02 Matsushita Electric Ind Co Ltd 化合物半導体装置の製造方法
JPH01307278A (ja) * 1988-06-04 1989-12-12 Nippon Mining Co Ltd 太陽電池

Also Published As

Publication number Publication date
JPS6138849B2 (enrdf_load_stackoverflow) 1986-09-01

Similar Documents

Publication Publication Date Title
JPS55108732A (en) Manufacture of ohmic electrode
JPS5294773A (en) Semiconductor element and its manufacture
JPS5757886A (en) Heat resistant silver coated conductor
JPS525231B2 (enrdf_load_stackoverflow)
JPS5320769A (en) Plasma etching method of metal electrodes
JPS5530834A (en) Method of forming ohmic contact in semiconductor pellet
JPS5579046A (en) Exhaustion gas cleaning catalyst having undergone phosphorus poisoning preventive treatment
JPS5643740A (en) Semiconductor wafer
JPS5521106A (en) Method of forming ohmic electrode
Miranda et al. Thermally induced oxidation of GaAs (110) by a Rb oxide overlayer
JPS5575276A (en) 3[5 group compound semiconductor device
JPS5321570A (en) Bonding method of semiconductor substrates
JPS57115864A (en) Compound semiconductor device
JPS5784166A (en) 3-5 group compound semiconductor device
JPS5723222A (en) Formation of semiconductor element electrode
JPS5228262A (en) Process for assembling semiconductor device
JPS57139944A (en) Forming method for solder bump electrode
JPS5240977A (en) Process for production of semiconductor device
JPS5552227A (en) Semiconductor electrode structure
JPS5244566A (en) Method of alloying semiconductor pellet
JPS527719A (en) Photoresist
JPS54155428A (en) Glass mold type semiconductor device
JPS52117559A (en) Mask formation method
JPS5542049A (en) Hydrogen gas detecting element
Akimov et al. Surface Condition in the Oxidation of Titanium and Its Alloys